Infineon Technologies CY7C1470BV33-167AXC
- Part No.:
- CY7C1470BV33-167AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1470BV33-167AXC.pdf
- Description:
- IC SRAM 72MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,145
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Product details
Overview
CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.4 ns clock-to-output time. Its fully registered inputs/outputs enable true back-to-back read/write operations in burst or single-access modes.
For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, this device serves as a pin-compatible NoBL SRAM replacement for ZBT™-based systems requiring deterministic latency, byte-write granularity, JTAG boundary scan, and low-power sleep mode (ZZ) in 100-pin TQFP or 165-ball FBGA packages.
Technical Context
The CY7C1470BV33 implements a synchronous, fully registered pipeline where all address, control, and data signals are latched on the rising edge of CLK, with CEN qualifying clock recognition. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without interlock cycles.
Burst operation supports linear or interleaved addressing via ADV/LD, while byte write capability (BWa–BWd) enables selective 9-bit writes to DQa–DQd and parity bits DQPa–DQPd. The device integrates IEEE 1149.1 JTAG boundary scan and offers two power management options: asynchronous ZZ Sleep Mode and synchronous Stop Clock via CEN deassertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization), enabling 72-bit wide data paths for high-bandwidth packet buffering |
| Max Clock Frequency | 167 MHz - supports sustained 167 MT/s throughput with no wait states in pipelined operation |
| Access Time | 3.4 ns - guaranteed clock-to-output delay for timing-critical synchronous read cycles |
| Supply Voltages | 3.3 V core (VDD), 3.3 V or 2.5 V I/O (VDDQ) - allows interoperability with mixed-voltage ASIC/FPGA interfaces |
| Power Consumption | 450 mA max operating current, 120 mA CMOS standby - optimized for line-card thermal budgets |
| Package Options | JEDEC-standard 100-pin TQFP (14 × 20 mm) and 165-ball FBGA (15 × 17 mm), both Pb-free compliant |
Pinout & Package
Available in 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. Both are RoHS-compliant and support industrial temperature range (–40°C to +85°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | Latched on rising CLK edge; selects one of 2M addresses in 2M × 36 configuration |
| BWa–BWd | Synchronous Byte Write Select | Active-low controls 9-bit byte groups: BWa→DQa/DQPa, BWb→DQb/DQPb, etc. |
| CLK, CEN | Clock & Clock Enable | CLK qualified by active-low CEN; deasserting CEN extends previous cycle without deselection |
| CE1, CE2, CE3 | Chip Enable Inputs | Three-level synchronous bank select (CE1/CE3 active-low, CE2 active-high) for multi-SRAM systems |
| OE | Asynchronous Output Enable | Tri-states outputs when HIGH; masked during write data phase to prevent bus contention |
| ADV/LD | Burst Address Control | HIGH advances internal counter; LOW loads new address - enables burst length control |
| ZZ | Asynchronous Sleep Mode | Reduces standby current to <100 µA by disabling internal clocks and drivers when asserted LOW |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited back-to-back reads/writes with zero wait states - eliminates pipeline stalls in packet-forwarding engines |
| Fully Registered I/O | All inputs and outputs synchronized to CLK rising edge - ensures deterministic setup/hold timing across voltage/temperature |
| Byte Write Select (BWa–BWd) | Independent 9-bit write masking per data nibble - avoids read-modify-write cycles in partial updates |
| JTAG Boundary Scan (IEEE 1149.1) | Supports production test and board-level diagnostics without additional test fixtures |
| Flexible Power Management | Two low-power modes: ZZ Sleep (<100 µA) and CEN Stop Clock (retains state, faster wake-up) |
Applications
| Network Packet Buffers | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly with SerDes MAC controllers. Use Value: 167 MHz pipelined throughput and 3.4 ns access time ensure line-rate packet queuing without FIFO bottlenecks. |
Use Scenario: Buffering ATM/SONET cell data in OC-192 line interface units with strict jitter and latency constraints. IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as dual-port FIFO replacement with deterministic read/write timing. Use Value: Fully registered I/O and NoBL™ architecture eliminate metastability risk and guarantee cycle-accurate data handoff. |
