Infineon Technologies CY7C1470V33-200BZI
- Part No.:
- CY7C1470V33-200BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1470V33-200BZI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,461
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Product details
Overview
CY7C1470V33-200BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36, operating at 200 MHz with zero wait states. It features fully registered I/O, 3.3 V core supply, 3.3 V/2.5 V I/O compatibility, and 3.0 ns clock-to-output delay. It serves in high-throughput packet buffering and network switch data path memory subsystems.
For engineers reviewing the CY7C1470V33-200BZI datasheet, CY7C1470V33-200BZI pinout, CY7C1470V33-200BZI application, or CY7C1470V33-200BZI equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability (BWa–BWd), JTAG boundary scan compliance, ZZ sleep mode control, and JEDEC-standard 100-pin TQFP packaging with Pb-free finish.
Technical Context
This SRAM implements a synchronous, pipelined read/write architecture with No Bus Latency™ logic enabling true back-to-back operations without wait states. All inputs and outputs are edge-triggered by the rising clock edge, and internal self-timed write circuitry eliminates external write pulse timing constraints.
The device supports three chip enables (CE1–CE3), clock enable (CEN), asynchronous output enable (OE), and four byte write selects (BWa–BWd). Its burst logic handles linear or interleaved address sequences, and IEEE 1149.1 JTAG boundary scan provides testability for high-density PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 72 Mbit (2M × 36 configuration) |
| Max clock frequency | 200 MHz - enables 200 MT/s sustained throughput with no wait states |
| Access time | 3.0 ns - defines minimum clock-to-output delay for timing-critical data paths |
| Supply voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant |
| Standby current | 120 mA max - determines power budget in low-activity buffer states |
| Burst modes | Linear and interleaved - matches CPU/DMA burst patterns in networking ASICs |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint with exposed thermal pad (not electrically connected).
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge synchronous reference for all register transfers; qualified by CEN |
| CEN | Clock enable | Active-low; suspends clock domain operation without resetting internal state |
| CE1, CE2, CE3 | Chip enable inputs | Three-level decode for bank selection in multi-SRAM systems |
| WE | Write enable | Active-low; initiates synchronous write cycle when asserted with valid address/data |
| BWa–BWd | Byte write enables | Four independent 9-bit write masks for granular 36-bit word updates |
| OE | Output enable | Asynchronous; tristates DQ outputs during writes to prevent bus contention |
| DQa–DQd | Data I/O (36-bit) | Four 9-bit bidirectional buses; each group shares common timing and drive strength |
| ZZ | Deep sleep control | Active-low; reduces standby current further; requires external tie to GND per errata (Pin 64) |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ architecture | Enables unlimited back-to-back read/write cycles with zero wait states, eliminating pipeline stalls in burst-heavy traffic |
| Byte write select (BWa–BWd) | Allows partial 9-bit writes within 36-bit word without read-modify-write overhead |
| Synchronous self-timed writes | Removes dependency on external write pulse width timing; simplifies controller design |
| JTAG boundary scan (IEEE 1149.1) | Supports automated PCB test and interconnect verification in dense routing environments |
| ZZ sleep mode | Reduces power beyond standard CMOS standby; requires external grounding per documented errata |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfaced to MAC and switching fabric controllers. Use Value: 200 MHz operation and NoBL™ architecture sustain full line-rate throughput across 10Gbps ports without read/write gaps. |
Use Scenario: Frame assembly/disassembly and header processing in carrier-grade DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Dual-port accessible SRAM used for descriptor management and payload staging between PHY and DSP subsystems. Use Value: Byte-write capability (BWa–BWd) enables efficient metadata updates without corrupting adjacent packet data in shared buffers. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
|
Use Scenario: Cyclic acquisition and timestamped storage of sensor values in deterministic real-time control loops. IC Role / Device Role / Timing Role: Deterministic-access memory mapped into processor's local bus for jitter-free sampling intervals. Use Value: Fully registered I/O and 3.0 ns clock-to-output ensure predictable setup/hold margins under 200 MHz bus timing. |
