Infineon Technologies CY7C1470BV25-250AXI
- Part No.:
- CY7C1470BV25-250AXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1470BV25-250AXI.pdf
- Description:
- IC SRAM 72MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,920
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Product details
Overview
CY7C1470BV25-250AXI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 250 MHz with zero wait states, delivers 3.0 ns clock-to-output delay, supports byte-write via four BW inputs, and uses single 2.5 V core and I/O supplies.
For engineers reviewing the CY7C1470BV25-250AXI datasheet, CY7C1470BV25-250AXI pinout, CY7C1470BV25-250AXI application, or CY7C1470BV25-250AXI equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, JTAG boundary-scan support, and TQFP/FBGA package compatibility for PCB layout and thermal management.
Technical Context
The device implements fully registered pipelined operation: all address, control, and data signals are latched on the rising edge of CLK, with CEN qualifying clock recognition. Internal burst logic supports linear or interleaved addressing per MODE pin state, enabling seamless integration into cache-coherent or packet-buffering architectures.
It features synchronous self-timed writes controlled by WE and four byte-write selects (BWa–BWd), eliminating external write-strobe timing constraints. Output drivers are synchronously tri-stated during write data cycles, preventing bus contention without external glue logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 250 MHz - enables back-to-back read/write at full throughput without wait states |
| Access Time (tCO) | 3.0 ns - deterministic clock-to-output delay for timing-critical pipeline stages |
| Supply Voltage | 2.5 V VDD and VDDQ - single-supply operation simplifies power delivery design |
| Burst Capability | Linear or interleaved - selectable via MODE pin for alignment with processor/cache burst patterns |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing of high-density memory interfaces |
| Byte Write Control | Four independent BWa–BWd inputs - allows granular 9-bit writes to DQa–DQd + parity groups |
Pinout & Package
Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. Pin functions are synchronized to CLK rising edge except OE (asynchronous) and MODE (strap).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Synchronous Address Input | Latched on CLK rise; selects one of 2M addresses in 36-bit word space |
| BWa–BWd | Synchronous Byte Write Select | Active-low controls 9-bit write mask per DQ group (DQa/DQPa through DQd/DQPd) |
| CE1, CE3 | Synchronous Chip Enable (Low) | All three CEs must be active at CLK rise to initiate access; enables depth expansion |
| CE2 | Synchronous Chip Enable (High) | Active-high complement to CE1/CE3 for flexible bank decoding |
| ADV/LD | Synchronous Address Advance/Load | LOW loads new address; HIGH advances internal burst counter - critical for sequential access |
| MODE | Strap Input | Static selection of linear vs. interleaved burst order; floating defaults to interleaved |
| DQa–DQd, DQPa–DQPd | Synchronous Bidirectional Data I/O | 36 data + 4 parity bits; direction controlled by OE and internal state; auto-tri-stated during writes |
| CLK, CEN | Clock and Clock Enable | CEN LOW enables CLK sampling; deasserting CEN extends previous cycle without deselection |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) Architecture | Enables unlimited true back-to-back reads/writes with zero wait states - eliminates pipeline stalls in burst-intensive systems |
| Internally Self-Timed Output Buffer Control | Removes need for asynchronous OE timing margining - simplifies timing closure in 250 MHz designs |
| Synchronous Self-Timed Writes | On-chip write sequencing eliminates external write-strobe generation and associated skew management |
| IEEE 1149.1 JTAG Boundary Scan | Supports structural test of memory interface traces and solder joints in high-reliability telecom hardware |
| "ZZ" Sleep Mode and Stop Clock Option | Reduces standby current to ≤120 mA while preserving data - critical for power-constrained line card modules |
Applications
| Telecom Line Card Buffering | Network Processor Packet Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line cards requiring low-latency, high-bandwidth memory access. IC Role / Device Role / Timing Role: Primary burst-access SRAM buffer interfacing directly with network processors via synchronous 36-bit bus. Use Value: 250 MHz zero-wait-state operation sustains 9 Gbps sustained throughput (36 bits × 250 MHz), matching SONET/SDH framing rates. |
Use Scenario: Serving as instruction/data cache for multi-threaded network processors executing deep packet inspection and QoS classification. IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic 3.0 ns tCO for tight loop execution and burst-aligned fetches. Use Value: Fully registered inputs/outputs eliminate setup/hold violations across temperature and voltage corners in 2.5 V systems. |
| Base Station Radio Unit Memory | Industrial Real-Time Controller Buffer |
|
