Infineon Technologies CY7C1471BV33-133AXC

Overview

CY7C1471BV33 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom equipment. It supports 133 MHz zero-wait-state bus operation, delivers 6.5 ns clock-to-output timing, and features synchronous byte write control via four BWx inputs and WE. Used in packet buffering and cache coherency logic where back-to-back read/write transitions are critical.

For engineers reviewing the CY7C1471BV33 datasheet, CY7C1471BV33 pinout, CY7C1471BV33 application, or CY7C1471BV33 equivalent, key selection criteria include its 100-pin TQFP package, synchronous self-timed writes, burst order configurability (linear/interleaved), IEEE 1149.1 JTAG support, and 3.3 V core / 2.5 V or 3.3 V I/O supply flexibility.

Technical Context

The device implements a No Bus Latency (NoBL™) architecture that eliminates dead cycles between consecutive read and write operations by synchronizing all inputs-including address, byte write enables, and control signals-to the rising edge of CLK, qualified by CEN. Internal burst counters and registered address/data paths ensure deterministic timing across all access types.

It supports both linear and interleaved burst orders selected via the MODE strap pin, and integrates synchronous self-timed write circuitry to eliminate external write pulse timing constraints. Output drivers are synchronously tri-stated during write data phases to prevent bus contention, independent of OE state.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm body size, with 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133BG and IS61WV102436BLL-133TQLI, the CY7C1471BV33 provides superior timing determinism via NoBL™ and integrated output control, lower standby power, and production-ready JTAG test infrastructure-critical for carrier-grade hardware validation.

Availability

CY7C1471BV33 is available at Aetrix Electronics and suitable for packet buffering, cache coherency directory storage, and telecom line card control memory requiring stable component supply across long-lifecycle deployments.

Supply support for CY7C1471BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1471BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, zero-wait-state memory subsystems in high-speed networking and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1471BV33?

The MODE pin selects burst address order: tied to GND for linear burst (0,1,2,3…), or to VDD/floating for interleaved burst (0,2,4,6…,1,3,5,7…). This setting is sampled at power-up and remains static during operation. It directly determines how the internal 2-bit burst counter increments address bits A[1:0], aligning with host processor cache line fetch behavior without software intervention.

Does CY7C1471BV33 require an external clock divider for 133 MHz operation?

No. The device operates natively at 133 MHz with a single-ended CMOS clock input; no external divider is needed. Its internal input registers sample all synchronous signals-including address, BWx, WE, and CE-on the rising edge of CLK, and the 6.5 ns tCDV specification is guaranteed under 133 MHz conditions with proper AC loading (30 pF, 1.0 V/ns slew rate) per the datasheet's switching characteristics table.

How does the ZZ sleep mode interact with data retention?

In ZZ mode (pin driven HIGH), the device enters a non-time-critical sleep state with full data retention. Core power (VDD) remains active, but internal clocks and I/O drivers are gated. Data integrity is preserved indefinitely as long as VDD ≥ 2.7 V and ambient temperature stays within –40°C to +85°C. Exiting ZZ requires only a falling edge on ZZ followed by one valid clock cycle before normal access resumes.

Can CY7C1471BV33 be used with 2.5 V-only I/O interfaces?

Yes. VDDQ may be independently supplied at 2.5 V while VDD remains at 3.3 V, enabling direct interface to 2.5 V logic families without level shifters. The datasheet specifies full AC/DC performance-including 6.5 ns tCDV and 133 MHz operation-under 2.5 V VDDQ conditions. All DQ and DQP pins are 2.5 V tolerant in this configuration, and byte write functionality remains fully operational.