Infineon Technologies CY7C1474BV25-167BGCT

Overview

CY7C1474BV25-167BGCT from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with 3.4 ns maximum clock-to-output delay, supports synchronous self-timed writes, byte-write capability via eight BW inputs (BWSa–BWSh), and uses a single 2.5V core supply with separate 2.5V I/O supply (VDDQ).

For engineers reviewing the CY7C1474BV25-167BGCT datasheet, CY7C1474BV25-167BGCT pinout, CY7C1474BV25-167BGCT application, or CY7C1474BV25-167BGCT equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), JTAG boundary-scan support, 209-ball FBGA package compatibility, and zero-wait-state back-to-back read/write performance in depth-expanded memory systems.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back reads and writes without wait states, using pipelined address and data paths.

Burst operation is controlled by ADV/LD and MODE pins-ADV/LD loads or advances the internal counter, while MODE selects linear or interleaved burst order. Write operations are qualified by WE and eight independent byte-write enables (BWSa–BWSh), each controlling one 9-bit data/parity pair (DQa/DQPa through DQh/DQPh), supporting partial-word writes without external masking logic.

Key Specifications

Pinout & Package

Package: 209-ball FBGA (14 mm × 22 mm × 1.76 mm, ball pitch 1.0 mm), Pb-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1474BV25-250BGCT, this 167 MHz variant trades 83 MHz bandwidth for relaxed timing margin and lower power (400 mA max operating current vs. 450 mA); versus AS7C36256P-167JC, it delivers double density, integrated parity, and true NoBL performance at higher pin count and FBGA complexity.

Availability

CY7C1474BV25-167BGCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1474BV25-167BGCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1474BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput buffering in networking and telecom infrastructure where deterministic latency and burst efficiency are critical.

FAQ

What is the function of the MODE pin, and can it be changed dynamically?

The MODE pin selects burst order: HIGH enables interleaved burst, LOW enables linear burst. It must remain static during device operation because changing MODE mid-burst violates timing assumptions in the internal counter logic and may cause address misalignment. Cypress specifies MODE as a strap pin-not a runtime control-and recommends tying it to VDD or GND via a pull-up/down resistor.

How does the CY7C1474BV25 handle simultaneous read and write operations?

It does not support true simultaneous read/write on the same port. As a single-port SRAM, it executes reads and writes sequentially in pipelined fashion: a write initiated on clock N completes before a read on clock N+1 begins. However, back-to-back operations (read→write or write→read) occur with zero wait states due to NoBL™ architecture, achieving effective 167 MT/s bidirectional throughput over time.

Is VDDQ required to be powered even during standby or sleep mode?

Yes. VDDQ must remain at 2.5 V whenever the device is powered, including ZZ Sleep Mode. The datasheet specifies that VDDQ supplies the output drivers and DQ/DQP I/O circuitry; removing VDDQ risks latch-up or undefined I/O states. Only VDD may be reduced during ZZ mode, but VDDQ must stay active to maintain I/O integrity and JTAG functionality.

Can the eight byte-write enables (BWSa–BWSh) be used independently of the WE signal?

No. All BWS signals are qualified by WE: only when WE is asserted LOW do the BWS inputs determine which 9-bit lanes are written. If WE is HIGH, no write occurs regardless of BWS states. This two-level qualification prevents accidental partial writes and ensures atomicity-consistent with ZBT™ compatibility requirements stated in the datasheet.