Infineon Technologies CY7C1470V25-200BZIT

Overview

CY7C1470V25-200BZIT from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states. It features fully registered inputs/outputs, 2.5 V core and I/O supply (VDDQ), 3.0 ns clock-to-output time, and byte write capability via BWa–BWd pins. It is used in high-throughput network packet buffers and telecom line-card data path memory.

For engineers reviewing the CY7C1470V25-200BZIT datasheet, CY7C1470V25-200BZIT pinout, CY7C1470V25-200BZIT application, or CY7C1470V25-200BZIT equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, JTAG boundary scan compliance, ZZ sleep mode implementation, and TQFP/FBGA package compatibility for board layout and thermal management.

Technical Context

The device implements a pipelined read/write architecture with on-chip address and data coherency control logic, enabling true back-to-back operations without bus latency. All inputs-including address, control, and data-are registered on the rising edge of CLK, and all outputs pass through output registers synchronized to the same clock edge.

It supports synchronous burst reads/writes with programmable burst order (linear or interleaved), IEEE 1149.1 JTAG boundary scan, and three chip enables (CE1–CE3) for flexible bank selection. The ZZ pin enables low-power sleep mode, and CEN suspends clock operation while retaining state.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm). Pin functions are validated per Cypress document 38-05290 Rev. *V (pages 6–7).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with AS7C362000B-200BIN and IS61WV204836BLL-200TQLI, CY7C1470V25-200BZIT uniquely delivers JTAG testability, dual-burst mode selection, and guaranteed 3.0 ns tCO-critical for new designs requiring production test coverage and mixed-traffic memory access patterns.

Availability

CY7C1470V25-200BZIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470V25-200BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

CY7C1470V25-200BZIT belongs to Infineon's legacy Cypress high-speed SRAM product line, engineered specifically for deterministic, low-latency data buffering in communications infrastructure and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1470V25-200BZIT?

The MODE pin selects burst addressing order: logic high enables linear burst, logic low enables interleaved burst. This setting is sampled at power-up or reset and remains static during operation. It directly controls the internal burst counter sequence and must match the host controller's burst protocol configuration to avoid address misalignment.

How does the ZZ pin operate, and what is the errata requirement?

The ZZ pin places the device in low-power sleep mode when asserted low. Per datasheet errata (page 36), ZZ (Pin 64 in TQFP, Ball H11 in FBGA) must be externally tied to ground to ensure reliable sleep entry and avoid undefined behavior. Floating or pulled-high ZZ causes inconsistent current draw and potential data retention issues during power transitions.

Can CY7C1470V25-200BZIT operate with only VDD powered, leaving VDDQ unconnected?

No. Both VDD (core) and VDDQ (I/O) must be supplied with 2.5 V ±0.2 V simultaneously. VDDQ powers the output drivers and input receivers; disconnecting it disables all data I/O functionality and may cause latch-up or excessive leakage. The device will not pass functional tests or meet AC specifications without both rails active.

Is the CY7C1470V25-200BZIT pin-compatible with ZBT SRAMs?

Yes-it is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT SRAMs (e.g., IDT 72T36xx series). Identical pin assignments for CLK, CEN, CE1–CE3, WE, OE, BWa–BWd, DQx, and address lines allow drop-in replacement in existing ZBT-based layouts, provided timing margins accommodate the 3.0 ns tCO and NoBL-specific control sequencing.