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Infineon Technologies CY7C1470BV33-200AXI

Part No.:
CY7C1470BV33-200AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1470BV33-200AXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,425

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Product details

Overview

CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.0 ns clock-to-output time. Its fully registered inputs/outputs enable true back-to-back read/write operations in burst or single-access modes.

For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include its 100-pin TQFP package, byte-write capability across four 9-bit data groups (DQa–DQd + DQPa–DQPd), synchronous self-timed write control, and JTAG boundary-scan compliance for system-level testability.

Technical Context

The CY7C1470BV33 implements a No Bus Latency™ architecture with fully synchronous, rising-edge-triggered registers on all address, control, and data paths. Its internal burst logic supports linear or interleaved addressing, and the ADV/LD pin controls either counter advancement or new address loading - critical for sequential packet buffering.

Three chip enables (CE1 low, CE2 high, CE3 low) provide hierarchical bank selection, while OE remains asynchronous to tri-state outputs during write cycles and deselected states. The CEN pin suspends clock recognition without deselecting the device, enabling precise cycle extension for timing-critical bus arbitration.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling 9-byte aligned data transfers per access
Max Clock Frequency 200 MHz - supports sustained 200 MT/s throughput with no wait states
Access Time 3.0 ns - defines minimum clock-to-output delay for timing-critical read pipelines
Supply Voltage 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - allows interoperability with both LVTTL and SSTL-2 interfaces
Byte Write Control Four independent BWa–BWd signals - enables selective 9-bit writes without read-modify-write overhead
Power Consumption 500 mA max operating current, 120 mA CMOS standby - suitable for thermally constrained line-card designs
JTAG Support IEEE 1149.1 compliant - provides boundary-scan test coverage for PCB interconnect validation

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input Sampled on rising CLK edge; selects one of 2M addresses in 36-bit word space
BWa–BWd Synchronous Byte Write Select Active-low per 9-bit data group (DQa/DQPa through DQd/DQPd); qualified by WE
CE1, CE3 Synchronous Chip Enable (Low) Combined with CE2 (high) to assert full device selection on rising CLK edge
CE2 Synchronous Chip Enable (High) Inverts logic polarity vs CE1/CE3 - enables flexible multi-chip decode schemes
CLK, CEN Clock Input / Clock Enable CEN masks CLK without deselecting; preserves internal state during gated-clock operation
OE Asynchronous Output Enable Tri-states outputs during write data phase and deselected states to prevent bus contention
ADV/LD Advance/Load Control HIGH advances internal burst counter; LOW loads new address - essential for burst-mode flexibility
DQa–DQd, DQPa–DQPd Bidirectional Data I/O (36-bit) Grouped into four 9-bit bytes with dedicated parity pins (DQPa–DQPd) for ECC-capable systems

Key Features

Feature Design Value
NoBL™ Architecture Enables unlimited back-to-back reads/writes with zero latency between consecutive operations
Self-Timed Writes On-chip circuitry eliminates external write pulse timing constraints - simplifies controller design
Byte-Write Granularity Four independent 9-bit write enables allow partial-word updates without data corruption risk
Sleep Mode (ZZ) Reduces standby current to <120 mA while retaining data - ideal for power-gated subsystems
Burst Addressing Configurable linear or interleaved order via MODE pin - matches DSP and packet processor expectations

Applications

Telecom Line Cards Network Packet Buffers

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly to MAC controllers and switch fabric ASICs.

Use Value: 200 MHz zero-wait-state operation ensures deterministic frame queuing with sub-5 ns read turnaround - critical for cut-through switching.

Use Scenario: Temporary storage of fragmented IP packets during reassembly in firewall or DPI appliances.

IC Role / Device Role / Timing Role: Burst-capable SRAM serving as first-level packet buffer between ingress parser and classification engine.

Use Value: Linear burst mode with ADV/LD control enables efficient sequential packet streaming, reducing bus arbitration overhead by >40% vs asynchronous SRAM.

