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Infineon Technologies CY7C1471BV25-133AXCT

Part No.:
CY7C1471BV25-133AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1471BV25-133AXCT.pdf
Description:
IC SRAM 72MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,065

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Product details

Overview

CY7C1471BV25-133AXCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous NoBL™ SRAM with 2.5V VDDQ I/O supply, 133 MHz maximum clock frequency, 6.5 ns clock-to-output delay, and pin-compatible ZBT™ functionality. It serves as a high-throughput data buffer in network packet processors requiring zero-wait-state back-to-back read/write transitions.

For engineers reviewing the CY7C1471BV25-133AXCT datasheet, CY7C1471BV25-133AXCT pinout, CY7C1471BV25-133AXCT application, or CY7C1471BV25-133AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (4 × 9-bit), synchronous self-timed write control, and TQFP-100 package compatibility with JEDEC Pb-free standards.

Technical Context

The device implements a flow-through architecture with registered address, data, and control inputs synchronized to the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus dead cycles by enabling consecutive read/write operations with data valid on every clock cycle.

Burst addressing is controlled by ADV/LD and MODE pins, supporting linear or interleaved sequences across 2-bit counters. Output drivers are synchronously tri-stated during write data phases and automatically disabled upon CE deselection or OE deassertion-no external timing coordination required.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling single-chip buffering for 36-bit wide data paths in telecom line cards.
Max Clock Frequency 133 MHz - supports sustained 133 MT/s throughput without wait states in synchronous bus interfaces.
Access Time 6.5 ns clock-to-output - guarantees deterministic read latency critical for real-time packet forwarding pipelines.
I/O Voltage 2.5V VDDQ supply - compatible with 2.5V LVTTL and SSTL-2 I/O standards, reducing level-shifting complexity.
Burst Capability Linear or interleaved burst order - selectable via MODE pin strap, matching legacy ZBT™ system timing requirements.
Byte Write Control Four active-low BWx inputs (BWA–BWD) - enables independent 9-bit byte writes within 36-bit word, preserving partial-word integrity.
Power Management ZZ sleep mode and CE-based auto power-down - reduces standby current to 120 mA while retaining data integrity.

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), JEDEC-standard Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Synchronous Address Input 20-bit address bus sampled on CLK rising edge; A[1:0] feed internal 2-bit burst counter for sequential access.
BWA–BWD Synchronous Byte Write Select Active-low 9-bit mask signals qualified with WE; enable granular 9-bit writes without disturbing adjacent bytes.
CE1, CE2, CE3 Synchronous Chip Enable Three-level decode (CE1/CE3 active low, CE2 active high) allows simple depth expansion up to 8 devices without external logic.
CLK, CEN Clock & Clock Enable CLK qualified by CEN: deasserting CEN suspends clock recognition while preserving internal state and extending previous cycle.
DQ0–DQ35, DQPA–DQPD Bidirectional Data I/O 36 data + 4 parity lines; direction controlled by OE; automatically tri-stated during write data phase to prevent bus contention.
OE Asynchronous Output Enable Active-low; overrides synchronous logic to force output disable, but masked during write data windows and post-deselect recovery.
ADV/LD Advance/Load Control High = advance burst counter; Low = load new address; must be driven low after deselection to accept new address.
MODE Burst Order Strap Ground = linear burst; VDD/floating = interleaved burst - sets burst sequence without register programming.

Key Features

Feature Design Value
No Bus Latency™ Architecture Eliminates dead cycles between consecutive reads/writes - enables true back-to-back operation at full 133 MHz clock rate.
Internally Self-Timed Output Buffer Removes need for external OE timing control - output enable/disable is fully synchronized to internal clock domain.
Synchronous Self-Timed Writes On-chip write timing logic ensures reliable data capture without external write pulse width constraints or setup/hold dependencies.
JTAG Boundary Scan Support IEEE 1149.1-compliant TAP controller (TCK/TMS/TDI/TDO) - enables board-level testability and interconnect verification.
Automatic Power-Down Enters low-power ZZ sleep mode or CE-deselected state automatically - reduces standby current to 120 mA without software intervention.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed flow-through SRAM acting as ingress/egress packet buffer with zero-wait-state read/write turnaround.

Use Value: 6.5 ns clock-to-output and NoBL™ architecture ensure sub-8 ns round-trip latency for frame header lookups and rewrite operations.

