Infineon Technologies CY7C1470V25-200AXCT
- Part No.:
- CY7C1470V25-200AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1470V25-200AXCT.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,187
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Product details
Overview
CY7C1470V25-200AXCT from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states. It features fully registered inputs/outputs, 2.5 V core and I/O supply (VDDQ), 3.0 ns clock-to-output time, and byte-write capability via four BW pins. It is deployed in high-throughput network packet buffers and FPGA co-processor memory interfaces requiring deterministic latency.
For engineers reviewing the CY7C1470V25-200AXCT datasheet, CY7C1470V25-200AXCT pinout, CY7C1470V25-200AXCT application, or CY7C1470V25-200AXCT equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed write control, JTAG boundary scan compliance, and TQFP/FBGA package compatibility for board-level timing closure and thermal management.
Technical Context
The device implements a pipelined read/write architecture with three synchronous chip enables (CE1–CE3), clock enable (CEN), and asynchronous output enable (OE). All address, data, and control signals are registered on the rising edge of CLK, enabling true back-to-back operations without bus latency.
NoBL™ logic eliminates bus turnaround delay by synchronously tri-stating outputs during write data phases and using internal self-timed write circuitry. Burst capability supports both linear and interleaved orders, and the ZZ sleep mode reduces standby current to 120 mA while maintaining data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 200 MHz - enables 200 million transfers/sec with zero wait states |
| Access Time | 3.0 ns - defines minimum clock-to-output delay for timing budgeting |
| Supply Voltage | 2.5 V core (VDD) and I/O (VDDQ) - requires single-rail 2.5 V power design |
| Byte Write Pins | BWa–BWd (4 pins) - enables independent 9-bit write masking per 36-bit word |
| Standby Current | 120 mA - measured in CMOS standby mode, critical for low-power idle states |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing without external test fixtures |
Pinout & Package
Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. Pin functions validated per Cypress Document No. 38-05290 Rev. *V.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary synchronous clock input | Rising-edge-triggered register control for all inputs/outputs; qualified by CEN |
| CEN | Clock enable | Deassertion suspends clock domain operation and extends previous cycle - used for power gating |
| CE1, CE2, CE3 | Synchronous chip enables | Three-level bank select; all must be active for device access - supports multi-bank memory systems |
| WE | Write enable | Active-high synchronous write strobe; combined with BWx for partial writes |
| BWa–BWd | Byte write selects | Four independent 9-bit masks for 36-bit data bus - enables granular write without read-modify-write |
| OE | Asynchronous output enable | Tri-states DQ outputs immediately; used for bus contention avoidance during writes |
| ZZ | Deep sleep control | Active-low pin (must be tied to GND per errata); reduces current to 120 mA while retaining data |
| DQa–DQd | Data I/O (36-bit) | Bi-directional, registered data bus; DQPa–DQPd provide parity bits for error detection |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Eliminates bus latency by enabling consecutive read/write cycles with no wait states - increases effective bandwidth by >30% vs. async SRAM |
| Internal Self-timed Output Control | Removes need for external OE timing control - simplifies PCB layout and reduces timing margin risk |
| Linear/Interleaved Burst Modes | Configurable via MODE pin - matches CPU/FPGA burst patterns without software overhead |
| Synchronous Self-timed Writes | On-chip write completion detection - avoids external write acknowledge logic and reduces control path complexity |
| JTAG Boundary Scan (IEEE 1149.1) | Full pin-level testability - supports automated ICT and solder joint validation in high-reliability assemblies |
Applications
| Network Packet Buffer | FPGA Co-Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory between MAC and switch fabric ASICs. Use Value: 200 MHz zero-wait-state operation ensures line-rate buffering for 10 GbE traffic without frame loss. |
Use Scenario: Acting as instruction/data cache between FPGA fabric and embedded soft-core processor (e.g., MicroBlaze). IC Role / Device Role / Timing Role: Synchronous pipelined memory interface aligned to FPGA clock domain. Use Value: Fully registered I/O and burst modes reduce setup/hold timing violations and simplify static timing analysis. |
| Telecom Line Card Memory | Industrial Real-Time Controller Buffer |
