Infineon Technologies CY7C1470BV33-167BZI

Overview

CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.4 ns clock-to-output time.

For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, byte write capability across four 9-bit data groups, and IEEE 1149.1 JTAG boundary scan compliance for system-level testability.

Technical Context

This SRAM implements fully registered synchronous operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write transitions without wait states.

It features three synchronous chip enables (CE1 low-active, CE2 high-active, CE3 low-active) for flexible bank decoding, an asynchronous OE for output tri-state control during write cycles, and Clock Enable (CEN) to suspend clock recognition without deselecting the device. Burst addressing is controlled via ADV/LD, supporting both linear and interleaved sequences.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and Pb-free/non-Pb-free 165-ball FBGA (15 × 17 × 1.4 mm) packages. Pin functions validated per Cypress Document 001-15031 Rev. *O.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L16PF and IS61WV204836BLL-167TQLI, CY7C1470BV33 uniquely combines JTAG testability, ZZ sleep mode, and programmable burst order-critical for telecom infrastructure where field-upgradable reliability and power-aware operation are mandatory.

Availability

CY7C1470BV33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial protocol gateway applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems.

CY7C1470BV33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput buffering in deterministic communication infrastructure where back-to-back read/write performance is non-negotiable.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33?

The ADV/LD pin controls burst address generation: when HIGH (with CEN active), it advances the internal burst counter; when LOW, it loads a new starting address from A[17:0]. This dual-mode operation enables seamless transition between sequential burst access and random-address initiation without external address sequencing logic.

Does CY7C1470BV33 support 2.5 V I/O operation?

Yes - the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interface with 2.5 V logic families while maintaining full 167 MHz operation. Core VDD remains fixed at 3.3 V ±0.3 V. I/O voltage selection is hardware-configured via VDDQ pin voltage, not register-programmable.

How does the ZZ Sleep Mode reduce power consumption?

When ZZ is asserted LOW, the device enters low-power sleep mode with standby current reduced to ≤120 mA (same as CMOS standby spec). Unlike standard standby, ZZ preserves all memory contents and retains internal state, allowing immediate resumption of operation upon deassertion without initialization delay or data loss.

Can CY7C1470BV33 be used in place of ZBT™ SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT devices, supporting identical control protocols, timing models, and burst behaviors. Migration requires no PCB redesign or firmware changes, but designers must verify compatibility of ADV/LD timing and OE masking behavior against legacy ZBT implementations.