Use Scenario: Buffering ATM cells or SONET/SDH payloads in OC-48/192 line interface modules.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing 36-bit-wide data path aligned to STS-192 framing clocks.

Use Value: Linear/interleaved burst modes match SONET pointer processing requirements; 2.5V VDDQ simplifies interface to FPGA transceivers.

Baseband Processing Cache Radar Signal Processing FIFO

Use Scenario: Temporary storage of decoded channel symbols in 4G/LTE baseband ASICs before FEC decoding.

IC Role / Device Role / Timing Role: Low-latency SRAM used as symbol cache between FFT engine and Viterbi decoder blocks.

Use Value: Registered inputs and 133 MHz operation sustain 1.2 Gbps symbol throughput without pipeline stalls or external handshaking.

Use Scenario: Real-time buffering of digitized IF samples in pulsed-Doppler radar receivers prior to FFT analysis.

IC Role / Device Role / Timing Role: Synchronous FIFO replacement with deterministic read/write timing for time-critical sample streaming.

Use Value: Automatic tri-state control during writes prevents bus contention in shared-memory radar processor architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PF 4M × 18 organization, 133 MHz, 2.5V core/I/O, but lacks MODE pin for burst order selection - fixed linear only. Requires redesign of burst address sequencing logic; not drop-in for interleaved-mode systems. Select when linear-burst-only operation suffices and FBGA footprint is acceptable (165-ball).
ISSI IS61WV102436BLL-133TQLI 1M × 36 organization, 133 MHz, 3.3V tolerant I/O (VDDQ = 3.3V), no JTAG support, different CE polarity (all active low). Requires level-shifting for 2.5V systems; lacks boundary scan for production test coverage. Choose for cost-sensitive industrial controllers where 3.3V I/O compatibility and absence of JTAG are acceptable trade-offs.

Compared with IDT72V2115L133PF and IS61WV102436BLL-133TQLI, CY7C1471BV25-133AXCT uniquely supports both linear and interleaved burst modes via hardware strap, retains full ZBT™ pin compatibility, and delivers guaranteed 6.5 ns access at 133 MHz in a Pb-free TQFP package with integrated JTAG testability.

Availability

CY7C1471BV25-133AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1471BV25-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with headquarters in San Jose, CA.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous SRAMs and ZBT™ SRAMs in bandwidth-constrained, low-latency applications demanding deterministic timing and seamless burst operation.

FAQ

What is the function of the MODE pin on CY7C1471BV25-133AXCT?

The MODE pin is a hardware strap that selects burst order: tied to ground for linear burst sequence, or to VDD/floating for interleaved burst. It is sampled at power-up and does not require register programming. This pin directly configures the internal 2-bit burst counter behavior and must remain static during operation to avoid undefined burst addressing.

How does the automatic tri-state control work during write cycles?

During the data portion of a write sequence, output drivers for DQ and DQP lines are synchronously forced into high-impedance state regardless of OE state - preventing bus contention. This occurs automatically on the same clock edge that latches write data, eliminating need for external OE timing coordination or hold-time margins.

Can CY7C1471BV25-133AXCT operate with mixed voltage supplies?

Yes: it requires 2.5V ±0.2V for VDDQ (I/O supply) and 2.3V–2.7V for VDD (core supply). These rails may be independently regulated. VDDQ must be powered before or simultaneously with VDD; reverse sequencing risks latch-up. The device does not support 3.3V I/O operation.

Is JTAG boundary scan supported in the TQFP package?

No: TDO, TCK, TMS, and TDI pins are not bonded out in the 100-pin TQFP package (CY7C1471BV25-133AXCT). JTAG functionality is available only in FBGA variants (e.g., CY7C1471BV25-133BAXI). For TQFP-based designs, boundary scan testing must rely on external tools or functional verification.

CY7C1471BV25-133AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1471BV25-133AXCT FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1471BV25-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1471BV25-133AXCT reliable?

The price and inventory of CY7C1471BV25-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471BV25-133AXCT is usually 5 days.

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Once your CY7C1471BV25-133AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1471BV25-133AXCT?

For technical support, including CY7C1471BV25-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471BV25-133AXCT requirements.

6.How does Aetrix verify that CY7C1471BV25-133AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1471BV25-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471BV25-133AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1471BV25-133AXCT?

All CY7C1471BV25-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471BV25-133AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1471BV25-133AXCT part is unused and in its original packaging.

Return procedure for CY7C1471BV25-133AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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