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Infineon Technologies CY7C1470V25-200BZI

Part No.:
CY7C1470V25-200BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1470V25-200BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:319

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Product details

Overview

CY7C1470V25-200BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states. It features fully registered inputs/outputs, 2.5 V core and I/O supply (VDDQ), 3.0 ns clock-to-output time, and byte write capability via BWa–BWd pins. It is used in high-throughput network packet buffering and FPGA co-processor memory interfaces.

For engineers reviewing the CY7C1470V25-200BZI datasheet, CY7C1470V25-200BZI pinout, CY7C1470V25-200BZI application, or CY7C1470V25-200BZI equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, JTAG boundary scan compliance, ZZ sleep mode implementation, and TQFP/FBGA package compatibility for board layout and thermal management.

Technical Context

The device implements a pipelined read/write architecture with No Bus Latency™ logic, enabling true back-to-back operations without wait states. All address, control, and data signals are registered on the rising edge of CLK, and output drivers are synchronously tri-stated during write cycles to prevent bus contention.

It supports three chip enables (CE1, CE2, CE3) for bank selection, asynchronous OE for output control, and clock enable (CEN) to suspend operation. Burst addressing is configurable via MODE pin for linear or interleaved order, and internal self-timed output buffer control eliminates need for external OE timing coordination.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 200 MHz - enables 200 MT/s sustained throughput with no wait states
Access Time 3.0 ns - clock-to-output delay determines minimum read cycle latency
Supply Voltage 2.5 V core (VDD) and I/O (VDDQ) - requires single low-voltage rail, compatible with 2.5 V logic families
Byte Write Pins BWa–BWd (4 pins) - enables independent 9-bit write masking per 36-bit word
Package 100-pin TQFP (14 × 20 × 1.4 mm) - JEDEC-standard Pb-free, surface-mount, suitable for industrial PCB assembly
Sleep Mode ZZ pin-controlled - reduces standby current to ≤120 mA when asserted and clock stopped
JTAG Support IEEE 1149.1 compliant - enables boundary scan testing without additional test fixtures

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected). Pin 64 (ZZ) must be externally tied to ground per errata on page 36.

Pin Circuit Role Design Meaning
CLK Primary clock input Rising-edge-triggered register clock for all synchronous inputs and outputs
CEN Clock enable Deassertion suspends internal clock domain while preserving previous state
CE1/CE2/CE3 Chip enable inputs Three-level decode for multi-bank memory mapping; all must be active for access
WE Write enable Active-low signal qualifying write operations; combined with BWx for byte masking
BWa–BWd Byte write selects Four independent 9-bit write masks for 36-bit data bus (each controls one 9-bit nibble)
OE Output enable Asynchronous control for output buffer tri-state; does not affect internal timing
ADV/LD Address valid/load Qualifies address latching on rising CLK; enables burst address generation
ZZ Deep sleep control Active-low pin requiring external GND tie (errata); reduces power by disabling clocks and I/O
DQa–DQd Data I/O bus 36-bit bidirectional data interface (four 9-bit groups); fully registered I/O path
DQPa–DQPd Parity output pins Four parity bits (one per 9-bit byte) for error detection in safety-critical systems

Key Features

Feature Design Value
NoBL™ Architecture Enables unlimited consecutive read/write cycles with zero wait states, eliminating pipeline stalls in burst-heavy traffic
Synchronous Self-Timed Writes On-chip write timing control ensures reliable data capture without external write pulse width constraints
Configurable Burst Order MODE pin selects linear or interleaved burst addressing - matches CPU or DSP memory access patterns
Integrated Parity Support DQPa–DQPd provide per-byte parity bits, enabling ECC-capable systems without external logic
JTAG Boundary Scan Full IEEE 1149.1 compliance simplifies PCB test coverage and interconnect validation in dense layouts
Low-Power Sleep Modes ZZ mode + stop-clock option reduces active standby current to ≤120 mA, critical for thermal-limited modules

Applications

Network Packet Buffering FPGA Co-Processor Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between ingress/egress MACs and traffic manager logic.

Use Value: 200 MHz pipelined operation sustains 7.2 GB/s aggregate bandwidth (36-bit × 200 MHz), eliminating frame drop under bursty traffic.

Use Scenario: Offloading real-time signal processing tasks from host CPU to FPGA-accelerated subsystems in radar or medical imaging.

IC Role / Device Role / Timing Role: Dual-port accessible memory for synchronized data exchange between CPU interface and FPGA datapath.

