Infineon Technologies CY7C1470BV25-200BZC

Overview

CY7C1470BV25-200BZC from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states, 3.0 ns clock-to-output delay, single 2.5V core supply, and 2.5V I/O supply (VDDQ), used in high-throughput memory subsystems of network packet buffers and telecom line cards.

For engineers reviewing the CY7C1470BV25-200BZC datasheet, CY7C1470BV25-200BZC pinout, CY7C1470BV25-200BZC application, or CY7C1470BV25-200BZC equivalent, this device supports back-to-back read/write operations, byte-write control via BWa–BWd, synchronous self-timed writes, JTAG boundary scan, and burst modes (linear/interleaved) - critical for deterministic latency in real-time switching fabric designs.

Technical Context

The CY7C1470BV25-200BZC implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without inter-cycle gaps.

It uses three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for bank selection, asynchronous OE for output tri-state control, and CEN to suspend clock recognition while preserving internal state. Burst addressing is controlled by ADV/LD and MODE strap, supporting linear or interleaved sequences up to four words per burst.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-250BZC, the -200BZC trades 50 MHz speed headroom for identical power draw at target frequency and relaxed timing closure; versus IDT72V2115L10PF, it retains legacy single-data-rate simplicity and 2.5V compatibility but lacks DDR throughput scaling.

Availability

CY7C1470BV25-200BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment, and radar signal processing applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1470BV25-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

The CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in systems demanding deterministic, zero-wait-state memory access for real-time packet and signal processing.

FAQ

What is the function of the MODE pin on CY7C1470BV25-200BZC?

The MODE pin is a static strap input that selects burst order: tied HIGH for interleaved burst, LOW for linear burst. It must remain stable during operation and defaults to HIGH (interleaved) if left floating. This setting determines how the internal burst counter increments address offsets during multi-word accesses.

Can CY7C1470BV25-200BZC operate with only two chip enables asserted?

No. The device requires all three chip enables - CE1 (active-low), CE2 (active-high), and CE3 (active-low) - to be simultaneously asserted at the rising edge of CLK to initiate any access. Partial enable assertion results in deselection and high-impedance outputs, as defined in the functional description and timing diagrams.

How does the "ZZ" sleep mode reduce power consumption?

The ZZ pin, when driven LOW, places the device in deep sleep mode, reducing CMOS standby current to ≤120 mA. Unlike CEN suspension, ZZ disables internal clocks and memory array biasing, cutting dynamic and leakage current. Exit time from ZZ is specified as 100 ns max, enabling rapid wake-up for burst-oriented workloads.

Is the CY7C1470BV25-200BZC compatible with ZBT SRAMs in existing designs?

Yes - it is pin-compatible and functionally equivalent to ZBT SRAMs per Cypress documentation, supporting identical control protocols, timing models, and burst behavior. Migration requires no PCB change and minimal firmware update, primarily to verify ADV/LD and MODE strap configurations match legacy ZBT timing expectations.