Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1470BV33-200BZIT

Part No.:
CY7C1470BV33-200BZIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1470BV33-200BZIT.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,273

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1470BV33-200BZIT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.0 ns clock-to-output time.

For engineers reviewing the CY7C1470BV33-200BZIT datasheet, CY7C1470BV33-200BZIT pinout, CY7C1470BV33-200BZIT application, or CY7C1470BV33-200BZIT equivalent, this device enables true back-to-back read/write operations without bus latency, supports byte-write control via BWa–BWd, and integrates JTAG boundary scan for production testability.

Technical Context

The CY7C1470BV33-200BZIT implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Its NoBL™ logic eliminates bus turnaround delay by enabling consecutive read or write cycles with data valid on every clock edge.

It features three synchronous chip enables (CE1 low, CE2 high, CE3 low), asynchronous OE for output tri-state control, and CEN to suspend clock recognition without deselecting the device. Burst capability supports both linear and interleaved orders, and ZZ sleep mode reduces standby current to 120 mA.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling single-chip replacement for legacy ZBT SRAMs in 36-bit data-path systems.
Max Clock Frequency 200 MHz - supports sustained 200 MT/s throughput with no wait states in pipelined operation.
Access Time 3.0 ns - defines minimum clock-to-output delay for timing-critical burst reads in telecom control planes.
Supply Voltages 3.3 V core (VDD), 3.3 V or 2.5 V I/O (VDDQ) - allows interoperability with mixed-voltage ASIC/FPGA interfaces.
Byte Write Control BWa–BWd pins (active-low) - enable independent 9-bit byte writes to DQa/DQPa through DQd/DQPd, preserving data integrity during partial updates.
Power Consumption 500 mA max operating current, 120 mA CMOS standby - meets thermal constraints in dense line-card PCB layouts.
JTAG Support IEEE 1149.1 compliant - provides boundary-scan test access for automated optical inspection and in-circuit validation.

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant Pb-free, JEDEC-standard footprint.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Synchronous Address Input Latched on rising CLK edge; selects one of 2M addresses in 2M × 36 configuration.
BWa–BWd Synchronous Byte Write Select Active-low controls 9-bit byte lanes: BWa→DQa/DQPa, BWb→DQb/DQPb, etc., enabling granular write masking.
CE1, CE2, CE3 Synchronous Chip Enable Three-input decode (CE1=L, CE2=H, CE3=L) enables bank selection in multi-SRAM systems without external logic.
CLK, CEN Clock & Clock Enable CLK qualified by active-low CEN; deasserting CEN extends previous cycle without disrupting internal state.
OE Asynchronous Output Enable Tri-states DQs when HIGH; masked during write data phase to prevent bus contention.
ZZ Deep Sleep Control Active-low entry into low-power mode; reduces I/O leakage and core bias current while retaining memory content.

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables unlimited back-to-back read/write operations with zero wait states - eliminates pipeline bubbles in burst-intensive traffic buffers.
Fully Registered I/O All inputs and outputs synchronized to CLK rising edge - simplifies timing closure in high-speed FPGA-attached designs.
Synchronous Self-Timed Writes On-chip write timing control eliminates external write-strobe generation and guarantees data setup/hold compliance.
Burst Mode Flexibility Configurable linear or interleaved burst order - matches legacy ZBT controller addressing schemes without firmware changes.
3.3 V Core / Dual-VDDQ Supports 3.3 V or 2.5 V I/O voltage - allows direct interface to both older 3.3 V FPGAs and newer low-voltage SerDes PHYs.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer between ingress parser and egress scheduler engines.

Use Value: 200 MHz pipelined throughput and 3.0 ns clock-to-output ensure frame metadata remains aligned across multiple clock domains.

Use Scenario: Holding ATM cell headers and payload fragments in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: Synchronous burst memory for header lookup tables and payload reassembly buffers.

Use Value: Byte-write capability (BWs) enables atomic update of per-cell status flags without disturbing adjacent payload bytes.

Baseband Processing Cache Radar Signal Processing FIFO

Use Scenario: Temporary storage of decoded channel symbols in 4G/LTE baseband ASICs before turbo decoding.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for symbol interleaving/deinterleaving pipelines.

Use Value: Fully registered interface eliminates clock-domain crossing logic, reducing RTL complexity and timing risk.

Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends prior to FFT computation.

IC Role / Device Role / Timing Role: High-reliability, jitter-immune memory FIFO synchronized to system sampling clock.

Use Value: ZZ sleep mode cuts standby power during idle beam-scan intervals while preserving sample integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 2M × 36, 10 ns access, 100 MHz max frequency - slower clock rate and higher latency than CY7C1470BV33-200BZIT. Targeted at cost-sensitive industrial controllers where 200 MHz throughput is unnecessary. Select when system clock is ≤100 MHz and JTAG test is not required.
ISSI IS61WV204836BLL-100TQLI 2M × 36, 100 MHz, no NoBL™ architecture - requires wait states between read/write transitions. Suitable for non-burst, register-file-style access patterns in embedded microcontrollers. Choose only if design lacks burst-addressing logic and tolerates pipeline stalls.

Compared with IDT72V2115L10PF and IS61WV204836BLL-100TQLI, the CY7C1470BV33-200BZIT delivers 2× higher bandwidth, eliminates bus turnaround overhead, and includes integrated JTAG - making it optimal for telecom and networking systems requiring deterministic, high-frequency memory access.

Availability

CY7C1470BV33-200BZIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1470BV33-200BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.

The CY7C1470BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in carrier-grade networking and wireless infrastructure equipment.

FAQ

What is the function of the ADV/LD pin in CY7C1470BV33-200BZIT?

The ADV/LD pin controls the internal burst address counter: when HIGH and CEN is active, it advances the counter for sequential burst accesses; when LOW, it loads a new starting address from A[17:0]. This dual-mode operation enables both continuous streaming and random-access burst initiation without external address generation logic.

Does CY7C1470BV33-200BZIT support 2.5 V I/O operation?

Yes - the device supports 2.5 V I/O voltage on VDDQ pins while maintaining 3.3 V core (VDD) operation. This allows direct interfacing with 2.5 V FPGA I/O banks or ASIC SerDes receivers without level-shifting circuitry, provided VDDQ is externally supplied at 2.5 V ±0.1 V.

How does the ZZ (Sleep) mode affect data retention?

In ZZ mode, the device enters deep sleep with reduced current draw (120 mA typical), but retains full memory content without external refresh. All internal registers and array state remain intact; exit from ZZ mode requires two clock cycles before valid data is available on DQs.

Is CY7C1470BV33-200BZIT pin-compatible with ZBT SRAMs?

Yes - it is pin-compatible and functionally equivalent to ZBT™ SRAMs such as IDT72V2115, sharing identical pinout, timing behavior, and control signal definitions (CE1/CE2/CE3, BWx, ADV/LD). This enables drop-in replacement in existing ZBT-based designs without PCB or firmware changes.

CY7C1470BV33-200BZIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1470BV33-200BZIT FAQ

1.How can I place an order for CY7C1470BV33-200BZIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV33-200BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV33-200BZIT reliable?

The price and inventory of CY7C1470BV33-200BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV33-200BZIT is usually 5 days.

3.What payment methods are accepted for CY7C1470BV33-200BZIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV33-200BZIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470BV33-200BZIT?

CY7C1470BV33-200BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV33-200BZIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV33-200BZIT?

For technical support, including CY7C1470BV33-200BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV33-200BZIT requirements.

6.How does Aetrix verify that CY7C1470BV33-200BZIT is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV33-200BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV33-200BZIT meets industry standards.

7.What is the process for return or replacement of CY7C1470BV33-200BZIT?

All CY7C1470BV33-200BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV33-200BZIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV33-200BZIT part is unused and in its original packaging.

Return procedure for CY7C1470BV33-200BZIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1470BV33-200BZIT Tags

  • CY7C1470BV33-200BZIT
  • CY7C1470BV33-200BZIT PDF
  • CY7C1470BV33-200BZIT Datasheet
  • CY7C1470BV33-200BZIT Specifications
  • CY7C1470BV33-200BZIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1470BV33-200BZIT
  • Buy CY7C1470BV33-200BZIT
  • CY7C1470BV33-200BZIT Price
  • CY7C1470BV33-200BZIT Distributor
  • CY7C1470BV33-200BZIT Supplier
  • CY7C1470BV33-200BZIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER