Infineon Technologies CY7C1471V33-133AXCT
- Part No.:
- CY7C1471V33-133AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1471V33-133AXCT.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,455
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Product details
Overview
CY7C1471V33-133AXCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-speed memory subsystems. It operates at 133 MHz, delivers 6.5 ns clock-to-output delay, supports linear/interleaved burst modes, and features byte-write capability with three chip enables (CE1–CE3) for depth expansion in networking and telecom line cards.
For engineers reviewing the CY7C1471V33-133AXCT datasheet, CY7C1471V33-133AXCT pinout, CY7C1471V33-133AXCT application, or CY7C1471V33-133AXCT equivalent, key selection criteria include synchronous self-timed write timing, ZZ sleep mode power control, registered input timing compliance, and JEDEC-standard 100-pin TQFP package compatibility with ZBT™-based systems.
Technical Context
The device implements a fully pipelined synchronous interface with rising-edge clock sampling of all control and address inputs. Its NoBL™ architecture eliminates bus latency by enabling consecutive read/write cycles without dead cycles - data transfers occur on every clock edge, supported by internal burst counters and ADV/LD-controlled address sequencing.
All writes are executed via on-chip synchronous self-timed circuitry, eliminating external write-strobe coordination. Output drivers are synchronously tri-stated during write data capture, and OE remains masked during write sequences to prevent bus contention - ensuring deterministic signal integrity in high-frequency memory buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 bits), enabling large burst buffers in packet-forwarding engines. |
| Max Clock Frequency | 133 MHz - supports sustained 133 MT/s throughput with no wait states. |
| Access Time (tCDV) | 6.5 ns - defines minimum clock-to-output delay for timing-critical read paths. |
| I/O Voltage (VDDQ) | 3.3 V/2.5 V - allows interoperability with mixed-voltage ASIC/FPGA I/O banks. |
| Burst Mode | Linear or interleaved - selected via MODE pin strap; matches legacy ZBT™ system addressing. |
| Power Management | ZZ sleep mode (asynchronous, active-HIGH) reduces standby current to ≤120 mA CMOS level. |
| Write Control | Synchronous self-timed writes with BWA–BWD + WE - eliminates external write pulse generation logic. |
Pinout & Package
Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK, CEN | Synchronous clock input and enable | CEN masks CLK when HIGH; enables cycle extension without deselection. |
| A[1:0], ADV/LD | Burst address counter control | A[1:0] seed burst sequence; ADV/LD loads new address or increments counter. |
| CE1, CE2, CE3 | Chip select logic | Three-level synchronous enable for bank/depth expansion without glue logic. |
| BWA–BWD, WE | Byte-write control | Four independent byte enables + global WE allow partial-word writes without read-modify-write overhead. |
| DQs, DQPX | 36-bit data + 4-bit parity I/O | Common I/O with automatic tri-state during write data capture; OE masked for safety. |
| ZZ | Asynchronous sleep control | Active-HIGH entry into low-power mode; requires external GND tie per errata (Pin 64). |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ architecture | Enables true back-to-back read/write transitions with zero dead cycles - critical for packet buffering in switch fabric controllers. |
| Registered synchronous inputs | All control/address signals sampled on CLK rising edge - simplifies timing closure in FPGA-attached memory interfaces. |
| Internal burst counter | Reduces address bus traffic by up to 75% for 4-word bursts - lowers PCB routing complexity and signal integrity risk. |
| Automatic output tri-state | Eliminates need for OE timing coordination during writes - prevents bus contention without external logic. |
| MODE pin strap selection | Hardware-selectable linear vs. interleaved burst order - ensures drop-in compatibility with both ZBT™ and DDR-style systems. |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: High-speed packet buffering in OC-192/STM-64 line interface units requiring deterministic latency. IC Role / Device Role / Timing Role: Primary burst SRAM for ingress/egress FIFOs, synchronized to 133 MHz system clock with zero wait states. Use Value: 6.5 ns tCDV and NoBL™ architecture ensure sub-10 ns read turnaround - meeting strict jitter budgets for SONET/SDH framing. |
Use Scenario: Temporary storage of fragmented IP packets in Layer 3 switches before reassembly or forwarding. IC Role / Device Role / Timing Role: Flow-through SRAM acting as deep buffer between ingress parser and egress scheduler blocks. Use Value: Byte-write capability enables efficient partial updates of packet headers without full-word read-modify-write cycles. |
| Radar Signal Processing | Industrial Motion Controllers |
|
Use Scenario: Real-time storage of digitized RF samples in phased-array radar front-ends operating at 100+ MSPS. IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly to ADC output and DSP input buses. Use Value: ZZ sleep mode reduces idle power by >80% during beam-scan gaps - extending thermal margin in sealed enclosures. |
