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Infineon Technologies CY7C1473BV33-133AXC

Part No.:
CY7C1473BV33-133AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1473BV33-133AXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,906

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Product details

Overview

CY7C1473BV33 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports 133 MHz zero-wait-state bus operation, delivers 6.5 ns clock-to-output timing, and features synchronous self-timed writes, three chip enables (CE1/CE2/CE3), and asynchronous output enable (OE). Used in backplane interface buffers requiring true back-to-back read/write transitions.

For engineers reviewing the CY7C1473BV33 datasheet, CY7C1473BV33 pinout, CY7C1473BV33 application, or CY7C1473BV33 equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), byte-write select granularity (BWA/BWB), ZZ sleep mode power control, and TQFP-100 package compatibility with JEDEC-standard footprint.

Technical Context

This SRAM implements a synchronous, registered-input flow-through architecture where all address, control, and data inputs are latched on the rising edge of CLK, qualified by CEN. The internal burst counter advances on ADV/LD HIGH, enabling linear or interleaved burst sequences selected by the MODE strap pin.

Write operations use on-chip self-timed logic synchronized to CLK, eliminating external write pulse timing constraints. Output drivers are synchronously tri-stated during write data cycles and upon chip deselect, preventing bus contention without OE coordination.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 72 Mbit (4M × 18 organization)
Max clock frequency 133 MHz - enables zero-wait-state burst transfers in high-speed bus interfaces
Access time (tCDV) 6.5 ns - defines minimum clock-to-valid-output delay for timing-critical read paths
I/O supply (VDDQ) 3.3 V or 2.5 V - supports mixed-voltage system interfacing with configurable I/O voltage
Burst capability Linear or interleaved - selectable via MODE pin; determines address increment pattern for burst reads/writes
Power-down mode ZZ sleep mode - reduces standby current while preserving data integrity without time-critical entry/exit
JTAG support IEEE 1149.1 compliant - enables boundary-scan testing in assembled PCBs (TQFP package excludes TDO)

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), 14 mm × 20 mm × 1.4 mm body height.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Latches all registered inputs on rising edge; qualified by CEN to suspend clock recognition
CEN Clock enable Active LOW; masks CLK without deselecting device, extending previous cycle for timing margin
ADV/LD Advance/load control HIGH advances internal burst counter; LOW loads new address - required after deselect to initiate next access
BWA, BWB Byte write selects Active LOW; enable independent 9-bit writes to DQA/DQB byte lanes when WE is asserted
CE1, CE2, CE3 Synchronous chip enables CE1/CE3 active LOW, CE2 active HIGH - provide three-level depth expansion control for memory banks
OE Asynchronous output enable Active LOW enables DQ outputs; masked during write data phase to prevent contention
ZZ Asynchronous sleep control Active HIGH places device in low-power ZZ mode with data retention; internal pull-down ensures safe default
MODE Burst order configuration Strap pin: GND = linear burst, VDD/floating = interleaved burst - sets address increment behavior

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Eliminates dead cycles between consecutive read/write operations - enables true back-to-back transfers at full clock rate
Synchronous self-timed writes Removes external write-pulse timing constraints - simplifies controller design and improves write reliability
Registered inputs with clock qualification All control/address/data inputs sampled on CLK rise - ensures deterministic setup/hold timing across temperature/voltage
Three-level chip enable hierarchy CE1 (LOW), CE2 (HIGH), CE3 (LOW) - enables seamless depth expansion without external decode logic
Automatic output tri-state control Outputs disabled during write data phase and chip deselect - prevents bus conflicts without OE coordination

Applications

Network Packet Buffer Telecom Line Card Cache

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switching fabric; handles bursty traffic with zero-wait-state read/write interleaving.

Use Value: 133 MHz operation and 6.5 ns tCDV ensure frame payload transfer completes within single-cycle timing margins, reducing jitter in cut-through switching.

Use Scenario: Caching ATM cell headers and payload segments in OC-192 SONET line interface units.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as descriptor cache and payload buffer; MODE pin configures interleaved burst for header+payload co-access.

Use Value: Byte-write capability (BWA/BWB) allows selective update of cell status bits without disturbing adjacent payload bytes, improving memory efficiency.

