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Infineon Technologies CY7C1471BV33-133AXCT

Part No.:
CY7C1471BV33-133AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1471BV33-133AXCT.pdf
Description:
IC SRAM 72MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,011

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Product details

Overview

CY7C1471BV33-133AXCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports 133 MHz zero-wait-state bus operation, delivers 6.5 ns clock-to-output delay, enables true back-to-back read/write transitions, and operates with 3.3 V core and 2.5/3.3 V I/O supply (VDDQ).

For engineers reviewing the CY7C1471BV33-133AXCT datasheet, CY7C1471BV33-133AXCT pinout, CY7C1471BV33-133AXCT application, or CY7C1471BV33-133AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous byte write control via BWA–BWD, ZZ sleep mode power management, JEDEC-compliant TQFP-100 packaging, and IEEE 1149.1 JTAG boundary scan support.

Technical Context

The device implements a synchronous, clocked interface with all inputs registered on the rising edge of CLK, qualified by CEN. Its NoBL™ architecture eliminates dead cycles between consecutive operations using internal self-timed output buffer control and registered ADV/LD logic for burst address generation.

It supports two burst modes (linear or interleaved) selected by the MODE strap pin, features three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank expansion, and uses asynchronous OE with automatic tri-state during write data windows to prevent bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling large burst buffers for packet assembly in switching ASICs.
Max Clock Frequency 133 MHz - supports sustained 133 MT/s throughput without wait states in synchronous bus systems.
Access Time (tCDV) 6.5 ns - defines minimum clock-to-valid-output delay, critical for timing closure in high-speed FPGA interfaces.
VDDQ Supply Range 2.5 V or 3.3 V - allows interoperability with mixed-voltage SoC/FPGA I/O banks while maintaining signal integrity.
Burst Capability Linear or interleaved 4-word burst - matches industry-standard cache line sizes and DMA engine requirements.
Power-Down Mode ZZ sleep mode reduces standby current to ≤120 mA - preserves data while cutting dynamic power during idle intervals.
JTAG Support IEEE 1149.1 compliant - enables board-level testability and in-system verification without external test fixtures.

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference; qualified by CEN to gate all register updates.
CEN Clock enable Active LOW - suspends clock recognition without deselecting device, extending previous cycle for timing margin.
ADV/LD Address advance/load control Drives internal burst counter when HIGH; loads new address when LOW - essential for burst sequence control.
BWA–BWD Byte write select inputs Four active-LOW signals enabling independent 9-bit byte writes within 36-bit word - supports partial-word updates.
CE1, CE2, CE3 Chip enable group Three synchronized enables (CE1/CE3 active LOW, CE2 active HIGH) allow seamless depth expansion across multiple devices.
OE Asynchronous output enable Active LOW - controls I/O direction but is masked during write data phase to auto-tri-state outputs and avoid contention.
ZZ Asynchronous sleep control Active HIGH - places device in low-power retention mode with data intact; internal pull-down ensures safe default state.
MODE Burst order configuration Strap pin - GND = linear burst, VDD/floating = interleaved burst - sets addressing pattern for cache coherency alignment.

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Eliminates dead cycles between write and read operations, enabling continuous 133 MT/s data flow without pipeline stalls.
Synchronous self-timed writes Removes external write pulse timing constraints - internal logic manages write duration, simplifying controller design.
Registered inputs with clock qualification All address, control, and data inputs pass through flip-flops on CLK rise, ensuring deterministic setup/hold timing at system level.
Byte-selectable 36-bit I/O Four independent 9-bit byte lanes (via BWA–BWD) allow granular memory updates without full-word overwrites or masking logic.
Flexible I/O voltage (VDDQ) Supports 2.5 V or 3.3 V operation - matches legacy or modern FPGA I/O standards without level-shifting components.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with cut-through latency requirements.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between ingress parser and egress scheduler, operating synchronously with 133 MHz switch fabric clock.

Use Value: NoBL™ architecture enables uninterrupted frame handoff across read/write boundaries, reducing average packet latency by up to 30% versus ZBT SRAMs.

Use Scenario: Frame reassembly and jitter buffering in OC-192 SONET/SDH line interface modules.

IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly with SerDes PHY and DSP subsystems, supporting 4-word interleaved bursts aligned to ATM cell boundaries.

