Infineon Technologies CY7C1470V33-167BZC
- Part No.:
- CY7C1470V33-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470V33-167BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,406
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Product details
Overview
CY7C1470V33 from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 167 MHz with 3.4 ns clock-to-output time, single 3.3 V core supply, and 3.3 V/2.5 V I/O support. It enables zero-wait-state back-to-back read/write operations in high-throughput network packet buffering systems.
For engineers reviewing the CY7C1470V33 datasheet, CY7C1470V33 pinout, CY7C1470V33 application, or CY7C1470V33 equivalent, key selection criteria include burst mode support (linear/interleaved), byte write capability (BWa–BWd), JTAG boundary scan compliance, ZZ sleep mode, and JEDEC-standard 100-pin TQFP packaging.
Technical Context
This SRAM implements fully registered synchronous interfaces: all address, control, and data signals pass through input registers on the rising clock edge; all outputs are clocked through output registers. Internal self-timed output buffer control eliminates asynchronous OE timing constraints.
The device supports three chip enables (CE1, CE2, CE3) for bank selection, synchronous self-timed writes, and burst access with ADV/LD-controlled address sequencing. Sleep mode is activated via the ZZ pin, requiring external grounding per errata on page 35 of Rev. *Y datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for timing closure | Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing |
| Power Consumption | 450 mA max operating current - determines thermal design margin at full speed |
| Burst Capability | Linear or interleaved burst order - matches processor/cache line fetch patterns |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testability in dense PCBs |
Pinout & Package
Package: JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm). Pin 64 (ZZ) requires external connection to ground per datasheet errata (page 35).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary synchronous clock input | Rising-edge-triggered register control for all inputs/outputs |
| CEN | Clock enable | Deassertion suspends operation and extends previous clock cycle |
| CE1, CE2, CE3 | Synchronous chip enables | Three-level decode for multi-bank memory mapping |
| BWa–BWd | Byte write selects | Independent 9-bit write masking for 36-bit data bus (four 9-bit bytes) |
| ADV/LD | Address valid/load | Controls burst address incrementing or loading new base address |
| ZZ | Deep power-down control | Active-low sleep mode entry; must be externally grounded per errata |
| DQa–DQd | Data I/O (36-bit) | Bi-directional, registered data bus with DQP parity pins |
| VDDQ | I/O power supply | Separate 3.3 V/2.5 V rail decoupling required for signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Enables true back-to-back read/write without pipeline stalls, achieving 100% bus utilization |
| Internally self-timed output buffers | Removes dependency on asynchronous OE timing, simplifying PCB layout and timing analysis |
| Full registration of inputs and outputs | Guarantees deterministic setup/hold margins across process/voltage/temperature corners |
| Synchronous self-timed writes | Eliminates external write pulse width constraints; internal logic manages write duration |
| Byte write capability (BWa–BWd) | Allows partial 9-bit writes within 36-bit word, reducing bus traffic and power in cache-line updates |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress packet buffer with burst-aligned access. Use Value: 167 MHz zero-wait-state operation sustains 6 Gbps aggregate throughput across 36-bit bus. | Use Scenario: Holding frame headers and control metadata in multi-port TDM over IP gateways. IC Role / Device Role / Timing Role: Synchronous burst-access memory interfaced to FPGA-based framer logic. Use Value: Linear burst mode aligns with 32-byte header fetch patterns, minimizing address overhead. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
Use Scenario: Serving as L2 instruction/data scratchpad in LTE/5G baseband SoCs. IC Role / Device Role / Timing Role: Pipelined SRAM bridging high-frequency processor core and slower DDR subsystem. Use Value: Fully registered interface ensures timing predictability under 167 MHz clock skew conditions. | Use Scenario: Temporarily storing FFT-processed chirp data in automotive radar ECU modules. IC Role / Device Role / Timing Role: Burst-capable memory supporting real-time streaming of 128-sample complex vectors. Use Value: Interleaved burst addressing matches FFT output ordering, avoiding software reordering latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3616L16PF | 16-Mbit (512K × 36), 167 MHz, same 100-pin TQFP but lacks ZZ sleep mode and JTAG | Lower density limits use in multi-gigabit buffering; no deep-sleep for power-constrained edge nodes | Select when cost sensitivity outweighs density and power features |
| AS7C33256A-167JC | 32-Mbit (1M × 32), 167 MHz, 100-pin TQFP, no burst mode or NoBL architecture | Non-pipelined operation introduces wait states during read/write transitions, reducing effective bandwidth | Select only for legacy designs requiring pin compatibility without burst optimization |
Compared with IDT72T3616L16PF and AS7C33256A-167JC, CY7C1470V33 delivers 2.25× higher density and deterministic zero-wait-state throughput via NoBL™, making it optimal for next-generation packet processing where latency and bandwidth are critical.
Availability
CY7C1470V33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and radar signal processing applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1470V33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and communications markets.
CY7C1470V33 belongs to Infineon's high-performance synchronous SRAM product line, designed specifically for zero-latency, burst-oriented data buffering in networking and real-time signal processing infrastructure.
FAQ
What is the required connection for the ZZ pin on CY7C1470V33?
The ZZ pin (Pin 64 in 100-pin TQFP) must be externally connected to ground to ensure proper deep power-down functionality. This requirement is documented in the errata on page 35 of datasheet Rev. *Y. Leaving ZZ floating or pulling high disables sleep mode and may cause undefined behavior during low-power operation.
Does CY7C1470V33 support both linear and interleaved burst modes?
Yes, CY7C1470V33 supports both linear and interleaved burst orders, selected via the MODE pin. Linear burst increments addresses sequentially (e.g., 0x00, 0x01, 0x02), while interleaved uses XOR-based addressing (e.g., 0x00, 0x02, 0x01, 0x03), matching cache-line fetch patterns in many processors and FPGAs.
How does the NoBL™ architecture eliminate bus latency?
NoBL™ eliminates bus latency by enabling consecutive read and write operations without wait states through fully registered pipelines and internal self-timed output control. Unlike conventional SRAMs, it avoids OE-driven asynchronous output enable delays and allows data transfer on every clock cycle, even during read-to-write transitions.
Can CY7C1470V33 operate with 2.5 V I/O voltage while maintaining 3.3 V core supply?
Yes, CY7C1470V33 supports independent 3.3 V core (VDD) and 2.5 V I/O (VDDQ) supplies. The VDDQ pins must be decoupled separately, and all I/O timing parameters (e.g., setup/hold) are specified for 2.5 V operation in the datasheet's 2.5 V AC test conditions section (page 20).
CY7C1470V33-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470V33-167BZC FAQ
1.How can I place an order for CY7C1470V33-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470V33-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1470V33-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V33-167BZC is usually 5 days.
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All CY7C1470V33-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V33-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1470V33-167BZC?
All CY7C1470V33-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V33-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470V33-167BZC part is unused and in its original packaging.
Return procedure for CY7C1470V33-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1470V33-167BZC Tags

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