Infineon Technologies CY7C1470BV25-250BZXC

Overview

CY7C1470BV25-250BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 250 MHz with zero wait states, delivers 3.0 ns clock-to-output delay, supports byte-write via four BW inputs, and uses single 2.5 V core and I/O supplies.

For engineers reviewing the CY7C1470BV25-250BZXC datasheet, CY7C1470BV25-250BZXC pinout, CY7C1470BV25-250BZXC application, or CY7C1470BV25-250BZXC equivalent, this page provides verified package mapping (100-pin TQFP), burst mode control (linear/interleaved), JTAG boundary scan support, and functional equivalence to ZBT™ SRAMs - all critical for backplane buffer and packet-processing design validation.

Technical Context

This SRAM implements fully registered synchronous interfaces on all inputs and outputs, with clock qualification via CEN and address latching controlled by ADV/LD. Its NoBL™ logic enables true back-to-back read/write operations without bus latency, eliminating pipeline stalls in burst-intensive applications.

The device integrates on-chip self-timed write circuitry, synchronous tri-state control of DQ/DQP lines during write cycles, and IEEE 1149.1-compliant JTAG for boundary scan testing. Burst order (linear or interleaved) is selected statically via the MODE strap pin, and output drivers are synchronously disabled to prevent bus contention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT 72T36115L10PFI and ISSI IS61WV102432BLL-10TLI, CY7C1470BV25-250BZXC uniquely combines 2M × 36 density, 250 MHz operation, TQFP packaging, JTAG, and MODE-configurable burst - making it optimal for upgrade paths from legacy ZBT SRAMs in telecom infrastructure.

Availability

CY7C1470BV25-250BZXC is available at Aetrix Electronics and suitable for packet buffering, network processor interfacing, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for CY7C1470BV25-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in bandwidth-constrained, low-latency systems such as packet switches and base stations.

FAQ

Is CY7C1470BV25-250BZXC pin-compatible with ZBT SRAMs?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to ZBT™ SRAMs per Cypress documentation. The 100-pin TQFP footprint, signal naming (BW, ADV/LD, CEN, CE1–CE3), and timing behavior match industry-standard ZBT devices, enabling drop-in replacement in existing designs without PCB changes.

What is the role of the MODE pin, and can it be changed dynamically?

The MODE pin selects burst order: HIGH enables interleaved burst, LOW enables linear burst. It is a static strap input - must be set before operation begins and held stable during all accesses. Changing MODE mid-operation violates timing and may cause undefined address sequencing or data corruption.

Does CY7C1470BV25-250BZXC support both 2M × 36 and 4M × 18 configurations?

No - CY7C1470BV25 is fixed at 2M × 36 (72 Mbit). The 4M × 18 configuration is implemented in the pin-compatible sibling CY7C1472BV25, which uses fewer byte-write controls (BWa–BWb only) and omits DQPc/DQPd pins. Configuration is hardware-determined by part number, not software or strap settings.

How does the ZZ Sleep Mode reduce power, and what is its exit latency?

ZZ Sleep Mode reduces CMOS standby current to ≤120 mA by gating internal clocks and disabling non-essential circuitry while retaining memory data. Exit latency is one clock cycle after ZZ deassertion - the device resumes normal operation on the next rising CLK edge with no additional setup overhead.