Use Value: 6.5 ns tCDV and registered inputs meet tight setup/hold margins of multi-Gbps serial link controllers without added timing buffers.

Baseband Processing Cache FPGA Co-Processor Memory

Use Scenario: Temporary storage for channel estimation coefficients and FFT output in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by dual-core DSPs via shared synchronous bus, configured in linear burst mode for sequential coefficient access.

Use Value: ZZ sleep mode cuts standby power by >70% during radio silence periods while preserving coefficient integrity across wake cycles.

Use Scenario: Off-chip instruction/data memory for Xilinx Kintex Ultrascale+ FPGA-based real-time control engines.

IC Role / Device Role / Timing Role: Burst-capable SRAM mapped into FPGA AXI4-Stream interface, using ADV/LD and MODE pins to match FPGA burst length and address increment logic.

Use Value: Pin-compatible replacement for ZBT SRAMs allows drop-in migration while improving sustained bandwidth by eliminating inter-burst dead cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2135L133PFI Same 2M × 36 density and 133 MHz speed, but uses ZBT™ architecture with OE-dependent output timing and no MODE pin for burst order selection. Lacks NoBL™ zero-dead-cycle operation - requires OE assertion management and exhibits 1-cycle gap between write-read transitions. Select when legacy ZBT compatibility or existing PCB layout reuse is required; verify OE timing margins in burst-heavy workloads.
ISSI IS61WV102436BLL-133TQLI 133 MHz 2M × 36 SRAM with NoBL™-like flow-through behavior, but no ZZ sleep mode and only 2.5 V VDDQ support (no 3.3 V option). Higher standby current (180 mA vs. 120 mA) and lacks JTAG boundary scan - limits use in power-constrained or high-reliability test environments. Choose for cost-sensitive designs where sleep mode and JTAG are non-critical, and I/O voltage is fixed at 2.5 V.

Compared with IDT72V2135L133PFI and IS61WV102436BLL-133TQLI, CY7C1471BV33-133AXCT uniquely combines NoBL™ zero-latency operation, dual-voltage VDDQ, hardware-configurable burst order, and integrated JTAG - making it optimal for next-generation telecom and packet-processing systems demanding both performance and testability.

Availability

CY7C1471BV33-133AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and FPGA co-processor memory applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1471BV33-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1471BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for systems requiring deterministic, high-throughput memory access with minimal latency variation - especially in packet-switching, baseband, and real-time control infrastructure.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst addressing order: tied to GND for linear burst, tied to VDD or left floating for interleaved burst. It is a static strap input sampled at power-up and does not require dynamic control. Leaving it unconnected defaults to interleaved mode due to internal weak pull-up; incorrect strapping causes misaligned burst reads/writes and data corruption.

How does the ZZ sleep mode interact with data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention and reduced current draw (≤120 mA). Wake-up occurs synchronously on the first valid CLK edge after ZZ returns LOW, with no additional latency beyond standard access time - no initialization sequence or delay is required.

Can CE2 be used as an active-LOW enable like CE1 and CE3?

No - CE2 is defined as active HIGH per the datasheet and pin definition table. Using it as active LOW violates timing and functional specifications. Correct operation requires CE1 and CE3 asserted LOW while CE2 is asserted HIGH to enable the device; reversing CE2 polarity may cause unpredictable chip select behavior or failure to respond to commands.

Is the TQFP-100 package RoHS-compliant and lead-free?

Yes - the "XCT" suffix in CY7C1471BV33-133AXCT explicitly denotes JEDEC-standard Pb-free (RoHS-compliant) 100-pin TQFP packaging. The device meets IPC/JEDEC J-STD-609A Class 1 marking requirements and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

CY7C1471BV33-133AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1471BV33-133AXCT FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1471BV33-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1471BV33-133AXCT reliable?

The price and inventory of CY7C1471BV33-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471BV33-133AXCT is usually 5 days.

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Once your CY7C1471BV33-133AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1471BV33-133AXCT?

For technical support, including CY7C1471BV33-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471BV33-133AXCT requirements.

6.How does Aetrix verify that CY7C1471BV33-133AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1471BV33-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471BV33-133AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1471BV33-133AXCT?

All CY7C1471BV33-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471BV33-133AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1471BV33-133AXCT part is unused and in its original packaging.

Return procedure for CY7C1471BV33-133AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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