Use Scenario: Storage of stimulus/response vectors in automated IC functional testers requiring precise timing alignment. IC Role / Device Role / Timing Role: Synchronous pattern memory synchronized to tester's master clock for sub-nanosecond edge placement. Use Value: Interleaved burst mode matches tester's vector streaming sequence, minimizing address overhead and maximizing bandwidth utilization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PFI | 100 MHz max speed; 36-bit × 2M; 3.3 V only; no ZZ sleep mode | Lacks deep-sleep capability and 200 MHz performance; suitable for cost-sensitive non-real-time buffers | Select when lower power envelope and reduced timing margin requirements allow relaxed clock rate |
| ISSI IS61WV204836BLL-100BLI | 100 MHz max speed; 36-bit × 2M; 3.3 V core/I/O; no JTAG or burst mode | Missing NoBL™ architecture, burst capability, and boundary scan-limits use in high-throughput or test-critical designs | Choose only for legacy replacement where existing PCB layout and firmware do not require burst or JTAG features |
Compared with IDT72V2115L10PFI and IS61WV204836BLL-100BLI, the CY7C1470V33-200BZI delivers 100% higher bandwidth, integrated sleep control for dynamic power scaling, and JTAG support for production test coverage-making it uniquely suited for next-generation telecom and industrial real-time buffers.
Availability
CY7C1470V33-200BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.
Supply support for CY7C1470V33-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for demanding infrastructure applications.
The CY7C1470V33 belongs to Cypress' NoBL™ synchronous SRAM product line, engineered specifically for zero-latency, high-bandwidth data buffering in networking, telecom, and real-time industrial systems.
FAQ
What is the required connection for the ZZ pin on CY7C1470V33-200BZI?
The ZZ pin (Pin 64 in 100-pin TQFP) must be externally tied to ground to ensure proper deep-sleep functionality. This requirement is documented in the device errata (page 35 of Rev. *Y datasheet) due to silicon-level behavior affecting sleep current stability. Leaving ZZ floating or pulling high disables the feature and may cause excessive standby current.
Does CY7C1470V33-200BZI support both linear and interleaved burst addressing?
Yes, the device supports both linear and interleaved burst orders via internal burst logic controlled by the MODE pin. Linear mode increments addresses sequentially (e.g., 0x00, 0x01, 0x02), while interleaved mode uses XOR-based sequencing (e.g., 0x00, 0x02, 0x01, 0x03) to match CPU cache line access patterns. The selected mode persists until MODE is reasserted.
Can CY7C1470V33-200BZI operate with 2.5 V I/O while maintaining 3.3 V core supply?
Yes, the device supports independent 3.3 V core (VDD) and 2.5 V I/O (VDDQ) supplies. VDDQ must be stable within ±0.2 V of 2.5 V when used, and all DQ pins, BW signals, and OE are referenced to VDDQ. This allows direct interfacing with 2.5 V logic families without level shifters, preserving signal integrity at 200 MHz.
Is JTAG boundary scan enabled by default on CY7C1470V33-200BZI?
JTAG is enabled by default at power-up and remains active unless explicitly disabled via the TAP instruction set. The TDI, TDO, TCK, and TMS pins function as boundary scan I/O regardless of device operational mode. Disabling JTAG requires writing the BYPASS instruction and is not recommended for production boards requiring test coverage.
CY7C1470V33-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1470V33-200BZI FAQ
1.How can I place an order for CY7C1470V33-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1470V33-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1470V33-200BZI reliable?
The price and inventory of CY7C1470V33-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470V33-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1470V33-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470V33-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1470V33-200BZI?
CY7C1470V33-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1470V33-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1470V33-200BZI?
For technical support, including CY7C1470V33-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470V33-200BZI requirements.
6.How does Aetrix verify that CY7C1470V33-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1470V33-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470V33-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1470V33-200BZI?
All CY7C1470V33-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470V33-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1470V33-200BZI part is unused and in its original packaging.
Return procedure for CY7C1470V33-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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