Use Scenario: Holding uplink/downlink symbol buffers in LTE/5G remote radio units where deterministic latency and ECC-capable storage are required. IC Role / Device Role / Timing Role: Parity-enabled SRAM (DQPa–DQPd) supporting error detection in RF signal processing pipelines. Use Value: Byte-write capability (BWa–BWd) enables efficient partial-symbol updates without full-word overwrites. |
Use Scenario: Acting as shared memory between dual-core real-time controllers in programmable logic controllers managing motion control loops. IC Role / Device Role / Timing Role: Synchronous, JTAG-testable SRAM ensuring traceable, field-upgradable firmware and data exchange. Use Value: ZZ sleep mode reduces idle power to <120 mA - extends uptime in fanless, convection-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 36-bit, 2M × 36, 15 ns access, 165-ball FBGA only, 3.3 V supply | Higher voltage, slower speed, no NoBL architecture - requires wait states in 250 MHz systems | Select only if legacy 3.3 V infrastructure exists and throughput < 3.6 Gbps is acceptable |
| ISSI IS61WV204836BLL-15BLI | 36-bit, 2M × 36, 15 ns access, 100-pin TQFP, 3.3 V supply, no JTAG or burst modes | Lacks MODE-selectable burst order, no IEEE 1149.1 support, no self-timed writes | Use only in cost-sensitive, non-burst, non-JTAG applications where 15 ns latency is tolerable |
Compared with IDT72V2115L15PF and IS61WV204836BLL-15BLI, CY7C1470BV25-250AXI uniquely delivers 250 MHz zero-wait-state operation with NoBL™, JTAG testability, and 2.5 V power efficiency - making it the only choice for next-generation telecom and high-speed controller buffering.
Availability
CY7C1470BV25-250AXI is available at Aetrix Electronics and suitable for telecom line cards, network processor subsystems, base station radio units, and industrial real-time controllers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV25-250AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in bandwidth-constrained, low-latency systems such as packet-switching fabric and real-time signal processing.
FAQ
What is the function of the MODE pin on CY7C1470BV25-250AXI?
The MODE pin is a static strap input that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW configures linear burst mode. It must remain stable during operation, as dynamic switching corrupts burst sequences. This setting determines how ADV/LD increments the internal address counter during consecutive accesses.
Does CY7C1470BV25-250AXI support true simultaneous read-write operations?
No - CY7C1470BV25-250AXI is a single-port SRAM and does not support concurrent read and write to different addresses. However, it supports true back-to-back operations: a write completion in one cycle is immediately followed by a read initiation in the next, with zero wait states, enabled by its pipelined NoBL™ architecture and fully registered I/O path.
How does the "ZZ" Sleep Mode reduce power consumption?
In ZZ mode, the device enters a low-power standby state where core logic and output drivers are disabled while retaining memory contents. The maximum CMOS standby current is specified at 120 mA, independent of speed grade. ZZ is activated by driving the ZZ pin LOW while maintaining valid VDD/VDDQ and keeping CEN HIGH to halt clock activity - ideal for intermittent traffic scenarios.
Can CY7C1470BV25-250AXI be used with a 3.3 V controller interface?
No - CY7C1470BV25-250AXI requires 2.5 V ±0.2 V for both VDD (core) and VDDQ (I/O). Interfacing directly with 3.3 V logic violates absolute maximum ratings and risks damage. Level-shifting circuitry (e.g., dual-supply translators like TXS0108E) is mandatory when connecting to 3.3 V controllers, and timing margins must be re-verified per translation path delays.
CY7C1470BV25-250AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1470BV25-250AXI FAQ
1.How can I place an order for CY7C1470BV25-250AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV25-250AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470BV25-250AXI reliable?
The price and inventory of CY7C1470BV25-250AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV25-250AXI is usually 5 days.
3.What payment methods are accepted for CY7C1470BV25-250AXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV25-250AXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1470BV25-250AXI?
CY7C1470BV25-250AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470BV25-250AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470BV25-250AXI?
For technical support, including CY7C1470BV25-250AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV25-250AXI requirements.
6.How does Aetrix verify that CY7C1470BV25-250AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV25-250AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV25-250AXI meets industry standards.
7.What is the process for return or replacement of CY7C1470BV25-250AXI?
All CY7C1470BV25-250AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV25-250AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV25-250AXI part is unused and in its original packaging.
Return procedure for CY7C1470BV25-250AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1470BV25-250AXI Tags

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