Infineon Technologies CY7C1472BV25-200AXCT

Overview

CY7C1472BV25-200AXCT from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, delivers 3.0 ns clock-to-output delay, supports byte-write via BWa/BWb, and uses single 2.5 V supply with separate 2.5 V I/O (VDDQ). It enables back-to-back read/write transitions in burst-capable packet buffering applications.

For engineers reviewing the CY7C1472BV25-200AXCT datasheet, CY7C1472BV25-200AXCT pinout, CY7C1472BV25-200AXCT application, or CY7C1472BV25-200AXCT equivalent, key selection criteria include burst order control (MODE pin), synchronous self-timed write timing, JTAG boundary scan support, and TQFP-100 package compatibility with legacy ZBT™ designs.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs are driven through output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without inter-cycle gaps.

Burst operation supports linear or interleaved addressing via MODE pin configuration; byte-write capability is implemented using two dedicated BWa/BWb signals controlling 18-bit data groups; ZZ Sleep Mode and Stop Clock options reduce power during idle cycles while preserving data integrity.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, surface-mount compatible with automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102418BLL-200TQLI, CY7C1472BV25-200AXCT uniquely combines 72-Mbit density, zero-wait-state 200 MHz operation, MODE-configurable burst order, and IEEE 1149.1 JTAG-making it optimal for next-generation telecom and industrial gateways demanding both performance and testability.

Availability

CY7C1472BV25-200AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and FPGA co-processor cache applications requiring stable component supply across multi-year production cycles.

Supply support for CY7C1472BV25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1472BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in high-speed networking and telecom infrastructure equipment.

FAQ

What is the function of the MODE pin on CY7C1472BV25-200AXCT?

The MODE pin selects burst addressing order: pulled HIGH for interleaved burst (default when floating), pulled LOW for linear burst. It must remain static during operation and is sampled only at power-up or reset. This setting determines how the internal address counter increments during burst sequences-matching host processor expectations without software overhead.

Does CY7C1472BV25-200AXCT support partial writes without read-modify-write cycles?

Yes-via BWa and BWb pins, which enable independent write masking for two 18-bit data groups (DQa/DQPa and DQb/DQPb). When WE is active and a BW signal is LOW, only its associated data group is updated. This eliminates need for external read-modify-write logic and reduces bus bandwidth usage by up to 50% in protocol header manipulation.

How does the ZZ Sleep Mode affect data retention and wake-up timing?

In ZZ Sleep Mode (ZZ pin LOW), core power drops to <120 µA while retaining full memory contents. Wake-up occurs synchronously on the next valid CLK edge after ZZ returns HIGH, with no additional latency beyond standard access timing. Data integrity is guaranteed across temperature and voltage ranges per datasheet specifications.

Can CY7C1472BV25-200AXCT be used in place of ZBT™ SRAMs without redesign?

Yes-it is pin-compatible and functionally equivalent to ZBT™ devices (e.g., IDT72V2115), sharing identical pinout, timing model, and control protocol. No PCB or firmware changes are needed; however, MODE and ZZ pins are unused in ZBT™ designs and may be tied off per application requirements.