Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1470V33-167AXCT

Part No.:
CY7C1470V33-167AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1470V33-167AXCT.pdf
Description:
IC SRAM 72MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,843

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1470V33 from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, supporting zero-wait-state 167 MHz bus operation, 3.3 V core supply, 3.3 V/2.5 V I/O supply, and JEDEC-standard Pb-free 100-pin TQFP packaging. It enables true back-to-back read/write cycles in high-throughput networking buffers and packet-switching ASIC interfaces.

For engineers reviewing the CY7C1470V33 datasheet, CY7C1470V33 pinout, CY7C1470V33 application, or CY7C1470V33 equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, byte-write capability (BWa–BWd), clock enable (CEN) control, and ZZ sleep mode implementation per errata guidance.

Technical Context

The device implements fully registered inputs and outputs synchronized to the rising edge of CLK, with internal self-timed output buffer control eliminating asynchronous OE timing constraints. Three chip enables (CE1–CE3) and dedicated byte write selects (BWa–BWd) enable fine-grained bank and data masking control.

NoBL™ logic ensures consecutive read/write operations transfer data every clock cycle without bus latency. Burst addressing supports both linear and interleaved orders, and JTAG boundary scan (IEEE 1149.1) is integrated for production testability - all operating within commercial temperature range (0 °C to +70 °C).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency167 MHz - enables 167 MT/s sustained throughput with no wait states
Access Time3.4 ns - defines minimum clock-to-output delay for timing closure
Supply Voltages3.3 V core (VDD); 3.3 V or 2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing
Operating Current450 mA max at 167 MHz - critical for power budgeting in dense memory subsystems
Standby Current120 mA max - determines quiescent power in low-activity states
Package100-pin TQFP (14 × 20 × 1.4 mm), Pb-free - standard footprint for reflow-compatible PCB assembly

Pinout & Package

Package: 100-pin TQFP (JEDEC MS-026AC, 14 mm × 20 mm × 1.4 mm body height, Pb-free finish).

PinCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus for 2M-word addressing; registered on rising CLK edge
CLKMaster Clock InputSynchronizes all register transfers; qualified by CEN for gated operation
CENClock EnableActive-low signal that suspends CLK propagation to internal registers
WEWrite EnableControls initiation of synchronous self-timed write cycles
BWa–BWdByte Write EnablesFour independent 9-bit write masks for 36-bit data bus granularity
CE1–CE3Chip EnablesThree-level synchronous enable hierarchy for multi-bank memory systems
OEOutput EnableAsynchronous control for tristating DQ outputs during write sequences
ZZDeep Sleep ControlMust be externally tied to GND per Errata (Page 35) to avoid undefined behavior
DQa–DQdData I/O (36-bit)Bi-directional, registered data bus; DQPa–DQPd are parity bits (optional)
ADV/LDAddress Valid/LoadIndicates valid address setup or loads burst counter for sequential access

Key Features

FeatureDesign Value
NoBL™ ArchitectureEliminates bus latency by enabling back-to-back read/write with data on every clock cycle
Synchronous Self-Timed WritesRemoves external write pulse timing constraints; internal logic manages write duration
Byte Write Selects (BWa–BWd)Enables partial 9-bit writes to 36-bit bus without read-modify-write overhead
ZZ Sleep ModeReduces standby current to ≤120 mA while preserving data; requires external GND tie per errata
JTAG Boundary Scan (IEEE 1149.1)Supports automated PCB test and interconnect verification in production environments

Applications

Telecom Line Card BufferHigh-Speed Packet Switching ASIC

Use Scenario: Stores incoming/outgoing packet headers and payloads in OC-192/STM-64 line interface modules.

IC Role / Device Role / Timing Role: Primary burst-access SRAM buffer interfacing directly with SerDes PHY and traffic manager ASIC.

Use Value: 167 MHz zero-wait-state operation sustains 6 Gbps aggregate bandwidth across 36-bit bus, matching SONET frame timing requirements.

Use Scenario: Implements forwarding table cache and queue depth tracking in multi-port Ethernet switches.

IC Role / Device Role / Timing Role: Pipelined memory resource for concurrent lookup and update operations in TCAM-assisted data paths.

Use Value: Fully registered I/O and NoBL™ architecture ensure deterministic 3.4 ns clock-to-output timing, meeting sub-10 ns pipeline stage budgets.

Industrial Real-Time ControllerRadar Signal Processing FIFO

Use Scenario: Holds motion control trajectory data and sensor fusion results in CNC and PLC motion engines.

IC Role / Device Role / Timing Role: Deterministic latency SRAM used for dual-port-like access via time-multiplexed CE and BW controls.

