Infineon Technologies CY7C1470BV25-200BZXI

Overview

CY7C1470BV25-200BZXI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom ASIC/FPGA interfaces. It operates at 200 MHz with zero wait states, supports 2.5 V core and I/O supply, delivers 3.0 ns clock-to-output delay, and features byte-write capability with four independent BW inputs controlling DQa–DQd and parity lines DQPa–DQPd.

For engineers reviewing the CY7C1470BV25-200BZXI datasheet, CY7C1470BV25-200BZXI pinout, CY7C1470BV25-200BZXI application, or CY7C1470BV25-200BZXI equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), synchronous self-timed write timing, JTAG boundary-scan support, and compatibility with ZBT™-based system designs requiring back-to-back read/write transitions.

Technical Context

The device implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to CLK. Internal self-timed output buffer control eliminates asynchronous OE dependency for output enable timing.

Burst logic supports linear or interleaved addressing per MODE pin setting; write operations use on-chip self-timed circuitry qualified by WE and BWa–BWd, while three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low) enable flexible bank decoding without external glue logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-250BZXI, the -200BZXI offers relaxed timing margins and lower power; versus IS61WV102436BLL-200TQLI, it provides guaranteed ZBT compatibility, MODE-configurable burst order, and production-ready JTAG diagnostics - critical for high-reliability telecom hardware.

Availability

CY7C1470BV25-200BZXI is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line-card memory for telecom routers, and FPGA-based protocol accelerators requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV25-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT™ devices in latency-sensitive, high-bandwidth memory subsystems where back-to-back read/write performance is non-negotiable.

FAQ

What is the function of the MODE pin on CY7C1470BV25-200BZXI?

The MODE pin is a strap input that selects burst address order: pulled HIGH (or left floating) configures interleaved burst mode; pulled LOW selects linear burst mode. It must remain static during operation and is sampled only at power-up or reset. This pin eliminates software configuration overhead and ensures deterministic burst behavior aligned with host controller expectations.

Can CY7C1470BV25-200BZXI operate with only two chip enables asserted?

No. The device requires all three chip enables-CE1 (active-low), CE2 (active-high), and CE3 (active-low)-to be simultaneously asserted at the rising edge of CLK to initiate any access. This triple-enable scheme prevents partial selection and ensures robust bank isolation in multi-SRAM systems, eliminating spurious reads/writes during address transitions.

How does the ZZ Sleep Mode reduce power consumption?

When ZZ is driven LOW, the device enters low-power sleep mode with typical CMOS standby current of 120 mA, independent of clock frequency. Internal clocks and output drivers are gated, but address and data registers retain state. Wake-up occurs synchronously on the next valid CLK edge with CEN asserted, requiring no initialization delay - ideal for burst-idle power cycling in packet-processing pipelines.

Is JTAG boundary scan supported on CY7C1470BV25-200BZXI?

Yes. The device implements full IEEE 1149.1 JTAG compliance with TCK, TMS, TDI, and TDO pins. Boundary-scan testing covers all I/O pins and internal registers, enabling automated PCB test coverage for solder joint integrity and interconnect verification - particularly valuable in high-density telecom line cards where physical probe access is limited.