Infineon Technologies CY7C1472V25-200AXC
- Part No.:
- CY7C1472V25-200AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1472V25-200AXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,150
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Product details
Overview
CY7C1472V25-200AXC from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 2M × 36 or 4M × 18 or 1M × 72. It operates at 200 MHz with zero wait states, delivers 3.0 ns clock-to-output time, supports byte write via BWa/BWb pins, and uses single 2.5 V core supply with separate 2.5 V I/O supply (VDDQ). It is deployed in high-throughput network packet buffering and FPGA co-processor memory interfaces.
For engineers reviewing the CY7C1472V25-200AXC datasheet, CY7C1472V25-200AXC pinout, CY7C1472V25-200AXC application, or CY7C1472V25-200AXC equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed writes, JTAG boundary scan compliance, ZZ sleep mode control, and TQFP-100 package compatibility with legacy ZBT™ designs.
Technical Context
The device implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK; all outputs are driven through output registers synchronized to CLK. Internal self-timed output buffer control eliminates asynchronous OE timing constraints.
It supports three chip enables (CE1, CE2, CE3) for bank selection, burst read/write with ADV/LD and MODE pins, and synchronous write enable (WE) with byte-select granularity (BWa, BWb). The ZZ pin enables low-power sleep mode, and CEN suspends clock domain activity without resetting internal state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (configurable as 2M × 36, 4M × 18, or 1M × 72) |
| Max Clock Frequency | 200 MHz - enables true back-to-back read/write with no wait states |
| Access Time | 3.0 ns - clock-to-output delay at 200 MHz, critical for timing-critical datapaths |
| Supply Voltages | VDD = 2.5 V ±0.2 V (core), VDDQ = 2.5 V ±0.2 V (I/O) - decoupled domains reduce noise coupling |
| Power Consumption | 450 mA max operating current, 120 mA CMOS standby - defines thermal budget in dense PCB layouts |
| Burst Capability | Linear or interleaved burst order - matches CPU/FPGA burst addressing patterns without glue logic |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testability in system-level production |
Pinout & Package
Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary clock input | Rising-edge-triggered master timing reference for all synchronous operations |
| CEN | Clock enable | Asynchronously gates CLK domain; deassertion suspends operation while preserving state |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous enable hierarchy for multi-bank memory mapping and power gating |
| WE | Write enable | Synchronous active-low signal enabling write cycles when asserted with valid address/data |
| BWa, BWb | Byte write selects | Independent 18-bit write masking for 36-bit bus - enables partial-word updates without read-modify-write |
| ADV/LD | Address valid/load | Controls burst address generation: advances counter on read, loads new address on write |
| ZZ | Deep sleep mode | Asynchronous input forcing device into ultra-low-power state (<100 µA); requires external tie to GND per errata |
| OE | Output enable | Asynchronous tri-state control for output drivers - avoids bus contention during write sequences |
| DQa–DQb | Data I/O bus (36-bit) | Bidirectional, registered data interface; DQa = bits 0–17, DQb = bits 18–35 |
| VDD, VDDQ, VSS | Power terminals | VDD (core), VDDQ (I/O), VSS (ground) - require dedicated decoupling per JEDEC TQFP layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without wait states |
| Synchronous Self-Timed Writes | On-chip timing logic ensures reliable write completion independent of system-level timing margins |
| Byte Write Select (BWa/BWb) | Enables 18-bit granular writes on 36-bit bus - reduces bus traffic and avoids full-word overwrites |
| ZZ Sleep Mode | Reduces standby current to <100 µA; activated asynchronously for rapid power-state transitions |
| JTAG Boundary Scan | Full IEEE 1149.1 support enables automated PCB test coverage and interconnect validation |
Applications
| Network Packet Buffering | FPGA Co-Processor Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches with line-rate throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between MAC and switching fabric logic. Use Value: 200 MHz zero-wait-state operation sustains 7.2 GB/s peak bandwidth across 36-bit bus, matching 10Gbps+ PHY rates. |
Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU to FPGA-accelerated pipeline. IC Role / Device Role / Timing Role: Dual-port accessible scratchpad memory for FPGA logic with deterministic access timing. Use Value: Fully registered I/O and pipelined burst capability eliminate setup/hold violations in FPGA timing closure. |
| Telecom Baseband Processing | Industrial Real-Time Control |
|
Use Scenario: Holding channelized TDM data streams and protocol stack buffers in 4G/5G remote radio units. IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly with DSP or ARM-based baseband processors. Use Value: Linear/interleaved burst modes align with TI C6000 or Arm Cortex-R series burst addressing patterns. |
Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in servo drive controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time PLC and motion sequencer firmware. Use Value: 3.0 ns clock-to-output and synchronous write enable guarantee sub-microsecond memory response for closed-loop timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 36-bit, 2M × 36, 15 ns access, 133 MHz max - slower speed grade, non-NoBL architecture | Lacks burst capability and self-timed writes; requires external OE timing management | Select when cost sensitivity outweighs throughput requirements and legacy timing design reuse is prioritized |
| ISSI IS61WV102436B | 36-bit, 1M × 36, 2.5 V, 167 MHz - lower density, same NoBL-compatible interface | Half the memory depth; lacks ZZ sleep mode and JTAG scan support | Choose for space-constrained designs where 36-Mbit capacity suffices and debug/test coverage is secondary |
Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1472V25-200AXC delivers higher bandwidth (200 MHz vs. 133/167 MHz), deeper memory (2M×36 vs. 1M×36), and integrated debug features (JTAG, ZZ mode), making it optimal for next-generation telecom and FPGA-adjacent systems requiring deterministic latency and testability.
Availability
CY7C1472V25-200AXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and Pb-free manufacturing compliance.
Supply support for CY7C1472V25-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for industrial, automotive, and communications markets.
CY7C1472V25 belongs to the Cypress NoBL™ SRAM product line, designed specifically for systems demanding zero-latency, burst-capable memory interfaces between FPGAs, ASICs, and network processors.
FAQ
What is the function of the ZZ pin, and how must it be connected?
The ZZ pin enables deep sleep mode, reducing standby current to under 100 µA. Per documented errata (page 36), ZZ (Pin 64) must be externally tied to ground for correct operation - leaving it floating or pulling high causes undefined behavior and potential functional failure. This requirement applies regardless of whether sleep mode is actively used in the design.
How does the NoBL™ architecture improve system throughput compared to standard synchronous SRAMs?
NoBL™ eliminates bus turnaround latency by enabling true back-to-back read/write operations on every clock cycle without wait states. Unlike conventional SRAMs requiring idle cycles between accesses, CY7C1472V25-200AXC sustains 200 MHz continuous data transfer - delivering up to 7.2 GB/s peak bandwidth on its 36-bit bus, critical for packet-forwarding and real-time signal processing pipelines.
Can CY7C1472V25-200AXC operate in 4M × 18 configuration, and what pin changes are required?
Yes - the device supports 4M × 18 mode via MODE pin assertion (MODE = HIGH). In this configuration, the same 36-bit DQa/DQb bus carries two 18-bit words per cycle; address lines A0–A19 are used, and burst length is adjusted accordingly. No physical pin reassignment is needed - only MODE pin voltage and controller burst addressing logic must be configured per datasheet Table 12.
Is JTAG boundary scan supported in all operating modes, including ZZ sleep?
JTAG remains fully operational in all functional states except when ZZ sleep is active - the TAP controller is disabled during ZZ mode to minimize leakage. Boundary scan testing must be performed in active or standby (CEN-deasserted) states. The TCK, TMS, TDI, and TDO pins retain their IEEE 1149.1 functionality and electrical characteristics per AC switching specs in Section 20 of the datasheet.
CY7C1472V25-200AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1472V25-200AXC FAQ
1.How can I place an order for CY7C1472V25-200AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1472V25-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1472V25-200AXC reliable?
The price and inventory of CY7C1472V25-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1472V25-200AXC is usually 5 days.
3.What payment methods are accepted for CY7C1472V25-200AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1472V25-200AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1472V25-200AXC?
CY7C1472V25-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1472V25-200AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1472V25-200AXC?
For technical support, including CY7C1472V25-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1472V25-200AXC requirements.
6.How does Aetrix verify that CY7C1472V25-200AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1472V25-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1472V25-200AXC meets industry standards.
7.What is the process for return or replacement of CY7C1472V25-200AXC?
All CY7C1472V25-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1472V25-200AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1472V25-200AXC part is unused and in its original packaging.
Return procedure for CY7C1472V25-200AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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