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Infineon Technologies CY7C1471BV25-133AXI
- Part No.:
- CY7C1471BV25-133AXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1471BV25-133AXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,043
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Product details
Overview
CY7C1471BV25-133AXI from Infineon Technologies (formerly Cypress) is a 72-Mbit (2 M × 36) synchronous NoBL™ Flow-Through SRAM with 133 MHz operation, 6.5 ns clock-to-output delay, 2.5 V I/O supply (VDDQ), and JEDEC-standard 100-pin TQFP package. It enables true back-to-back read/write cycles without wait states in high-throughput packet buffering and network switching applications.
For engineers reviewing the CY7C1471BV25-133AXI datasheet, CY7C1471BV25-133AXI pinout, CY7C1471BV25-133AXI application, or CY7C1471BV25-133AXI equivalent, key selection criteria include zero-wait-state burst capability, synchronous self-timed writes, registered address/data inputs, three chip enables for depth expansion, and ZZ sleep mode for low-power standby.
Technical Context
The device implements a synchronous flow-through architecture with all inputs registered on the rising edge of CLK and qualified by CEN. Its NoBL™ logic eliminates bus latency between consecutive operations via pipelined address, data, and control paths - enabling data transfer on every clock cycle.
Burst sequencing is controlled by ADV/LD and MODE pins, supporting both linear and interleaved orders using A[1:0] as counter seed. Internal self-timed write circuitry ensures deterministic write completion independent of external timing margins, while OE remains asynchronous for output tristate control during write data capture.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2 M × 36 or 1 M × 72 configuration) |
| Max Clock Frequency | 133 MHz - supports zero-wait-state bus operation at full speed |
| Access Time (tCDV) | 6.5 ns - defines maximum clock-to-valid-output delay for timing-critical read paths |
| VDDQ Supply | 2.5 V - powers I/O circuitry independently from core VDD, enabling mixed-voltage system interfacing |
| Standby Current (CMOS) | 120 mA - specifies active-low ZZ sleep mode current draw for power-sensitive systems |
| Burst Capability | Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic |
| Byte Write Control | Four independent BWx signals - allows selective 8-bit writes without read-modify-write overhead |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK, CEN | Synchronous clock input and enable | CLK sampled only when CEN = LOW; CEN deassertion extends previous cycle without deselecting device |
| A[1:0], ADV/LD, MODE | Burst address control | A[1:0] seeds internal 2-bit counter; ADV/LD toggles counter or loads new address; MODE selects linear/interleaved order |
| CE1, CE2, CE3 | Depth-expansion chip enables | CE1/CE3 active LOW, CE2 active HIGH - enables 3-signal decoding for multi-chip memory banks without external logic |
| BWA–BWD, WE | Byte-level write control | Four active-LOW byte masks + global WE - permits granular 8-bit writes to any subset of 36-bit word |
| DQs, DQPX | Bidirectional data/parity I/O | 36 data + 4 parity lines; direction controlled by OE; automatically tristated during write data capture regardless of OE state |
| ZZ | Asynchronous sleep control | Active HIGH places device in non-time-critical sleep with data retention; internal pull-down allows floating for normal operation |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Eliminates dead cycles between write and read operations - enables sustained 133 MT/s throughput in burst sequences |
| Registered synchronous interface | All address, data, and control inputs latched on CLK rising edge - simplifies timing closure in FPGA/ASIC designs |
| Internal self-timed write circuitry | Removes external write-strobe timing constraints - guarantees write completion within one clock period |
| Three independent chip enables | Supports seamless depth expansion up to 3× without address decoder logic - reduces BOM count and PCB area |
| ZZ sleep mode with data retention | Reduces standby power by >90% vs. active mode while preserving memory contents - critical for thermal-constrained telecom line cards |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO with deterministic 6.5 ns read latency. Use Value: Enables full-line-rate 10 GbE packet buffering with zero wait states across read-write transitions during header parsing and rewrite. |
Use Scenario: Shared memory resource in crossbar switch controllers for cell-based or packet-based fabric arbitration. IC Role / Device Role / Timing Role: Synchronous dual-port-like resource accessed by multiple scheduler engines via time-multiplexed bursts. Use Value: Supports concurrent 133 MHz read and write bursts across four byte lanes - matching fabric bandwidth requirements without pipeline stalls. |
| Telecom Line Card Control Memory | Radar Signal Processing Buffer |
|
Use Scenario: Storing real-time configuration tables and status registers for DSP co-processors in optical transport equipment. IC Role / Device Role / Timing Role: Low-latency, high-reliability SRAM interfaced to TI C66x or Xilinx Zynq processing subsystems. Use Value: ZZ sleep mode cuts idle power by 92% during link down events while retaining critical provisioning data - extending thermal margin. |
