Infineon Technologies CY7C1471BV33-133BZI
- Part No.:
- CY7C1471BV33-133BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1471BV33-133BZI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1471BV33-133BZI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports 133 MHz zero-wait-state operation, delivers 6.5 ns clock-to-output delay, features synchronous byte write control via four BWx pins, and operates with 3.3 V core and 2.5/3.3 V I/O supply (VDDQ).
For engineers reviewing the CY7C1471BV33-133BZI datasheet, CY7C1471BV33-133BZI pinout, CY7C1471BV33-133BZI application, or CY7C1471BV33-133BZI equivalent, this page provides verified timing behavior, JEDEC-compliant TQFP-100 package mapping, burst mode configuration (linear/interleaved), ZZ sleep mode control, and functional alternatives for back-to-back read/write systems requiring deterministic latency.
Technical Context
The device implements a fully synchronous, rising-edge-triggered interface with registered address, control, and data inputs. All operations-including single/burst reads, self-timed writes, and chip enable decoding-are synchronized to CLK qualified by CEN, enabling precise pipeline control in high-speed bus architectures.
NoBL™ logic eliminates bus dead cycles between consecutive read and write operations by decoupling output enable timing from OE and using internal self-timed write buffers. The 2M × 36 organization supports 36-bit parallel data paths, while ADV/LD and MODE pins configure burst addressing (linear or interleaved) and address counter behavior.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 bits), providing 72 million bits of fast, low-latency storage for packet buffering or cache extension. |
| Max Clock Frequency | 133 MHz - enables sustained 133 MT/s throughput with no wait states in back-to-back read/write sequences. |
| Access Time (tCDV) | 6.5 ns - guaranteed maximum clock-to-output delay at 133 MHz, critical for timing closure in FPGA- or ASIC-connected memory interfaces. |
| VDDQ Supply Range | 2.5 V or 3.3 V - selectable I/O voltage allows interoperability with both 2.5 V and 3.3 V logic families without level shifters. |
| Burst Capability | Linear or interleaved 4-word burst - configured via MODE pin strap, matching standard processor or DMA controller burst patterns. |
| Power-Down Mode | ZZ sleep mode reduces standby current to ≤120 mA CMOS - preserves data integrity while cutting dynamic power during idle periods. |
| JEDEC Package | 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant - compatible with standard SMT reflow profiles and automated optical inspection. |
Pinout & Package
Package: 100-pin thin quad flat pack (TQFP), 14 mm × 20 mm × 1.4 mm body, JEDEC-standard footprint, Pb-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK, CEN | Synchronous clock input and enable | CLK sampled on rising edge only when CEN = LOW; deasserting CEN extends previous cycle without deselection. |
| A[0:1], ADV/LD | Address and burst counter control | A[1:0] feeds 2-bit burst counter; ADV/LD = HIGH advances counter, LOW loads new address - required after CE deselect. |
| BWA–BWD, WE | Byte write selection and write strobe | Four active-LOW byte enables + WE define 36-bit write granularity; all sampled synchronously on CLK rise. |
| CE1, CE2, CE3 | Three-level chip enable decode | CE1/CE3 active LOW, CE2 active HIGH - enables depth expansion up to 8 devices without external logic. |
| DQ[0:35], DQP[0:3] | Bidirectional data and parity I/O | 36 data + 4 parity lines; direction controlled by OE; automatically tri-stated during write data phase regardless of OE state. |
| MODE, ZZ, OE | Burst order, sleep control, output enable | MODE strap selects linear/interleaved burst; ZZ = HIGH enters non-critical sleep; OE is asynchronous but masked during writes. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) architecture | Eliminates dead cycles between consecutive read/write operations - enables true back-to-back transfers at full 133 MHz rate. |
| Synchronous self-timed writes | On-chip write timing eliminates external write pulse width constraints - simplifies timing design and improves reliability. |
| Registered inputs with clock qualification | All address, control, and data inputs pass through flip-flops triggered by CLK/CEN - ensures deterministic setup/hold across temperature/voltage. |
| Flexible I/O voltage (VDDQ) | Supports 2.5 V or 3.3 V I/O operation - allows direct interfacing with mixed-voltage SoCs, FPGAs, or ASICs without level translation. |
| JTAG boundary scan (IEEE 1149.1) | Full scan support with TCK/TMS/TDI/TDO - enables production testability and board-level debug without additional test points. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in real time within switch fabric or router line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC layer and switching engine - absorbs bursty traffic while maintaining deterministic read/write turnaround. Use Value: 6.5 ns tCDV and NoBL™ ensure sub-8 ns effective access per word, enabling line-rate 10G+ packet processing without stall cycles. |
Use Scenario: Frame assembly/disassembly and header modification in carrier-grade DSLAMs or OLTs. IC Role / Device Role / Timing Role: Dual-port-like synchronous SRAM used as temporary holding register for ATM cell reassembly or GPON downstream scheduling. Use Value: 133 MHz operation with burst capability matches OC-48/STM-16 data rates; ZZ sleep mode reduces power during idle frame intervals. |
| FPGA-Based Protocol Acceleration | Industrial Real-Time Controller Cache |