Baseband Processor Memory Radar Signal Processing Buffer

Use Scenario: Temporary storage of decoded channel data in 3G/4G LTE baseband ASICs before FFT processing.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced directly to ASIC's memory controller; CE1/CE2/CE3 enable banked access across multiple processing channels.

Use Value: ZZ sleep mode reduces idle power by >80% during channel silence periods while retaining stored channel state for rapid wake-up.

Use Scenario: Real-time buffering of digitized IF samples in airborne phased-array radar receivers.

IC Role / Device Role / Timing Role: Flow-through SRAM accepting ADC samples at 100+ MSPS and feeding DSP cores via burst reads; CLK/CEN synchronization aligns with system timing reference.

Use Value: Registered inputs and deterministic 6.5 ns access guarantee sample-to-processing latency remains fixed across voltage/temperature, critical for coherent beamforming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133PF 4M × 18, 133 MHz, but uses ZBT™ architecture with separate data-in/data-out pins and requires OE-driven output control Lacks NoBL™ zero-dead-cycle operation; introduces 1-cycle gap between write-read transitions Select when legacy ZBT™ compatibility or pinout reuse is required; not drop-in due to different OE timing and burst control logic
ISSI IS61WV102418BLL-133TQLI 4M × 18, 133 MHz, but lacks MODE-selectable burst order and has no ZZ sleep mode Fixed linear burst only; higher standby current (150 mA vs. 120 mA) limits suitability in power-constrained systems Choose for cost-sensitive industrial applications where burst flexibility and ultra-low sleep power are non-critical

Compared with IDT72V2115L133PF and IS61WV102418BLL-133TQLI, CY7C1473BV33 uniquely delivers NoBL™ zero-dead-cycle throughput, MODE-configurable burst sequencing, and hardware-managed ZZ sleep - making it optimal for latency- and power-sensitive telecom and defense signal processing.

Availability

CY7C1473BV33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant TQFP packaging.

Supply support for CY7C1473BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1473BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to eliminate bus latency in high-speed packet-forwarding and real-time signal processing systems.

FAQ

What is the function of the MODE pin on CY7C1473BV33?

The MODE pin is a static configuration input that selects burst address sequence behavior: tied to GND for linear burst (sequential address increment), or to VDD/floating for interleaved burst (address toggles MSB for cache-friendly access). It is sampled only at power-up or reset and cannot be changed dynamically during operation.

How does the ZZ sleep mode interact with chip enable signals?

ZZ sleep mode operates independently of CE1/CE2/CE3 states. When ZZ is driven HIGH, the device enters low-power retention regardless of chip enable status. CE signals remain functional during ZZ mode, allowing immediate wake-up and resumption of access upon ZZ deassertion - no reinitialization or timing recovery is required.

Can CY7C1473BV33 operate with 2.5 V I/O while maintaining 3.3 V core voltage?

Yes. VDDQ (I/O supply) and VDD (core supply) are independent. The device supports VDDQ = 2.5 V and VDD = 3.3 V simultaneously, enabling direct interfacing with 2.5 V logic families while retaining full 133 MHz performance and 6.5 ns access timing - verified per AC electrical specifications in the datasheet.

Is JTAG boundary scan supported in the TQFP-100 package?

No. The TQFP-100 package omits the TDO pin required for IEEE 1149.1 boundary scan output. JTAG functionality is only fully implemented in the 165-ball FBGA variant. For TQFP users, JTAG-based testing must rely on external emulation or alternative verification methods.

CY7C1473BV33-133AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1473BV33-133AXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1473BV33-133AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1473BV33-133AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1473BV33-133AXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1473BV33-133AXC?

For technical support, including CY7C1473BV33-133AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1473BV33-133AXC requirements.

6.How does Aetrix verify that CY7C1473BV33-133AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1473BV33-133AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1473BV33-133AXC meets industry standards.

7.What is the process for return or replacement of CY7C1473BV33-133AXC?

All CY7C1473BV33-133AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1473BV33-133AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1473BV33-133AXC part is unused and in its original packaging.

Return procedure for CY7C1473BV33-133AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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