Infineon Technologies CY7C1470BV33-167BZIT

Overview

CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It supports 167 MHz bus operation with zero wait states, features fully registered I/O, 3.3 V core supply with 3.3 V/2.5 V I/O compatibility, and synchronous self-timed writes.

For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include its 100-pin TQFP package, byte-write capability across four 9-bit data groups (DQa–DQd + DQPa–DQPd), ZZ sleep mode, JTAG boundary scan support, and compatibility with ZBT™-based system designs requiring back-to-back burst throughput.

Technical Context

The device implements a fully synchronous, clocked interface where all inputs-including address, control, and byte-write signals-are registered on the rising edge of CLK, and all outputs are registered to eliminate output skew. Its NoBL™ logic enables true back-to-back read/write operations without bus latency, using internal burst counters and pipelined address steering.

It integrates three synchronous chip enables (CE1 low, CE2 high, CE3 low) for flexible bank decoding, an asynchronous OE for output tri-state control during write cycles, and a dedicated CEN pin to suspend clock recognition without deselecting the device-preserving internal state across clock gating events.

Key Specifications

Pinout & Package

The CY7C1470BV33 is packaged in a JEDEC-standard Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, with 0.5 mm pitch and exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV33-200BZIT, the -167BZIT offers relaxed timing margins and lower power at 450 mA operating current; versus AS7C3256B-167JCIN, it delivers superior burst throughput, full 36-bit width, and system-level debug/test capability via JTAG-making it uniquely suited for telecom and NPU memory subsystems.

Availability

CY7C1470BV33-167BZIT is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processor caching, and industrial real-time controller buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV33-167BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in high-speed networking and signal processing equipment where deterministic timing and back-to-back throughput are critical.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33-167BZIT?

The ADV/LD pin controls burst address generation: when HIGH and CEN is active, it advances the internal burst counter for sequential accesses; when LOW, it loads a new starting address from A0–A17. This dual-mode operation enables both linear and interleaved burst sequences without external address sequencing logic, directly supporting cache-line and packet-buffer access patterns.

Does CY7C1470BV33-167BZIT support 2.5 V I/O voltage while operating on 3.3 V core supply?

Yes - the device features separate VDDQ (I/O) and VDD (core) supplies. VDDQ accepts 2.5 V ± 0.2 V while VDD remains at 3.3 V ± 0.3 V, allowing direct connection to 2.5 V FPGAs or ASICs without level shifters. This dual-voltage I/O capability is explicitly specified in the DC characteristics table and supported across all speed grades including the 167 MHz variant.

How does the ZZ (Sleep) mode affect data retention and wake-up timing?

In ZZ mode (pin driven LOW), the device enters deep standby with CMOS standby current ≤120 mA while retaining all stored data. Wake-up is synchronous: the first valid CLK edge after ZZ returns HIGH initiates internal recovery, and normal access resumes on the subsequent clock cycle - no additional stabilization delay or initialization sequence is required, ensuring deterministic resumption of burst operations.

Is JTAG boundary scan functionality enabled by default on CY7C1470BV33-167BZIT?

JTAG is implemented per IEEE 1149.1 and enabled by default; no configuration fuse or strap is needed. The TAP controller responds to standard JTAG instructions (SAMPLE/PRELOAD, EXTEST, IDCODE) using dedicated pins (TCK, TMS, TDI, TDO). Boundary scan testing can be performed immediately after power-up, provided the TAP reset sequence (TMS=HIGH for five TCK cycles) is executed first.