Infineon Technologies CY7C1470V25-167BZXI
- Part No.:
- CY7C1470V25-167BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470V25-167BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,500
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Product details
Overview
CY7C1470V25-167BZXI from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 167 MHz with zero wait states. It features fully registered I/O, 2.5 V core and I/O supplies, byte write capability, and JEDEC-standard Pb-free 100-pin TQFP packaging. Used in high-throughput networking line cards for packet buffering with deterministic latency.
For engineers reviewing the CY7C1470V25-167BZXI datasheet, CY7C1470V25-167BZXI pinout, CY7C1470V25-167BZXI application, or CY7C1470V25-167BZXI equivalent, key selection criteria include clock-to-output timing (3.4 ns), burst order support (linear/interleaved), synchronous self-timed writes, IEEE 1149.1 JTAG compliance, and ZZ sleep mode implementation.
Technical Context
The device implements a fully synchronous, pipelined memory interface where all address, control, and data signals are registered on the rising edge of CLK. Internal NoBL™ logic eliminates bus latency by enabling back-to-back read/write operations without wait states, sustaining one data transfer per clock cycle across burst sequences.
It supports three chip enables (CE1–CE3), clock enable (CEN), asynchronous OE, and four byte write selects (BWa–BWd) for granular 8-bit writes. Output drivers are synchronously tri-stated during write data phases to prevent bus contention, and ZZ sleep mode reduces standby current to 120 mA while preserving data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - defines maximum clock-to-output delay for timing closure |
| Supply Voltages | 2.5 V VDD (core), 2.5 V VDDQ (I/O) - requires dual-rail 2.5 V supply design |
| Standby Current | 120 mA - measured in CMOS standby mode, not ZZ sleep |
| Burst Capability | Linear or interleaved - selectable via MODE pin, determines address increment pattern |
| JTAG Support | IEEE 1149.1 compliant - enables boundary scan testing without external test fixtures |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary clock input | Rising-edge-triggered master timing reference for all registers and internal operations |
| CEN | Clock enable | Asynchronous deassertion suspends clock domain, extending previous cycle without reset |
| CE1–CE3 | Chip enable inputs | Three-level synchronous bank select; all must be active for device access |
| WE | Write enable | Active-low synchronous control that initiates self-timed write sequence with BWx |
| BWa–BWd | Byte write selects | Four independent 8-bit write masks for 36-bit data bus (DQa–DQd) |
| OE | Output enable | Asynchronous control for output buffer tri-state; does not affect internal timing |
| ZZ | Deep power-down | Asynchronous sleep entry; requires external tie to GND per errata (Pin 64) |
| ADV/LD | Address valid/load | Synchronizes address latching; controls burst address generation and mode selection |
| MODE | Burst order select | Configures linear vs. interleaved burst addressing on power-up or reset |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables true back-to-back read/write with zero wait states, achieving 100% bus utilization at 167 MHz |
| Fully Registered I/O | All inputs and outputs pass through clocked registers, eliminating setup/hold violations in high-speed PCB layouts |
| Synchronous Self-Timed Writes | Internal write completion detection eliminates need for external write acknowledge or timing margining |
| Byte Write Granularity | Four independent 8-bit write masks allow partial-word updates without read-modify-write cycles |
| ZZ Sleep Mode | Reduces active power during idle periods while retaining SRAM data; requires external GND connection per errata |
Applications
| Telecom Line Cards | High-Speed Test Equipment |
|---|---|
|
Use Scenario: Buffering variable-length Ethernet frames in 10G/25G line interface modules. IC Role / Device Role / Timing Role: Pipelined SRAM acting as first-in-first-out (FIFO) packet buffer with deterministic 3.4 ns read latency. Use Value: Enables full-line-rate forwarding without microsecond-scale jitter introduced by wait-state insertion or asynchronous handshaking. |
Use Scenario: Capturing high-resolution analog waveforms at 167 MS/s in automated test equipment. IC Role / Device Role / Timing Role: High-bandwidth memory buffer interfacing directly with ADC/DAC controllers via synchronous parallel bus. Use Value: Sustains continuous 167 MT/s write/read throughput with no pipeline stalls, preserving signal integrity across multi-megabyte capture buffers. |
| Industrial PLC Backplanes | Avionics Data Recorders |
|
Use Scenario: Real-time I/O data exchange between redundant CPU modules over parallel backplane bus. IC Role / Device Role / Timing Role: Dual-ported SRAM replacement supporting concurrent read/write access with guaranteed coherency. Use Value: Eliminates arbitration logic and bus turnaround delays, reducing inter-module communication latency to single-cycle precision. |