Use Scenario: Buffering TDM voice channels and signaling data in carrier-grade base station line cards. IC Role / Device Role / Timing Role: Deterministic-access memory supporting strict jitter and latency budgets. Use Value: 3.0 ns clock-to-output and synchronous self-timed writes guarantee sub-10 ns timing predictability. |
Use Scenario: Holding motion control command queues and sensor fusion results in PLC-based CNC systems. IC Role / Device Role / Timing Role: Reliable, low-power buffer with ZZ sleep mode for energy-constrained edge deployments. Use Value: 120 mA CMOS standby current and robust 2.5 V I/O tolerance ensure stable operation in noisy industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2125L15PF | 36-bit, 2M × 36, 15 ns access, 3.3 V only, no ZZ mode | Lacks deep sleep and NoBL™ zero-wait-state operation - requires wait-state insertion in 200 MHz designs | Select when legacy 3.3 V system integration is required and timing margin allows ≥15 ns latency. |
| ISSI IS61WV102436B | 36-bit, 1M × 36, 167 MHz max, 2.5 V, no JTAG or burst order selection | Lower density and frequency; lacks MODE pin for burst configuration and IEEE 1149.1 test support | Choose for cost-sensitive, lower-bandwidth applications where JTAG and linear/interleaved burst are not needed. |
Compared with IDT72V2125L15PF and IS61WV102436B, CY7C1470V25-200AXCT delivers higher throughput via NoBL™ architecture, tighter timing control through 3.0 ns access, and production-test readiness via integrated JTAG - making it optimal for new 200 MHz+ designs requiring reliability and scalability.
Availability
CY7C1470V25-200AXCT is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom line card memory applications requiring stable component supply across multi-year production cycles.
Supply support for CY7C1470V25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for industrial, automotive, and communications markets.
CY7C1470V25 belongs to the Cypress NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in switching fabrics, protocol accelerators, and real-time embedded controllers.
FAQ
What is the function of the ZZ pin, and how must it be connected?
The ZZ pin enables deep sleep mode to reduce standby current to 120 mA while retaining memory contents. Per documented errata (page 36), ZZ must be externally tied to ground - leaving it floating or pulling high disables sleep functionality and may cause unpredictable behavior. This requirement applies to both TQFP (Pin 64) and FBGA (Ball H11) packages.
How does the NoBL™ architecture improve system performance compared to standard ZBT SRAMs?
NoBL™ eliminates bus turnaround latency by enabling immediate back-to-back read/write operations without wait states. Unlike ZBT devices that require one-cycle gap between direction changes, CY7C1470V25-200AXCT transfers data every clock cycle - increasing effective bandwidth by up to 35% in mixed-access workloads typical of packet processing and DSP buffering.
Can the CY7C1470V25-200AXCT operate with a 3.3 V I/O supply?
No. The device requires strictly 2.5 V for both core (VDD) and I/O (VDDQ) supplies. Applying 3.3 V exceeds absolute maximum ratings and risks permanent damage. Interface with 3.3 V systems requires level-shifting circuitry or compatible 2.5 V logic families (e.g., LVTTL or SSTL_25) on the DQ and control buses.
Is JTAG boundary scan supported in all package variants?
Yes. IEEE 1149.1 JTAG is implemented identically across both the 100-pin TQFP and 165-ball FBGA packages. All required TAP signals (TCK, TMS, TDI, TDO) are assigned to dedicated pins/balls per the datasheet, and boundary scan functionality is verified in production test for both variants.
CY7C1470V25-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1470V25-200AXCT FAQ
1.How can I place an order for CY7C1470V25-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470V25-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470V25-200AXCT reliable?
The price and inventory of CY7C1470V25-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V25-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1470V25-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470V25-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1470V25-200AXCT?
CY7C1470V25-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470V25-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470V25-200AXCT?
For technical support, including CY7C1470V25-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470V25-200AXCT requirements.
6.How does Aetrix verify that CY7C1470V25-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1470V25-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V25-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1470V25-200AXCT?
All CY7C1470V25-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V25-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470V25-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1470V25-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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