| Baseband Processing Memory | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of channelized IQ samples between FPGA-based FFT engines and DSP cores in LTE eNodeB base stations. IC Role / Device Role / Timing Role: Burst-mode SRAM supporting interleaved addressing for parallel FFT stage buffering. Use Value: ADV/LD-controlled linear/interleaved burst modes align with FFT memory access patterns, reducing controller overhead. |
Use Scenario: Real-time buffering of digitized radar return samples before CFAR detection in airborne phased-array systems. IC Role / Device Role / Timing Role: Low-jitter, zero-wait-state memory providing deterministic latency for time-critical pulse processing. Use Value: ZZ Sleep Mode enables rapid power cycling between radar pulses, cutting average power by >90% during idle intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L16PF | 2M × 36, 167 MHz, 3.3 V, but uses QDR-II+ architecture with separate read/write clocks and no ZZ sleep mode | Lacks asynchronous sleep control; requires external clock management for power gating | Prefer when system already uses QDR-II+ timing model and needs higher peak bandwidth via dual-clock operation |
| ISSI IS61WV204836B | 2M × 36, 166 MHz, 3.3 V, but lacks NoBL™ logic, JTAG, ADV/LD, and has 5.5 ns access time | No burst addressing or byte-write registers; requires external handshake logic for pipelining | Choose only for cost-sensitive, non-burst applications where deterministic latency is not required |
Compared with IDT72T36120L16PF and IS61WV204836B, the CY7C1470BV33 uniquely combines NoBL™ zero-latency pipelining, integrated JTAG, and dual low-power modes - making it optimal for latency-constrained, testable, and thermally managed telecom infrastructure designs.
Availability
CY7C1470BV33 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, baseband processing memory, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic-latency, high-throughput memory subsystems in carrier-grade networking and wireless infrastructure equipment.
FAQ
What is the function of the ADV/LD pin in CY7C1470BV33?
The ADV/LD pin controls burst address generation: when HIGH (with CEN active), it advances the internal address counter for sequential burst accesses; when LOW, it loads a new starting address from A[17:0]. This enables flexible burst lengths (1–4, 8, or full-page) without external address sequencing logic, critical for packet header parsing and FFT buffering.
Does CY7C1470BV33 support 2.5 V I/O operation?
Yes - the device supports 2.5 V I/O voltage on VDDQ pins while maintaining 3.3 V core (VDD), allowing direct interfacing with 2.5 V FPGAs or ASICs without level shifters. I/O timing parameters (setup/hold, output delay) are specified separately for 2.5 V and 3.3 V VDDQ conditions in the datasheet AC characteristics table.
How does the ZZ Sleep Mode differ from CEN-based clock stopping?
ZZ is an asynchronous, hardware-driven mode that powers down internal clocks and I/O drivers, reducing current to <100 µA; wake-up requires ~100 ns stabilization. CEN deassertion is synchronous and preserves register state, enabling immediate resumption on next clock edge with no latency penalty - ideal for short idle intervals between bursts.
Can CY7C1470BV33 be used as a drop-in replacement for ZBT SRAMs?
Yes - it is pin-compatible and functionally equivalent to ZBT devices (e.g., IDT72T36120), sharing identical pinout, timing protocol, and control signal behavior. However, CY7C1470BV33 adds NoBL™ latency elimination, ZZ sleep, and JTAG - requiring no design change for migration but enabling enhanced power and test capabilities.
CY7C1470BV33-167AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1470BV33-167AXC FAQ
1.How can I place an order for CY7C1470BV33-167AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV33-167AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1470BV33-167AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-167AXC is usually 5 days.
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6.How does Aetrix verify that CY7C1470BV33-167AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV33-167AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-167AXC meets industry standards.
7.What is the process for return or replacement of CY7C1470BV33-167AXC?
All CY7C1470BV33-167AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-167AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV33-167AXC part is unused and in its original packaging.
Return procedure for CY7C1470BV33-167AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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