Infineon Technologies CY7C1470BV25-200BZCT

Overview

CY7C1470BV25-200BZCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports 2.5V core and I/O supply, delivers 3.0 ns clock-to-output delay, and implements fully registered inputs/outputs for deterministic timing in back-to-back read/write sequences.

For engineers reviewing the CY7C1470BV25-200BZCT datasheet, CY7C1470BV25-200BZCT pinout, CY7C1470BV25-200BZCT application, or CY7C1470BV25-200BZCT equivalent, this device enables true burst-mode memory interfacing in FPGA-ASIC co-processor subsystems where deterministic latency, byte-write granularity, and JTAG-debuggable memory control are required.

Technical Context

The CY7C1470BV25-200BZCT uses a synchronous pipelined architecture with rising-edge-triggered input and output registers, eliminating bus latency via on-chip NoBL™ logic. Its three-level chip enable hierarchy (CE1 active-low, CE2 active-high, CE3 active-low) enables flexible bank selection in multi-SRAM systems without external glue logic.

Burst operation is controlled by the ADV/LD pin and MODE strap: linear or interleaved burst order is selected at power-up and locked during operation. Write operations are self-timed synchronously using WE and four byte-write selects (BWa–BWd), with automatic tri-state control of DQ/DQP pins during write data phases to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant Pb-free construction per JEDEC MO-145.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1470BV25-200BZCT uniquely delivers 72-Mbit density, 200 MHz zero-wait-state operation, and 2.5 V/byte-write capability in a single 100-pin TQFP - making it irreplaceable for high-throughput, low-latency memory subsystems.

Availability

CY7C1470BV25-200BZCT is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, FPGA-based protocol accelerators, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-200BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1470BV25 series belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in bandwidth-constrained, low-latency infrastructure applications where deterministic pipelined access is mandatory.

FAQ

What is the function of the MODE pin, and can it be changed dynamically?

The MODE pin selects burst order: HIGH enables interleaved burst, LOW enables linear burst. It is a static strap pin - must be set at power-up and held stable during operation. Changing MODE mid-operation violates timing and may cause undefined burst address sequencing or data corruption. Floating defaults to HIGH (interleaved).

How does the CY7C1470BV25-200BZCT handle bus contention during write cycles?

During the data portion of a write sequence, DQa–DQd and DQPa–DQPd outputs are automatically forced into high-impedance state regardless of OE status. This hardware-enforced tri-state prevents bus contention without requiring external control logic or precise OE timing alignment.

Is the ZZ Sleep Mode compatible with JTAG boundary scan operation?

Yes - ZZ Sleep Mode places the core memory array and I/O buffers into low-power state while preserving JTAG TAP controller functionality. Boundary scan tests (IDCODE, SAMPLE/PRELOAD, EXTEST) remain fully operational, enabling in-system verification even during sleep intervals.

What is the role of ADV/LD after a device deselect, and why must it be driven LOW?

After deselection (e.g., CE1 deasserted), the internal address counter retains its last value. To load a new starting address for the next access, ADV/LD must be driven LOW before the next valid clock edge. If ADV/LD remains HIGH, the device resumes bursting from the prior address - causing incorrect data fetches or overruns.