Infineon Technologies CY7C1472BV25-200AXC

Overview

CY7C1472BV25-200AXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports linear/interleaved burst modes, features synchronous self-timed writes, and uses a single 2.5 V supply with separate 2.5 V I/O rail (VDDQ).

For engineers reviewing the CY7C1472BV25-200AXC datasheet, CY7C1472BV25-200AXC pinout, CY7C1472BV25-200AXC application, or CY7C1472BV25-200AXC equivalent, this page delivers verified timing parameters, JEDEC-standard 100-pin TQFP package mapping, byte-write control logic, JTAG boundary-scan support, and functional alternatives for back-to-back read/write systems requiring deterministic latency.

Technical Context

The device implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs are driven from output registers synchronized to CLK. Burst addressing is controlled by ADV/LD and MODE pins, enabling linear or interleaved sequences without external counters.

NoBL™ logic eliminates bus latency by enabling true back-to-back reads/writes - each clock cycle transfers valid data without inter-cycle gaps. Internal self-timed write circuitry ensures consistent tWR (5.0 ns) and eliminates external write-strobe timing constraints, while synchronous CE1/CE2/CE3 decoding enables seamless depth expansion in multi-chip configurations.

Key Specifications

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch, thermally enhanced for sustained 200 MHz operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L10PF and IS61WV102418BLL-10MLI, CY7C1472BV25-200AXC uniquely balances 72-Mbit density, 200 MHz deterministic throughput, and MODE-configurable burst sequencing - making it optimal for next-generation packet-processing and real-time control systems demanding both capacity and cycle-accurate timing.

Availability

CY7C1472BV25-200AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and industrial motion controller FIFOs requiring stable component supply across extended production lifecycles.

Supply support for CY7C1472BV25-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and timing precision.

CY7C1472BV25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-wait-state, back-to-back memory transactions in high-speed networking and real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1472BV25-200AXC?

The MODE pin is a static configuration input that selects burst addressing order: tied HIGH enables interleaved burst (e.g., for cache line access), pulled LOW enables linear burst (e.g., for DMA transfers). It must be held stable during operation and defaults to HIGH if left floating, ensuring predictable boot-time behavior without external pull-up components.

Does CY7C1472BV25-200AXC support asynchronous output enable?

Yes - the OE pin is asynchronous and active LOW, allowing immediate tri-state control of DQ pins independent of CLK. However, OE is masked during the data portion of write cycles, on first clock after deselection, and when all CEs are inactive - preventing bus contention during critical timing windows.

How does the ZZ (sleep) mode reduce power consumption?

Asserting ZZ LOW places the device in deep-sleep mode, disabling internal clocks, output drivers, and input receivers while retaining memory contents. This reduces CMOS standby current to ≤120 µA - a >99% reduction versus active standby - with wake-up latency under 100 ns upon ZZ deassertion.

Can CY7C1472BV25-200AXC be used in place of CY7C1470BV25?

No - CY7C1472BV25 (4M × 18) and CY7C1470BV25 (2M × 36) differ in organization, pin count (100-pin TQFP only for CY7C1472BV25 vs. 100-pin TQFP/165-ball FBGA for CY7C1470BV25), and byte-write pin mapping (BWa/BWb only vs. BWa–BWd), making them incompatible for direct replacement without board redesign.