Use Scenario: Intermediate storage of digitized IF samples between ADC acquisition and FFT computation in phased-array radar receivers. IC Role / Device Role / Timing Role: Burst-capable memory staging buffer synchronized to ADC sampling clock and FFT engine start triggers. Use Value: Linear 4-word burst mode aligns with 16-bit sample packing - reducing address bus toggling and EMI emissions in RF-dense enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133PF | 36-bit, 133 MHz, 72-Mbit QDR-II+ SRAM; differential clock inputs; no ZZ sleep mode | Requires matched impedance routing and termination; higher power in standby (220 mA) | Preferred where differential clock integrity is enforced and QDR-II+ protocol compatibility is required |
| ISSI IS61WV102436B-133TQLI | 36-bit, 133 MHz, 72-Mbit NoBL™ SRAM; identical pinout and timing; lacks MODE pin for burst order selection (fixed linear) | Cannot support interleaved burst sequences needed in legacy Motorola/Freescale MPC74xx-based systems | Drop-in replacement where linear burst suffices and ZZ sleep is not required |
Compared with IDT72V2115L133PF and IS61WV102436B-133TQLI, CY7C1471BV25-133AXI uniquely combines ZZ sleep mode, selectable burst order, and JEDEC-compliant TQFP packaging - making it optimal for thermally constrained, multi-protocol telecom and defense platforms requiring flexible memory access patterns.
Availability
CY7C1471BV25-133AXI is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and telecom line card control memory requiring stable component supply, long-lifecycle support, and Pb-free compliance.
Supply support for CY7C1471BV25-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ and QDR™ SRAM families for infrastructure and industrial applications.
CY7C1471BV25 belongs to the Cypress NoBL™ synchronous SRAM product line, engineered for zero-wait-state, high-bandwidth data buffering in networking, telecommunications, and real-time signal processing systems.
FAQ
What is the function of the MODE pin on CY7C1471BV25-133AXI?
The MODE pin selects burst address sequence order: tied LOW for linear burst (0,1,2,3), tied HIGH or floating for interleaved burst (0,2,1,3). It is sampled at power-up and latched internally; changing MODE during operation has no effect until reset or power cycle. This pin enables compatibility with both PowerPC and x86-based memory controllers requiring different burst formats.
How does the ZZ sleep mode interact with chip enable signals?
ZZ sleep is asynchronous and overrides all chip enable states: when ZZ = HIGH, the device enters low-power sleep regardless of CE1/CE2/CE3 status, and retains data. CE signals remain functional upon exit - if CE1/CE2/CE3 were active before ZZ assertion, the device resumes operation immediately after ZZ returns LOW. No reinitialization or address reload is required.
Can CY7C1471BV25-133AXI perform byte writes to parity bits (DQPX)?
Yes - each DQPX line (DQPA–DQPD) corresponds directly to one byte lane of DQs (BYTE A–D), and is controlled by the same BWx signal. Asserting BWA LOW while keeping BWC/BWD HIGH performs an 8-bit write to BYTE A data and DQPA parity simultaneously. Parity is written synchronously with data and verified on subsequent reads if enabled in system logic.
Is the 100-pin TQFP package RoHS-compliant and lead-free?
Yes - the "X" suffix in CY7C1471BV25-133AXI denotes JEDEC-standard Pb-free (RoHS-compliant) packaging. The 100-pin TQFP uses matte tin lead finish, meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), and is qualified for reflow per IPC-7095 guidelines. No leaded or halogenated alternatives are offered for this part number.
CY7C1471BV25-133AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1471BV25-133AXI FAQ
1.How can I place an order for CY7C1471BV25-133AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1471BV25-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1471BV25-133AXI reliable?
The price and inventory of CY7C1471BV25-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471BV25-133AXI is usually 5 days.
3.What payment methods are accepted for CY7C1471BV25-133AXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1471BV25-133AXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1471BV25-133AXI?
CY7C1471BV25-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1471BV25-133AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1471BV25-133AXI?
For technical support, including CY7C1471BV25-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471BV25-133AXI requirements.
6.How does Aetrix verify that CY7C1471BV25-133AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1471BV25-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471BV25-133AXI meets industry standards.
7.What is the process for return or replacement of CY7C1471BV25-133AXI?
All CY7C1471BV25-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471BV25-133AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1471BV25-133AXI part is unused and in its original packaging.
Return procedure for CY7C1471BV25-133AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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