Infineon Technologies CY7C1471V33-133AXC

Overview

CY7C1471V33-133AXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-bandwidth memory subsystems. It operates at 133 MHz with 6.5 ns clock-to-output delay, supports linear/interleaved burst modes, and features registered inputs, byte write capability, and three chip enables for depth expansion - deployed in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1471V33-133AXC datasheet, CY7C1471V33-133AXC pinout, CY7C1471V33-133AXC application, or CY7C1471V33-133AXC equivalent, key selection criteria include guaranteed 133-MHz synchronous timing, NoBL™-enabled true back-to-back throughput, JEDEC-compliant 100-pin TQFP packaging, and ZZ-mode sleep control with data retention.

Technical Context

The CY7C1471V33-133AXC implements a fully synchronous, pipelined interface where all inputs (address, WE, BWX, CE, ADV/LD, CEN) are registered on the rising edge of CLK. Its NoBL™ architecture eliminates bus latency by enabling immediate read-after-write transitions without dead cycles, supported by internal self-timed write circuitry and synchronously tri-stated outputs during write data capture.

Burst operation is controlled by a two-bit on-chip counter driven by A[1:0] and ADV/LD, with burst order (linear or interleaved) selected via the MODE strap pin. Chip select logic uses three synchronous enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) to support banked memory expansion while maintaining full pipeline alignment across banks.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected). Pin 64 (ZZ) requires external connection to ground per errata.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PF and IS61WV102436BLL-133TQLI, the CY7C1471V33-133AXC delivers guaranteed zero-wait-state operation, autonomous output control, and flexible burst configuration - making it optimal for latency-critical telecom and defense signal processing where deterministic timing is non-negotiable.

Availability

CY7C1471V33-133AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY7C1471V33-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1471V33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed memory subsystems - targeting applications demanding deterministic, zero-wait-state throughput in packet infrastructure and real-time signal processing.

FAQ

What is the purpose of the MODE pin, and how must it be configured?

The MODE pin selects burst address sequence: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). It is sampled at power-up and latched internally; no dynamic reconfiguration is supported. Leaving MODE floating defaults to interleaved mode due to internal pull-up, but explicit VDD tie is recommended for robustness in noisy environments.

Why must the ZZ pin (Pin 64) be externally grounded?

Per documented errata (Rev. *V, page 19), Pin 64 (ZZ) exhibits unreliable sleep entry behavior unless externally pulled to GND. The internal pull-down is insufficient for guaranteed activation. Failure to ground ZZ may result in failure to enter low-power mode or unintended wakeups - grounding ensures deterministic ZZ-mode entry and data retention during sleep.

How does the CY7C1471V33-133AXC handle byte write operations without corrupting adjacent bytes?

Byte write is controlled by four independent BWX signals (BWA–BWD), each gating one 8-bit lane of the 36-bit data path. When WE is asserted LOW and a specific BWX is LOW, only the corresponding DQ/DQP byte is written; unselected bytes retain their prior values. This is enforced by on-chip write mask logic - no read-modify-write sequence is needed, preserving atomicity and timing integrity.

Can CE2 be used as an active-LOW enable like CE1 and CE3?

No - CE2 is defined as active HIGH per datasheet pin definition (page 5) and truth table (page 8). Using CE2 as active LOW violates timing and functional specifications and may cause unpredictable chip select behavior. The three-enable scheme requires CE1 and CE3 LOW plus CE2 HIGH for device selection; inversion would break the intended decode logic and risk partial enable conditions.