|
Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection tasks from host CPU using FPGA co-processing. IC Role / Device Role / Timing Role: Local scratchpad memory tightly coupled to FPGA fabric - accessed via AXI or custom parallel bus with minimal handshake overhead. Use Value: Registered inputs and predictable 6.5 ns output align cleanly with FPGA timing models; TQFP package supports high-density routing on compact PCBs. |
Use Scenario: Deterministic motion control loop buffering in CNC or robotics drives where jitter must be <50 ns. IC Role / Device Role / Timing Role: Low-jitter memory for storing interpolated trajectory points and servo feedback history - accessed synchronously with motion engine clock. Use Value: Zero-wait-state 133 MHz operation guarantees fixed 7.5 ns cycle time; ZZ mode maintains data integrity during emergency stop transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133BG | Same 2M × 36 density, 133 MHz, TQFP-100, but uses ZBT™ architecture (not NoBL™); requires OE management and has 7.0 ns tCDV. | Lacks automatic output tri-state during writes; needs external OE timing control - increases FPGA logic burden in burst-heavy designs. | Prefer when legacy ZBT compatibility is required or when OE-driven output control is already implemented in system design. |
| ISSI IS61WV204836BLL-133TQLI | 2M × 36, 133 MHz, TQFP-100, NoBL-compatible timing but no JTAG; max tCDV = 7.0 ns; supports only 3.3 V VDDQ (no 2.5 V option). | Missing IEEE 1149.1 scan chain - limits test coverage in high-reliability industrial boards; no dual-voltage I/O flexibility. | Prefer for cost-sensitive, non-JTAG applications where 3.3 V-only I/O suffices and 0.5 ns timing margin is acceptable. |
Compared with IDT72V2115L133BG and IS61WV204836BLL-133TQLI, CY7C1471BV33-133BZI uniquely combines NoBL™ latency elimination, 2.5/3.3 V VDDQ support, and integrated JTAG - making it optimal for new designs demanding lowest jitter, mixed-voltage interoperability, and production testability.
Availability
CY7C1471BV33-133BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and FPGA-based protocol acceleration requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY7C1471BV33-133BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
CY7C1471BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in packet-switched infrastructure where deterministic timing and burst efficiency are mandatory.
FAQ
What is the function of the MODE pin on CY7C1471BV33-133BZI?
The MODE pin is a static strap input that configures burst addressing order: tied to GND it selects linear burst sequence (0,1,2,3), while tied to VDD or left floating it selects interleaved burst (0,2,1,3). This setting is sampled at power-up and remains fixed until reset; it directly maps to standard processor burst protocols and requires no runtime control.
How does the ZZ pin behave during sleep mode, and what happens to data retention?
When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with all outputs tri-stated and internal clocks gated; data is retained indefinitely as long as VDD ≥ 2.0 V and ambient temperature stays within –40°C to +85°C. The internal pull-down ensures safe LOW default if left unconnected, preventing unintended sleep entry.
Can CY7C1471BV33-133BZI operate with 2.5 V VDDQ while using 3.3 V VDD?
Yes - VDD (core supply) must be 3.3 V ±0.3 V, while VDDQ (I/O supply) is independently configurable for either 2.5 V ±0.2 V or 3.3 V ±0.3 V. This dual-voltage capability allows direct interfacing with 2.5 V FPGAs or 3.3 V ASICs without external level shifters, and both supplies must be ramped monotonically during power-up.
Is the TQFP-100 package of CY7C1471BV33-133BZI pin-compatible with CY7C1473BV33-133BZI?
No - although both use 100-pin TQFP, CY7C1471BV33 (2M × 36) and CY7C1473BV33 (4M × 18) have different pinouts: the former allocates pins for 36 data lines (DQA–DQD + DQPA–DQPD), while the latter repurposes many DQx pins as NC or removes parity lines entirely. Interchangeability requires redesign of PCB layout and signal routing.
CY7C1471BV33-133BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1471BV33-133BZI FAQ
1.How can I place an order for CY7C1471BV33-133BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1471BV33-133BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1471BV33-133BZI reliable?
The price and inventory of CY7C1471BV33-133BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471BV33-133BZI is usually 5 days.
3.What payment methods are accepted for CY7C1471BV33-133BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1471BV33-133BZI transactions.
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CY7C1471BV33-133BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1471BV33-133BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1471BV33-133BZI?
For technical support, including CY7C1471BV33-133BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471BV33-133BZI requirements.
6.How does Aetrix verify that CY7C1471BV33-133BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1471BV33-133BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471BV33-133BZI meets industry standards.
7.What is the process for return or replacement of CY7C1471BV33-133BZI?
All CY7C1471BV33-133BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471BV33-133BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1471BV33-133BZI part is unused and in its original packaging.
Return procedure for CY7C1471BV33-133BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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