Infineon Technologies CY7C1471V25-133AXCT

Overview

CY7C1471V25-133AXCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports 133 MHz zero-wait-state operation, delivers 6.5 ns clock-to-output delay, uses 2.5V VDDQ I/O supply, and features registered inputs, byte write capability, and three chip enables for depth expansion.

For engineers reviewing the CY7C1471V25-133AXCT datasheet, CY7C1471V25-133AXCT pinout, CY7C1471V25-133AXCT application, or CY7C1471V25-133AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, ZZ sleep mode behavior, and TQFP-100 pin compatibility with ZBT™-class systems.

Technical Context

The device implements a synchronous flow-through architecture with on-chip burst counter, advance/load (ADV/LD) control, and internally self-timed output buffers-eliminating external OE timing constraints. All address, data, and control inputs are registered on the rising edge of CLK, qualified by CEN, and synchronized to support true back-to-back read/write transitions without dead cycles.

It integrates eight byte write enables (BWA–BWD for 2M×36 config), asynchronous ZZ sleep mode with internal pull-down, and JTAG boundary scan (TDO/TCK/TDI/TMS) compliant with IEEE 1149.1. MODE pin selects linear or interleaved burst order, and CE1/CE2/CE3 enable hierarchical bank decoding in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free compliant, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2135L133PF and IS61WV204836B-133TQLI, CY7C1471V25-133AXCT uniquely combines 2.5V VDDQ, ZZ sleep, and ADV/LD-driven burst-making it optimal for thermally constrained, burst-intensive telecom and networking buffers where power-aware timing determinism is critical.

Availability

CY7C1471V25-133AXCT is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line card memory in telecom routers, and baseband processing in 4G LTE eNodeB requiring stable component supply across extended product lifecycles.

Supply support for CY7C1471V25-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.

This device belongs to Cypress's NoBL™ SRAM product line-engineered specifically to eliminate bus dead cycles in high-speed packet-processing and real-time signal-path applications where deterministic latency and burst efficiency are mandatory.

FAQ

What is the function of the MODE pin on CY7C1471V25-133AXCT?

The MODE pin is a static strap input that selects burst order: tied to GND for linear burst (sequential address increment), or to VDD/floating for interleaved burst (address toggles bit A1). This setting is sampled at power-up and cannot be changed dynamically during operation. It directly determines how the internal burst counter advances during ADV/LD HIGH sequences.

How does the ZZ pin interact with CE and CEN during low-power operation?

ZZ is asynchronous and overrides CE/CEN: asserting ZZ HIGH forces immediate entry into sleep mode regardless of CE or CEN state, preserving data with minimal current draw. When ZZ returns LOW, the device resumes normal operation after one CLK cycle-no initialization sequence is required. CE and CEN remain functional only when ZZ is LOW.

Can CY7C1471V25-133AXCT operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes-VDD is specified at 2.5 V ±0.2 V for core logic, and VDDQ is independently rated at 2.5 V ±0.2 V for I/O drivers. The device requires both supplies to be within specification simultaneously; it does not support split-rail operation (e.g., 1.8 V VDD with 2.5 V VDDQ). Decoupling must be applied separately to each supply rail.

Is JTAG boundary scan supported in the TQFP package of CY7C1471V25-133AXCT?

No-JTAG pins (TDO, TCK, TDI, TMS) are only present in the 165-ball FBGA package variant (e.g., CY7C1471BV25-133BAXI). The 100-pin TQFP package (CY7C1471V25-133AXCT) omits TDO and all other JTAG signals; boundary scan testing is not available in this package option.