Use Scenario: Storing flight-critical sensor telemetry with power-loss resilience in DO-254-certified recorders. IC Role / Device Role / Timing Role: Nonvolatile-buffered memory stage holding data prior to EEPROM/Flash write, using ZZ mode during idle intervals. Use Value: Maintains data retention during brownout events while cutting standby power by >85% versus standard CMOS standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V251L15PF | 15 ns access time, 66 MHz max frequency, 2.5 V only, 128-pin PQFP | Limited to lower bandwidth systems; lacks burst capability and JTAG | Select when cost-sensitive designs tolerate reduced throughput and simpler test requirements |
| ISSI IS61WV102432BLL-167TQLI | 167 MHz, 32M × 32 organization, 3.3 V tolerant I/O, 165-ball FBGA | Different data width and voltage tolerance; no ZZ sleep mode or ADV/LD pin | Choose for 32-bit systems needing higher density and 3.3 V compatibility, accepting trade-off in low-power control |
Compared with IDT72V251L15PF and IS61WV102432BLL-167TQLI, CY7C1470V25-167BZXI uniquely delivers 167 MHz zero-wait-state operation in a 100-pin TQFP with integrated ZZ sleep and JTAG, making it optimal for space-constrained, high-reliability telecom and test platforms requiring deterministic latency and production testability.
Availability
CY7C1470V25-167BZXI is available at Aetrix Electronics and suitable for telecom line cards, high-speed test equipment, and industrial PLC backplanes requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for CY7C1470V25-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, focusing on industrial, automotive, and communications infrastructure markets with ISO/TS 16949 and IATF 16949 certified manufacturing.
This device belongs to the NoBL™ SRAM product line, engineered specifically for deterministic-latency, high-throughput buffering in packet-switched networks, real-time instrumentation, and safety-critical control systems where bus efficiency and timing predictability are mandatory.
FAQ
What is the function of the ADV/LD pin on CY7C1470V25-167BZXI?
The ADV/LD (Address Valid/Load) pin controls address latching and burst address generation. When asserted, it loads the initial address for burst sequences and determines whether subsequent addresses increment linearly or interleaved based on the MODE pin state. It also serves as a synchronization point for address transitions in pipelined operation, ensuring deterministic timing alignment across the memory interface.
Does CY7C1470V25-167BZXI support both linear and interleaved burst modes?
Yes, burst order is selected by the MODE pin at power-up or reset. Linear mode increments addresses sequentially (e.g., 0x00, 0x01, 0x02), while interleaved mode follows a bit-reversal pattern (e.g., 0x00, 0x02, 0x01, 0x03) optimized for cache line access. Both modes are fully supported in read and write bursts and require no software configuration after initialization.
How is the ZZ (sleep) pin implemented, and what is the errata requirement?
The ZZ pin places the device in deep power-down mode, reducing current draw while retaining data. Per datasheet errata (page 36), Pin 64 (ZZ) must be externally connected to ground - it is not internally pulled down. Failure to do so prevents reliable entry into ZZ mode and may cause undefined standby behavior or increased leakage current.
Can CY7C1470V25-167BZXI operate with a 3.3 V I/O supply?
No. The device requires strict 2.5 V ±0.2 V for both VDD (core) and VDDQ (I/O). Its I/O buffers are not 3.3 V tolerant, and applying 3.3 V to VDDQ exceeds absolute maximum ratings, risking permanent damage. Level-shifting circuitry is required when interfacing with 3.3 V controllers or FPGAs.
CY7C1470V25-167BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470V25-167BZXI FAQ
1.How can I place an order for CY7C1470V25-167BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470V25-167BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470V25-167BZXI reliable?
The price and inventory of CY7C1470V25-167BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V25-167BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1470V25-167BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470V25-167BZXI transactions.
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CY7C1470V25-167BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470V25-167BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470V25-167BZXI?
For technical support, including CY7C1470V25-167BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470V25-167BZXI requirements.
6.How does Aetrix verify that CY7C1470V25-167BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1470V25-167BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V25-167BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1470V25-167BZXI?
All CY7C1470V25-167BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V25-167BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470V25-167BZXI part is unused and in its original packaging.
Return procedure for CY7C1470V25-167BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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