Use Value: Byte-write capability (BWs) and parity outputs (DQPs) support partial updates and integrity checking in deterministic real-time pipelines.

Telecom Line Card Buffering Industrial PLC Data Logging

Use Scenario: Temporary storage of TDM voice channels and control messages in carrier-grade DSLAM line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as jitter buffer and protocol translation scratchpad between PHY and controller.

Use Value: 3.0 ns clock-to-output and zero-wait-state reads ensure sub-microsecond latency for time-sensitive channel alignment.

Use Scenario: Cyclic acquisition and timestamped storage of sensor data in ruggedized programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile-backed fast memory for buffering transient measurements before flash commit.

Use Value: ZZ sleep mode reduces idle power to <120 mA while retaining data, extending operational uptime in fanless enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 36-bit, 2M × 36, 10 ns access, 100 MHz max - slower speed grade, different pinout, no parity outputs Lacks DQP pins and JTAG; suited for cost-sensitive non-safety designs without burst or parity needs Select when 100 MHz bandwidth suffices and parity/JTAG are unnecessary; verify PCB footprint compatibility
ISSI IS61WV204836BLL-200TQLI 2M × 36, 200 MHz, 3.0 ns, but no ZZ sleep mode or integrated parity; uses different BW pin mapping Missing deep-sleep control and per-byte parity - limits use in thermally constrained or safety-certified systems Prefer where lowest BOM cost is primary; avoid in applications requiring guaranteed sleep-mode current or ECC support

Compared with IDT72V2115L10PF and IS61WV204836BLL-200TQLI, CY7C1470V25-200BZI uniquely combines 200 MHz zero-wait-state operation, hardware parity outputs, JTAG testability, and validated ZZ sleep behavior - making it optimal for high-reliability telecom and industrial control where timing determinism and test coverage are mandatory.

Availability

CY7C1470V25-200BZI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom line card buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470V25-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and long-term supply commitment for legacy Cypress memory and microcontroller portfolios.

This device belongs to the NoBL™ SRAM product line, designed specifically for high-speed, low-latency memory interfacing in networking infrastructure, baseband processing, and real-time embedded systems demanding deterministic burst performance.

FAQ

What is the function of the ADV/LD pin in CY7C1470V25-200BZI?

The ADV/LD (Address Valid/Load) pin qualifies address latching on the rising edge of CLK. When asserted, it enables burst address generation for sequential accesses; when deasserted, it holds the current address. It directly controls the internal address counter used in linear or interleaved burst modes, and its timing relative to CLK defines valid address setup/hold windows per datasheet AC specs.

Does CY7C1470V25-200BZI support both linear and interleaved burst orders?

Yes - burst order is selected by the MODE pin: logic high configures linear burst (incrementing addresses), logic low selects interleaved burst (bit-reversed address sequence). This matches standard CPU cache line fetch patterns and allows optimization for specific processor or DMA controller architectures without firmware changes.

Why must the ZZ pin be tied to ground?

Per documented errata (page 36), the ZZ pin (Pin 64 in TQFP, Ball H11 in FBGA) exhibits undefined behavior unless externally pulled to ground. Failure to do so may cause erratic sleep entry/exit or increased standby current. This is a silicon-level requirement, not a recommendation, and applies to all speed grades and packages.

How does the CY7C1470V25-200BZI handle simultaneous read and write operations on the same address?

The device implements write-before-read coherency: when a write and read target the same location in the same burst sequence, the newly written data appears on the output bus in the subsequent clock cycle. This is enforced by internal registry and data coherency control logic, ensuring deterministic behavior without external arbitration or wait-state insertion.

CY7C1470V25-200BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1470V25-200BZI FAQ

1.How can I place an order for CY7C1470V25-200BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470V25-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470V25-200BZI reliable?

The price and inventory of CY7C1470V25-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V25-200BZI is usually 5 days.

3.What payment methods are accepted for CY7C1470V25-200BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470V25-200BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470V25-200BZI?

CY7C1470V25-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470V25-200BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470V25-200BZI?

For technical support, including CY7C1470V25-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470V25-200BZI requirements.

6.How does Aetrix verify that CY7C1470V25-200BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1470V25-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V25-200BZI meets industry standards.

7.What is the process for return or replacement of CY7C1470V25-200BZI?

All CY7C1470V25-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V25-200BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470V25-200BZI part is unused and in its original packaging.

Return procedure for CY7C1470V25-200BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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