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Infineon Technologies CY7C1472BV33-167BZC

Part No.:
CY7C1472BV33-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1472BV33-167BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,651

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Product details

Overview

CY7C1472BV33-167BZC from Cypress Semiconductor is a 3.3 V, 4M × 18 (72-Mbit) synchronous pipelined SRAM with NoBL™ architecture, supporting zero-wait-state 167 MHz bus operation, fully registered I/O, and byte-write capability for high-throughput memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1472BV33-167BZC datasheet, CY7C1472BV33-167BZC pinout, CY7C1472BV33-167BZC application, or CY7C1472BV33-167BZC equivalent, key selection criteria include its 167 MHz maximum clock frequency, 3.4 ns max access time, JEDEC-standard 100-pin TQFP package, and synchronous self-timed write control with four byte-write selects (BWa–BWb).

Technical Context

The CY7C1472BV33-167BZC implements a fully synchronous, pipelined burst SRAM architecture with No Bus Latency™ logic, enabling true back-to-back read/write operations without wait states. All address, control, and data inputs are registered on the rising edge of CLK, and all outputs pass through output registers synchronized to the same clock edge.

It supports linear or interleaved burst orders, includes three synchronous chip enables (CE1/CE2/CE3), an asynchronous OE, Clock Enable (CEN) for cycle suspension, and ZZ Sleep Mode for low-power standby. Byte-write capability is implemented via two dedicated BW inputs (BWa, BWb), each controlling one 18-bit data segment (DQa/DQPa and DQb/DQPb).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization), enabling compact high-bandwidth buffer designs for 18-bit parallel interfaces.
Max Clock Frequency 167 MHz - guarantees sustained 167 million transfers per second with zero wait states in pipelined mode.
Access Time 3.4 ns - defines worst-case clock-to-output delay for timing-critical synchronous read cycles.
Supply Voltage 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - supports mixed-voltage system interfacing and backward compatibility with 2.5 V logic.
Power Consumption 450 mA max operating current, 120 mA CMOS standby current - enables thermal management in dense memory arrays.
Byte Write Inputs BWa, BWb - independently enable writes to upper/lower 18-bit data segments, eliminating need for external masking logic.
Package 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-compliant Pb-free - ensures standard PCB assembly and thermal performance up to 85°C ambient.

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, lead-free per JEDEC standard.

Pin/Terminal Circuit Role Design Meaning
A0, A1, A[2:17] Synchronous Address Input 18-bit address bus sampled on rising CLK edge; selects one of 4M locations in 4M × 18 configuration.
BWa, BWb Synchronous Byte Write Select Active-low controls write enable for DQa/DQPa (BWa) and DQb/DQPb (BWb); qualified by WE and CLK.
CLK Synchronous Clock Input Rising-edge-triggered master clock; qualified by CEN - only recognized when CEN = LOW.
CEN Clock Enable Active-low input that masks CLK without deselecting device; extends previous cycle for timing margin or power gating.
CE1, CE2, CE3 Synchronous Chip Enables Three-level decode (CE1=LOW, CE2=HIGH, CE3=LOW) enables bank selection in multi-SRAM systems.
OE Asynchronous Output Enable Active-low tri-states outputs during write sequences and deselected states to prevent bus contention.
DQa–DQb, DQPa–DQPb Bidirectional Data I/O 18-bit primary data (DQa/DQb) + 2-bit parity (DQPa/DQPb); direction controlled by OE and internal read/write state.
ADV/LD Advance/Load Control HIGH advances internal burst counter; LOW loads new address - enables flexible burst and random access modes.
ZZ Deep Sleep Mode Active-low entry into ultra-low-power standby (reduced ICC), with automatic recovery on next valid access.

Key Features

Feature Design Value
NoBL™ Architecture Enables unlimited consecutive read/write operations with no bus latency - eliminates pipeline stalls in burst-intensive applications.
Internally Self-Timed Output Buffer Removes dependency on external OE timing control - simplifies PCB layout and eliminates setup/hold violations on OE.
Synchronous Self-Timed Writes On-chip write timing logic eliminates external write pulse width constraints - ensures reliable data capture across voltage/temperature.
JTAG Boundary Scan (IEEE 1149.1) Full scan chain support for board-level testability and interconnect verification in high-density routing environments.
Flexible Burst Ordering Configurable linear or interleaved burst sequences - matches legacy ZBT protocol requirements and modern memory controller expectations.

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer between ingress and egress traffic managers.

Use Value: 167 MHz zero-wait-state operation sustains 3.0 Gbps aggregate throughput (18-bit × 167 MHz), minimizing packet jitter and queuing delay.

Use Scenario: Frame buffering in SONET/SDH OC-192 line interface units requiring deterministic access to 72-Mbit memory space.

