Infineon Technologies CY7C1470BV33-167BZCT

Overview

CY7C1470BV33-167BZCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It operates at 167 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.4 ns clock-to-output access time. Its fully registered inputs/outputs enable true back-to-back read/write operations in packet switching and protocol acceleration systems.

For engineers reviewing the CY7C1470BV33-167BZCT datasheet, CY7C1470BV33-167BZCT pinout, CY7C1470BV33-167BZCT application, or CY7C1470BV33-167BZCT equivalent, this device serves as a pin-compatible NoBL™ alternative to ZBT™ SRAMs in burst-mode memory subsystems requiring deterministic latency and byte-selectable writes.

Technical Context

The CY7C1470BV33-167BZCT implements a synchronous, fully registered pipeline where all address, control, and data signals are latched on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers without inter-cycle gaps.

It features four independent byte write enables (BWa–BWd), synchronous self-timed writes, and dual-mode burst addressing (linear or interleaved). The device integrates IEEE 1149.1 JTAG boundary scan and supports ZZ Sleep Mode for low-power standby with asynchronous wake-up via CE or CLK.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV204836BLL-167TQLI, the CY7C1470BV33-167BZCT uniquely delivers zero-wait-state burst chaining and integrated sleep control - essential for latency-sensitive, power-aware telecom infrastructure designs.

Availability

CY7C1470BV33-167BZCT is available at Aetrix Electronics and suitable for packet buffering in Ethernet switches, cell-based ATM line cards, protocol acceleration engines, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV33-167BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1470BV33 series belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in networking and telecom infrastructure where latency predictability and burst efficiency are critical.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33-167BZCT?

The ADV/LD pin controls the internal address counter: when HIGH (with CEN active), it advances the burst address; when LOW, it loads a new starting address from A0–A17. This dual-mode operation supports both sequential burst access and random address loading without external address generation logic.

Does CY7C1470BV33-167BZCT support 2.5 V I/O operation?

Yes - the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interface to 2.5 V FPGA or ASIC I/O banks. The device maintains full 167 MHz operation and 3.4 ns access time at 2.5 V I/O, with separate 3.3 V VDD for core logic.

How does the ZZ Sleep Mode reduce power consumption?

In ZZ mode, the device enters deep standby with core logic halted and I/O drivers disabled, drawing ≤120 µA typical. Wake-up occurs asynchronously on any CE transition or CLK edge - no clock restart delay - making it ideal for bursty traffic with long idle periods.

Can CY7C1470BV33-167BZCT be used in place of ZBT™ SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT™ devices (e.g., IDT72V2115), but adds NoBL™ zero-latency burst chaining and ZZ Sleep Mode. No hardware or timing changes are needed for drop-in replacement in existing ZBT™ designs.