Use Value: Synchronous self-timed writes and CEN-gated clocking enable precise jitter-controlled execution in 100 µs control loops.

Use Scenario: Buffers ADC samples between RF front-end and FFT engine in automotive radar ECU.

IC Role / Device Role / Timing Role: High-reliability burst FIFO storing 2M complex samples before baseband processing.

Use Value: ZZ sleep mode reduces idle power by >75% versus active standby, extending thermal margin in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3616L16PF16-Mbit (512K × 36), 166 MHz max, 3.3 V only, 128-pin PQFPLower density; lacks ZZ sleep and JTAG; no 2.5 V I/O supportSelect when footprint compatibility and lower cost outweigh density and feature needs
ISSI IS61WV102436B36-Mbit (1M × 36), 166 MHz, 3.3 V core/I/O, 100-pin TQFPHalf density; no burst mode; no byte write; no JTAG; no ZZ modeChoose for simpler control logic where full NoBL™ features are unnecessary

Compared with IDT72T3616L16PF and IS61WV102436B, CY7C1470V33 delivers double the memory capacity, integrated sleep and test features, and flexible I/O voltage support - essential for next-generation telecom and embedded real-time systems requiring scalability and long-term maintainability.

Availability

CY7C1470V33 is available at Aetrix Electronics and suitable for telecom line cards, high-speed packet switching ASICs, industrial real-time controllers, and radar signal processing FIFOs requiring stable component supply and long-lifecycle support.

Supply support for CY7C1470V33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, memory, and security solutions.

CY7C1470V33 belongs to Infineon's legacy Cypress synchronous SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking infrastructure and real-time embedded systems.

FAQ

What is the required connection for the ZZ pin on CY7C1470V33?

The ZZ pin (Pin 64 in TQFP package) must be externally connected to ground, as specified in the Errata on page 35 of the datasheet. Leaving ZZ floating or driving it high causes undefined sleep behavior and potential data retention issues. This is a mandatory hardware design requirement, not an optional configuration.

Does CY7C1470V33 support 2.5 V I/O operation with 3.3 V core supply?

Yes - CY7C1470V33 supports independent 3.3 V core (VDD) and 2.5 V I/O (VDDQ) supplies. VDDQ pins must be biased at 2.5 V ± 0.1 V, and all DQ, BW, CE, OE, and ADV/LD signals referenced to VDDQ. This allows seamless interfacing with 2.5 V logic families while maintaining 3.3 V internal timing margins.

How does the NoBL™ architecture improve system throughput compared to standard ZBT SRAMs?

NoBL™ eliminates bus turnaround delays by enabling immediate read-after-write or write-after-read transitions without wait states. Unlike ZBT devices requiring OE deassertion/reassertion or address hold times, CY7C1470V33 uses internal pipelining and registered outputs to deliver data every clock cycle - increasing effective bandwidth by up to 30% in burst-intensive workloads like packet buffering.

Can CY7C1470V33 be used in linear burst mode with interleaved burst addressing?

Yes - the device supports both linear and interleaved burst orders, selected via the MODE pin (high = linear, low = interleaved). Burst length is fixed at four words, and the burst counter advances automatically on each CLK edge after ADV/LD asserts. This flexibility allows optimization for cache line alignment (linear) or memory controller prefetch patterns (interleaved).

CY7C1470V33-167AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1470V33-167AXCT FAQ

1.How can I place an order for CY7C1470V33-167AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470V33-167AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470V33-167AXCT reliable?

The price and inventory of CY7C1470V33-167AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V33-167AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1470V33-167AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470V33-167AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1470V33-167AXCT?

CY7C1470V33-167AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470V33-167AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470V33-167AXCT?

For technical support, including CY7C1470V33-167AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470V33-167AXCT requirements.

6.How does Aetrix verify that CY7C1470V33-167AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1470V33-167AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V33-167AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1470V33-167AXCT?

All CY7C1470V33-167AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V33-167AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470V33-167AXCT part is unused and in its original packaging.

Return procedure for CY7C1470V33-167AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1470V33-167AXCT Tags

  • CY7C1470V33-167AXCT
  • CY7C1470V33-167AXCT PDF
  • CY7C1470V33-167AXCT Datasheet
  • CY7C1470V33-167AXCT Specifications
  • CY7C1470V33-167AXCT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1470V33-167AXCT
  • Buy CY7C1470V33-167AXCT
  • CY7C1470V33-167AXCT Price
  • CY7C1470V33-167AXCT Distributor
  • CY7C1470V33-167AXCT Supplier
  • CY7C1470V33-167AXCT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER