Infineon Technologies CY7C1470V33-167BZXC

Overview

CY7C1470V33-167BZXC from Cypress Semiconductor is a 72 Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory interfaces in networking and telecom data paths. It operates at 167 MHz with 3.4 ns clock-to-output delay, supports byte-write via four BW inputs (BWa–BWd), uses single 3.3 V core supply and 3.3 V/2.5 V I/O supply, and features synchronous self-timed writes and JTAG boundary scan compliance.

For engineers reviewing the CY7C1470V33-167BZXC datasheet, CY7C1470V33-167BZXC pinout, CY7C1470V33-167BZXC application, or CY7C1470V33-167BZXC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), pipelined read/write timing alignment, synchronous tristate control of DQ outputs during write cycles, and compatibility with ZBT-style system buses requiring zero-wait-state back-to-back operations.

Technical Context

This SRAM implements fully registered synchronous operation: all address, control, and data inputs pass through input registers on the rising CLK edge, while all DQ/DQP outputs are latched by output registers also triggered on CLK rise. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back Read/Write transitions without wait states.

It supports linear or interleaved burst orders selected by the MODE strap pin, uses three synchronous chip enables (CE1 low, CE2 high, CE3 low) for bank selection, and includes asynchronous OE for output tristate control-automatically overridden during write data phases to prevent bus contention.

Key Specifications

Pinout & Package

The CY7C1470V33-167BZXC is packaged in a Pb-Free 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch) and also available in 165-ball FBGA. Pin functions are fully synchronous except OE (asynchronous) and MODE (strap).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and IS61WV204836BLL-167TQLI, the CY7C1470V33-167BZXC uniquely combines ZBT-compatible timing, configurable burst order, integrated parity I/O, and JTAG testability - making it the only option supporting both high-throughput packet buffering and functional safety validation in a single package.

Availability

CY7C1470V33-167BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing, and radar signal processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1470V33-167BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.

The CY7C1470V33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-frequency memory subsystems in packet-switched infrastructure and real-time signal processing platforms.

FAQ

What is the function of the MODE pin on CY7C1470V33-167BZXC?

The MODE pin is a static configuration input that selects burst order: pulled HIGH (or left floating) enables interleaved burst mode, while driven LOW selects linear burst mode. It must remain stable during device operation and is sampled only at power-up or reset. This setting determines how the internal address counter increments during burst reads/writes - critical for matching memory controller burst expectations.

How does the ZZ (Sleep) pin differ from CEN (Clock Enable) in power management?

ZZ is an active-low deep-sleep control that reduces standby current beyond what CEN achieves: CEN suspends clock recognition but retains internal state and leakage current, whereas ZZ places the core array and I/O drivers into ultra-low-power retention mode. ZZ requires longer wake-up latency (tZZ) than CEN resumption, making it suitable for idle periods between traffic bursts rather than cycle-level gating.

Can CY7C1470V33-167BZXC operate with 2.5 V I/O voltage while maintaining 3.3 V core supply?

Yes - the device supports independent VDDQ (I/O supply) at either 3.3 V or 2.5 V while VDD (core) remains at 3.3 V. This allows direct interfacing with 2.5 V FPGA I/O banks or ASIC interfaces without level shifters. VDDQ must be stable before VDD during power-up, and both supplies must meet specified tolerances (±0.3 V for VDD, ±0.2 V for VDDQ) to guarantee timing and signal integrity.

Is the CY7C1470V33-167BZXC pin-compatible with ZBT SRAMs such as the IDT72V2115?

Yes - it is pin-compatible and functionally equivalent to ZBT SRAMs in 2M × 36 configuration, including identical pin assignments for A0–A17, DQa–DQd, BWa–BWd, CE1/CE2/CE3, CLK, WE, OE, and CEN. However, CY7C1470V33 adds MODE, ZZ, and DQP pins not present on standard ZBT parts - these must be tied off (MODE high, ZZ high, DQP unused) for drop-in replacement in legacy ZBT designs.