Use Scenario: Position command buffering in multi-axis CNC controllers where motion profiles require precise timing alignment. IC Role / Device Role / Timing Role: Deterministic-access SRAM holding interpolated trajectory points for servo loop execution. Use Value: Registered inputs and 133 MHz operation guarantee ±0.5 ns setup/hold margin across temperature - critical for sub-microsecond jitter tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2135L133BG | Same density (2M × 36), but uses QDR-II architecture with separate read/write ports - requires dual-clock domain handling. | Preferred in systems needing concurrent read/write access (e.g., dual-port FIFO emulation), not pure flow-through use cases. | Select only if architecture mandates true dual-port behavior; otherwise, CY7C1471V33-133AXCT offers simpler timing and lower pin count. |
| ISSI IS61WV102436BLL-133TQLI | Drop-in pin-compatible replacement, but lacks ZZ sleep mode and has 7.5 ns tCDV - 1 ns slower than CY7C1471V33-133AXCT. | Suitable for cost-sensitive industrial designs where 1 ns latency margin is acceptable and sleep mode is unused. | Choose for BOM rationalization where legacy ZBT™ compatibility is required but ultra-low power is not critical. |
Compared with IDT72V2135L133BG and IS61WV102436BLL-133TQLI, CY7C1471V33-133AXCT uniquely combines NoBL™ zero-latency flow-through operation, hardware-configurable burst order, and integrated ZZ sleep - making it optimal for latency-constrained, power-aware telecom and radar subsystems.
Availability
CY7C1471V33-133AXCT is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, and radar signal processing systems requiring stable component supply, long-lifecycle support, and guaranteed Pb-free compliance.
Supply support for CY7C1471V33-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
CY7C1471V33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT™ devices in bandwidth-intensive applications demanding deterministic, zero-wait-state memory access - particularly in infrastructure equipment with tight thermal and timing constraints.
FAQ
What is the function of the MODE pin on CY7C1471V33-133AXCT?
The MODE pin is a static strap input that selects burst address sequence order: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,1,3). It is sampled only at power-up or reset - not dynamically changeable during operation - and directly configures the internal 2-bit burst counter logic without software intervention.
How does the ZZ pin behave, and what is the errata requirement?
The ZZ pin is an asynchronous active-HIGH sleep control input. Per Errata on page 19 of Rev. *V datasheet, Pin 64 (ZZ) must be externally connected to ground during normal operation - it is not left floating due to internal pull-down limitations. Failure to ground ZZ may cause unpredictable sleep entry/exit and increased standby current beyond 120 mA specification.
Can CY7C1471V33-133AXCT operate with 2.5 V I/O while maintaining 3.3 V core voltage?
Yes - VDDQ (I/O supply) is independently rated for 2.5 V or 3.3 V operation, while VDD (core supply) remains fixed at 3.3 V. This allows direct interfacing with 2.5 V FPGA I/O banks without level shifters, provided VDDQ = 2.5 V ±0.2 V and all AC timing parameters (e.g., tCDV = 6.5 ns) are verified under those conditions per Electrical Characteristics table.
Is CY7C1471V33-133AXCT pin-compatible with ZBT™ SRAMs like CY7C1371V33?
Yes - it is explicitly designed as pin- and functionally compatible with ZBT™ devices including CY7C1371V33. Identical 100-pin TQFP footprint, matching signal names (CE1/CE2/CE3, ADV/LD, BWx, etc.), and identical burst timing behavior enable drop-in replacement - though NoBL™ eliminates the need for OE control in most configurations due to self-timed output enable.
CY7C1471V33-133AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1471V33-133AXCT FAQ
1.How can I place an order for CY7C1471V33-133AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1471V33-133AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1471V33-133AXCT reliable?
The price and inventory of CY7C1471V33-133AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1471V33-133AXCT is usually 5 days.
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Once your CY7C1471V33-133AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1471V33-133AXCT?
For technical support, including CY7C1471V33-133AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1471V33-133AXCT requirements.
6.How does Aetrix verify that CY7C1471V33-133AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1471V33-133AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1471V33-133AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1471V33-133AXCT?
All CY7C1471V33-133AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1471V33-133AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1471V33-133AXCT part is unused and in its original packaging.
Return procedure for CY7C1471V33-133AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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