Baseband Processing Units Radar Signal Processing

Use Scenario: Real-time buffering of OFDM symbol data between FFT engines and channel estimation blocks in 4G/5G baseband ICs.

IC Role / Device Role / Timing Role: Synchronous pipeline memory synchronizing multi-stage digital signal processing pipelines.

Use Value: Fully registered I/O eliminates setup/hold violations at 200 MHz, enabling direct connection to FPGA-based DSP cores without external timing compensation.

Use Scenario: Storing intermediate chirp samples and correlation results in pulsed-Doppler radar front-ends.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical signal chain buffering.

Use Value: 3.0 ns clock-to-output and synchronous self-timed writes guarantee consistent sample-to-result latency - essential for phase-coherent beamforming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 256-K × 36, 10 ns access, 165-ball FBGA only - lower density, slower speed Limited to mid-bandwidth control-plane buffers; lacks burst flexibility and ZZ sleep mode Choose when board space permits larger FBGA and system clock ≤100 MHz
ISSI IS61WV102436B 1M × 36, 167 MHz max, 100-pin TQFP - same footprint but 33% lower bandwidth Suitable for cost-sensitive legacy designs; no JTAG, no ADV/LD, no interleaved burst Select only if 200 MHz throughput and IEEE 1149.1 testability are not required

Compared with IDT72V2115L10PF and IS61WV102436B, the CY7C1470BV33 delivers 2× higher bandwidth in identical TQFP packaging, adds JTAG testability and flexible burst control, and maintains full pin compatibility with ZBT-family controllers - making it the only option supporting next-generation packet-processing latency targets.

Availability

CY7C1470BV33 is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and radar signal processing systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched and real-time signal processing systems where bus latency directly impacts system-level throughput.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33?

The ADV/LD pin controls the internal address counter behavior: when HIGH (with CEN active), it advances the burst counter for sequential accesses; when LOW, it loads a new address from A0–A17. This dual-mode operation enables both burst streaming and random-access flexibility within a single memory interface, eliminating the need for external address generation logic in packet buffer applications.

Does CY7C1470BV33 support 2.5 V I/O signaling?

Yes - the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interfacing with 2.5 V logic families such as SSTL-2 without level shifters. The device maintains full 200 MHz operation and timing specifications under 2.5 V I/O conditions, as verified in the AC switching characteristics table of the official datasheet (Document 001-15031 Rev. *O).

How does the ZZ Sleep Mode reduce power consumption?

When the ZZ pin is driven LOW, the CY7C1470BV33 enters a low-power retention state drawing ≤120 mA standby current while preserving all stored data. Unlike standard standby, ZZ mode disables internal clocks and output drivers more aggressively - critical for power-gated subsystems in carrier-grade equipment where thermal envelope and energy efficiency are tightly constrained.

Is CY7C1470BV33 pin-compatible with ZBT SRAMs?

Yes - the CY7C1470BV33 is explicitly designed as pin-compatible and functionally equivalent to ZBT™ SRAMs, including identical pin assignments for address, data, control, and power terminals. This allows drop-in replacement in existing ZBT-based designs while delivering improved performance via NoBL™ architecture and enhanced features like JTAG and ZZ sleep mode.

CY7C1470BV33-200AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1470BV33-200AXI FAQ

1.How can I place an order for CY7C1470BV33-200AXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV33-200AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV33-200AXI reliable?

The price and inventory of CY7C1470BV33-200AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-200AXI is usually 5 days.

3.What payment methods are accepted for CY7C1470BV33-200AXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV33-200AXI transactions.

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CY7C1470BV33-200AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV33-200AXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV33-200AXI?

For technical support, including CY7C1470BV33-200AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-200AXI requirements.

6.How does Aetrix verify that CY7C1470BV33-200AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV33-200AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-200AXI meets industry standards.

7.What is the process for return or replacement of CY7C1470BV33-200AXI?

All CY7C1470BV33-200AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-200AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV33-200AXI part is unused and in its original packaging.

Return procedure for CY7C1470BV33-200AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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