IC Role / Device Role / Timing Role: Synchronous burst-access memory for ATM cell reassembly and pointer processing engines.

Use Value: Fully registered I/O and 3.4 ns access time ensure timing closure at 167 MHz in FPGA- or ASIC-based framer designs.

Baseband Processor Cache Radar Signal Processing Buffer

Use Scenario: Temporary storage of channelized voice/data frames in wireless base station transceivers before modulation/demodulation.

IC Role / Device Role / Timing Role: Low-latency, byte-selectable memory for real-time frame alignment and header manipulation.

Use Value: Dual byte-write enables independent update of payload and metadata fields without full-word overwrite, reducing bus traffic.

Use Scenario: Capturing and staging digitized radar return samples prior to FFT computation in phased-array systems.

IC Role / Device Role / Timing Role: High-reliability pipelined SRAM for continuous streaming of 18-bit ADC data at sustained 167 MSPS.

Use Value: ZZ Sleep Mode reduces standby current to ≤120 mA during idle periods, extending thermal headroom in sealed RF enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1472BV33-200BZC 200 MHz max clock, 3.0 ns access time, 500 mA operating current - higher speed, higher power. Required where system clock exceeds 167 MHz but ≤200 MHz; not drop-in compatible due to tighter timing margins. Select when throughput >3.0 Gbps is mandatory and thermal/power budget allows.
AS7C34098B-167JCIN 4M × 18, 167 MHz, 3.3 V, but uses standard ZBT architecture (not NoBL™), no ZZ Sleep Mode, different pinout. Lacks NoBL™ back-to-back efficiency and deep-sleep capability; requires external OE timing control. Choose only if legacy ZBT compatibility is prioritized over power savings and latency optimization.

Compared with CY7C1472BV33-200BZC, the -167BZC trades 33 MHz bandwidth for lower power and relaxed timing; versus AS7C34098B-167JCIN, it delivers superior burst efficiency and integrated sleep control at the cost of non-interchangeable pin mapping.

Availability

CY7C1472BV33-167BZC is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, baseband processors, and radar signal processing systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1472BV33-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C147xBV33 family targets high-speed, low-latency memory subsystems in infrastructure equipment - designed specifically to replace asynchronous SRAMs and legacy ZBT devices with improved throughput, reduced timing complexity, and enhanced power management.

FAQ

Is CY7C1472BV33-167BZC pin-compatible with CY7C1470BV33-167BZI?

No. While both are 72-Mbit NoBL SRAMs, CY7C1472BV33-167BZC uses a 4M × 18 organization with BWa/BWb byte-write pins, whereas CY7C1470BV33-167BZI is 2M × 36 with BWa–BWd. Their TQFP pinouts differ significantly - especially in data bus width, parity pin allocation, and byte-select count - making them electrically and mechanically incompatible.

Does CY7C1472BV33-167BZC support 2.5 V I/O operation?

Yes. The device features dual-supply I/O (VDDQ) supporting 2.5 V nominal operation while maintaining 3.3 V core (VDD). VDDQ must be externally supplied at 2.5 V ±0.2 V, and all I/O timing parameters (e.g., tDS, tDH) are specified under those conditions per the datasheet's 2.5 V AC test conditions section.

What is the function of the ADV/LD pin during burst reads?

During burst reads, ADV/LD = HIGH causes the internal address counter to auto-increment after each clock cycle, enabling sequential access across consecutive locations. When ADV/LD = LOW, the device latches a new starting address from A[17:0] on the next rising CLK edge - allowing precise control over burst origin without external address generation logic.

Can CY7C1472BV33-167BZC operate without JTAG functionality enabled?

Yes. JTAG is disabled by default at power-up. The TAP controller remains inactive until the ENABLE instruction is loaded via TMS/TCK sequence. No external pull-ups or configuration pins are required to disable JTAG - it remains inert unless explicitly activated, posing no risk to normal memory operation or timing.

CY7C1472BV33-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1472BV33-167BZC FAQ

1.How can I place an order for CY7C1472BV33-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1472BV33-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1472BV33-167BZC reliable?

The price and inventory of CY7C1472BV33-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1472BV33-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1472BV33-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1472BV33-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1472BV33-167BZC?

CY7C1472BV33-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1472BV33-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1472BV33-167BZC?

For technical support, including CY7C1472BV33-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1472BV33-167BZC requirements.

6.How does Aetrix verify that CY7C1472BV33-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1472BV33-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1472BV33-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1472BV33-167BZC?

All CY7C1472BV33-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1472BV33-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1472BV33-167BZC part is unused and in its original packaging.

Return procedure for CY7C1472BV33-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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