Infineon Technologies CY7C1470BV33-200BZC
- Part No.:
- CY7C1470BV33-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470BV33-200BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,370
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Product details
Overview
CY7C1470BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.0 ns clock-to-output time.
For engineers reviewing the CY7C1470BV33 datasheet, CY7C1470BV33 pinout, CY7C1470BV33 application, or CY7C1470BV33 equivalent, key selection criteria include burst read/write capability, byte-write select granularity (BWa–BWd), synchronous self-timed write control, and JEDEC-standard 100-pin TQFP packaging for board-level timing integrity.
Technical Context
The CY7C1470BV33 implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to the same edge. Its NoBL™ logic eliminates bus latency by enabling back-to-back read/write operations without wait states.
It supports linear or interleaved burst orders, includes three synchronous chip enables (CE1 low, CE2 high, CE3 low) for bank selection, and uses internal self-timed output buffer control-removing dependency on asynchronous OE for output tri-state management during writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 200 MHz - enables sustained 200 MT/s throughput with no wait states |
| Access Time | 3.0 ns - defines minimum clock-to-valid-data delay for timing closure |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing |
| Byte Write Control | BWa–BWd pins - enable independent 9-bit byte write masking for partial-word updates |
| Power Consumption | 500 mA max operating current - constrains thermal design and power delivery for continuous burst operation |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm) - JEDEC-standard footprint with defined thermal resistance (θJA = 36 °C/W) |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free compliant, JEDEC standard MO-220.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Synchronous Address Input | Latched on rising CLK edge; selects one of 2M addresses in 36-bit word space |
| BWa–BWd | Synchronous Byte Write Select | Active-low controls write enable for four 9-bit DQ groups (DQa/DQPa through DQd/DQPd) |
| CLK | Primary Synchronous Clock | Qualified by CEN; all register transfers occur on rising edge |
| CEN | Clock Enable | Active-low; suspends clock recognition without deselecting device, extending previous cycle |
| CE1, CE2, CE3 | Synchronous Chip Enables | Three-input decode (CE1=L, CE2=H, CE3=L) activates device; enables multi-bank memory systems |
| OE | Asynchronous Output Enable | Active-low; tri-states outputs during write data phase to prevent bus contention |
| DQa–DQd, DQPa–DQPd | Bidirectional Data I/O | 36-bit data bus + 4 parity bits; direction controlled by OE and internal write/read state machine |
| ADV/LD | Address Counter Control | HIGH advances internal burst counter; LOW loads new address from A[17:0] after deselection |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited consecutive read/write cycles with zero wait states - critical for packet buffering in wire-speed switches |
| Fully Registered Interface | All inputs and outputs synchronized to CLK rising edge - simplifies PCB layout and timing analysis in high-speed designs |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - improves reliability across voltage/temperature |
| IEEE 1149.1 JTAG Boundary Scan | Supports production test and debug of SRAM interconnects without additional test fixtures |
| ZZ Sleep Mode | Reduces standby current to ≤120 mA while preserving data - extends hold time in low-power system suspend states |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/3 switches with deterministic latency. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC and switch fabric controllers. Use Value: 200 MHz zero-wait-state operation ensures full-line-rate buffering for 10 Gbps+ interfaces without pipeline stalls. |
Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers requiring burst-mode memory access. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing aligned 36-bit word storage for ATM cell and GFP frame handling. Use Value: Linear/interleaved burst capability matches telecom protocol alignment requirements, reducing controller overhead. |
| Baseband Processing Cache | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Pipelined SRAM acting as low-latency scratchpad memory for real-time DSP pipelines. Use Value: Fully registered interface ensures setup/hold margin at 200 MHz, supporting tight timing budgets in FPGA-based signal chains. |
Use Scenario: Capturing and buffering high-resolution chirp samples in phased-array radar front-ends before FFT processing. IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode used in temperature-variable airborne radar modules. Use Value: 120 mA max CMOS standby current enables extended idle periods without data loss or thermal drift impact. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 2M × 36, 10 ns access, 100 MHz max - slower speed grade, different burst control logic | Targeted at legacy telecom systems with relaxed timing margins | Select when 100 MHz throughput suffices and JTAG boundary scan is not required |
| ISSI IS61WV204836BLL-200TQLI | 2M × 36, 200 MHz, but lacks NoBL™ architecture - requires wait states for back-to-back accesses | Suitable for cost-sensitive industrial controllers where burst continuity is non-critical | Choose only if system controller handles wait-state insertion and byte-write granularity is less critical |
Compared with IDT72V2115L10PF and IS61WV204836BLL-200TQLI, the CY7C1470BV33 uniquely delivers true zero-wait-state pipelining at 200 MHz with integrated burst logic and IEEE 1149.1 test support - essential for next-generation packet-processing hardware requiring deterministic latency and production testability.
Availability
CY7C1470BV33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1470BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications infrastructure.
The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in networking, telecom, and radar signal processing equipment.
FAQ
What is the function of the ADV/LD pin in CY7C1470BV33?
The ADV/LD pin controls the internal address counter: when HIGH and CEN is active, it advances the burst address counter; when LOW, it loads a new starting address from A[17:0]. After device deselection, ADV/LD must be driven LOW to accept a new address - ensuring deterministic burst initialization in multi-cycle memory transactions.
Does CY7C1470BV33 support both linear and interleaved burst modes?
Yes - burst order is selected via the MODE pin: MODE = LOW configures linear burst (sequential increment), MODE = HIGH selects interleaved burst (bit-swapped addressing). This dual-mode capability allows compatibility with both PowerPC and x86-based memory controllers without external address translation logic.
How does the ZZ Sleep Mode affect data retention and power draw?
In ZZ mode, the CY7C1470BV33 reduces CMOS standby current to ≤120 mA while maintaining full data retention across the industrial temperature range (–40°C to +85°C). The device exits ZZ mode synchronously on the next valid CLK edge after ZZ is deasserted, with no additional latency beyond standard access timing.
Can CY7C1470BV33 operate with 2.5 V I/O while using 3.3 V core supply?
Yes - VDDQ (I/O supply) accepts 2.5 V ±0.2 V independently of VDD (3.3 V ±0.3 V), allowing direct interfacing with 2.5 V FPGAs or ASICs. I/O voltage level is internally detected; no external configuration is needed, and AC timing parameters remain valid per datasheet specifications at 2.5 V VDDQ.
CY7C1470BV33-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470BV33-200BZC FAQ
1.How can I place an order for CY7C1470BV33-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470BV33-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470BV33-200BZC reliable?
The price and inventory of CY7C1470BV33-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-200BZC is usually 5 days.
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Once your CY7C1470BV33-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470BV33-200BZC?
For technical support, including CY7C1470BV33-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-200BZC requirements.
6.How does Aetrix verify that CY7C1470BV33-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1470BV33-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1470BV33-200BZC?
All CY7C1470BV33-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470BV33-200BZC part is unused and in its original packaging.
Return procedure for CY7C1470BV33-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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