Infineon Technologies CY7C1470BV33-200BZXI

Overview

CY7C1470BV33-200BZXI from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 3.3 V/2.5 V I/O, and delivers 3.0 ns clock-to-output time.

For engineers reviewing the CY7C1470BV33-200BZXI datasheet, CY7C1470BV33-200BZXI pinout, CY7C1470BV33-200BZXI application, or CY7C1470BV33-200BZXI equivalent, this device enables true back-to-back read/write operations without bus latency-critical for burst-intensive data path architectures requiring deterministic timing and byte-level write granularity.

Technical Context

The CY7C1470BV33-200BZXI implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Its NoBL™ logic eliminates bus turnaround overhead by enabling consecutive reads or writes on every clock cycle.

It features four independent byte write enables (BWa–BWd), synchronous self-timed writes, three chip enables (CE1, CE2, CE3) for flexible bank selection, and an asynchronous OE for output tri-state control during write sequences. The device supports linear and interleaved burst modes and includes IEEE 1149.1 JTAG boundary scan.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (JEDEC-standard Pb-free, 14 mm × 20 mm × 1.4 mm body height).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV33-250BZXI, the -200BZXI trades 50 MHz bandwidth for lower power and relaxed timing closure; versus AS7C3256B-20JCN, it provides 36× higher bandwidth and deterministic pipelined behavior essential for data-path applications.

Availability

CY7C1470BV33-200BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470BV33-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

This device belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in high-speed digital signal processing and packet-switching infrastructure.

FAQ

What is the function of the ADV/LD pin in burst operations?

The ADV/LD pin controls the internal address counter during burst accesses: when HIGH and CEN is active, it increments the counter for sequential addressing; when LOW, it loads a new base address from A[17:0]. This dual-mode operation enables both continuous streaming and random-start burst transfers without external address generation logic.

Does CY7C1470BV33-200BZXI support 2.5 V I/O signaling?

Yes-the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interface with 2.5 V logic families. The device maintains full 200 MHz operation and specified timing margins at 2.5 V I/O, with separate VDD (3.3 V) powering core logic to ensure noise isolation between analog-sensitive memory arrays and digital I/O.

How does the ZZ pin reduce power consumption?

The ZZ pin places the device in deep sleep mode, disabling internal clocks and memory array biasing while retaining data. This reduces supply current from 500 mA (active) to 120 mA (CMOS standby), making it suitable for power-gated subsystems where memory state must persist during idle intervals without full power-down sequencing.

Can CY7C1470BV33-200BZXI be used as a drop-in replacement for ZBT SRAMs?

Yes-it is pin-compatible and functionally equivalent to ZBT devices, supporting identical control protocols, burst orders, and timing models. However, its NoBL™ architecture delivers superior throughput in back-to-back scenarios due to eliminated bus turnaround cycles, requiring no changes to existing ZBT firmware or controller logic.