Infineon Technologies CY7C1470V25-200BZXC

Overview

CY7C1470V25-200BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states. It features fully registered I/O, 2.5 V core and I/O supply (VDDQ), 3.0 ns clock-to-output time, and byte write capability via BWa–BWd pins. It is used in high-throughput network packet buffering and FPGA co-processor memory interfaces.

For engineers reviewing the CY7C1470V25-200BZXC datasheet, CY7C1470V25-200BZXC pinout, CY7C1470V25-200BZXC application, or CY7C1470V25-200BZXC equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, JTAG boundary scan compliance, ZZ sleep mode implementation, and TQFP-100 package compatibility with legacy ZBT™ designs.

Technical Context

The device implements a fully synchronous, pipelined read/write architecture where all inputs and outputs are registered on the rising edge of CLK, enabling true back-to-back operations without bus latency. Its NoBL™ logic eliminates asynchronous output enable timing constraints by using internally self-timed output buffer control.

Burst capability supports both linear and interleaved address sequences, controlled by the MODE pin. Write operations are synchronized and self-timed, with byte-level granularity enabled by four independent Byte Write Selects (BWa–BWd), and chip select is managed via three synchronous enables (CE1–CE3).

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V255L15PF and IS61WV102436B, CY7C1470V25-200BZXC delivers 50% higher bandwidth, integrated burst address generation, and production-test-ready JTAG - making it optimal for new high-speed communications designs requiring zero-wait-state determinism.

Availability

CY7C1470V25-200BZXC is available at Aetrix Electronics and suitable for network switch buffering, FPGA accelerator memory, telecom baseband processing, and industrial motion control requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470V25-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for communications and industrial markets.

This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for zero-latency, high-throughput memory interfacing in networking, telecom, and real-time embedded systems.

FAQ

What is the function of the ADV/LD pin in CY7C1470V25-200BZXC?

The ADV/LD pin controls burst address sequencing: when asserted low, it loads the initial address from A[19:0]; on subsequent clocks, it advances the internal address counter for linear or interleaved bursts. It replaces external address generation logic and is essential for NoBL™ burst operation.

How does the ZZ pin operate, and what is the errata requirement?

The ZZ pin enables deep sleep mode, reducing standby current to under 120 µA. Per datasheet errata (page 36), Pin 64 (ZZ) must be externally tied to ground - leaving it floating or pulled high causes undefined behavior and violates guaranteed sleep current specs.

Is CY7C1470V25-200BZXC compatible with ZBT™ SRAMs in PCB layout?

Yes - it is JEDEC pin-compatible and functionally equivalent to ZBT™ devices such as IDT72V255. The 100-pin TQFP footprint, signal naming (CE, WE, OE, BWx), and timing behavior match ZBT™ specifications, allowing direct replacement without board revision.

Does this SRAM support interleaved burst mode, and how is it selected?

Yes - interleaved burst is enabled by driving the MODE pin high during the initial access cycle. The device then generates addresses per JEDEC interleaved pattern (e.g., 0, 2, 4, 6, 1, 3, 5, 7). Linear burst uses MODE = low. Both modes are fully synchronous and require no external address sequencing logic.