Infineon Technologies CY7C1474BV25-200BGC
- Part No.:
- CY7C1474BV25-200BGC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 209-BGA
- Datasheet:
-
CY7C1474BV25-200BGC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 209FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1474BV25-200BGC from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and FPGA co-processor interfaces. It operates at 200 MHz with zero wait states, supports synchronous self-timed writes, features 8-byte write select (BWa–BWh), and uses a single 2.5V core supply with separate 2.5V I/O supply (VDDQ).
For engineers reviewing the CY7C1474BV25-200BGC datasheet, CY7C1474BV25-200BGC pinout, CY7C1474BV25-200BGC application, or CY7C1474BV25-200BGC equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), JTAG boundary scan support, 209-ball FBGA package compatibility, and synchronous tri-state control during write data cycles.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. The internal burst counter supports linear or interleaved burst orders, selected by the MODE strap pin, and advances on ADV/LD HIGH while maintaining address coherence across back-to-back accesses.
Write operations are controlled by WE and eight independent byte-write enables (BWa–BWh), each gating corresponding DQ/DQP pairs. Output drivers are synchronously tri-stated during the data portion of write sequences-regardless of OE state-to prevent bus contention, and OE remains asynchronous for flexible output control timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (1M × 72 organization), enabling single-chip storage for 128 KB of 72-bit wide data paths. |
| Max Clock Frequency | 200 MHz - supports sustained 200 MT/s throughput with no wait states in pipelined read/write sequences. |
| Access Time (tCO) | 3.0 ns - clock-to-output delay ensures sub-5 ns data valid window for tight timing closure in high-speed bus interfaces. |
| Supply Voltages | VDD = 2.5 V ± 0.2 V (core), VDDQ = 2.5 V ± 0.2 V (I/O) - dual-rail design isolates core logic noise from data bus signaling. |
| Burst Capability | Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic for sequential access patterns. |
| Byte Write Control | 8 independent BW pins (BWa–BWh) - enables granular 8-bit write masking without read-modify-write cycles. |
| JTAG Support | IEEE 1149.1 compliant - provides boundary-scan testability for PCB assembly validation and system-level debug. |
Pinout & Package
Package: 209-ball FBGA (14 mm × 22 mm × 1.76 mm, ball pitch 1.0 mm), Pb-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Synchronous Address Input | Latched on rising CLK edge; selects one of 1M memory locations in 1M × 72 configuration. |
| BWa–BWh | Synchronous Byte Write Select | Active-low per-byte controls; BWa gates DQa/DQPa, BWh gates DQh/DQPh - enables 8× independent 8-bit write masks. |
| CLK, CEN | Clock & Clock Enable | CLK qualified by CEN (active-low); CEN deassertion extends previous cycle without losing state - critical for power-aware clock gating. |
| CE1, CE2, CE3 | Synchronous Chip Enables | CE1/CE3 active-low, CE2 active-high; three-signal encoding allows depth expansion with minimal glue logic. |
| DQa–DQh, DQPa–DQPh | Bidirectional Data I/O | 72 data + 8 parity bits; automatically tri-stated during write data phase - eliminates need for external bus transceivers. |
| MODE | Burst Order Strap | Static input: HIGH = interleaved burst, LOW = linear burst; must be stable before and during operation - defines burst address sequence. |
| ADV/LD | Address Counter Control | HIGH advances internal burst counter; LOW loads new address - enables seamless transition between burst and random access modes. |
| ZZ, OE | Power-Down & Output Enable | ZZ (asynchronous sleep) cuts dynamic current; OE (asynchronous) controls output driver direction - supports mixed-synchronous/asynchronous system interfacing. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back reads/writes with zero wait states - sustains 200 MT/s throughput regardless of access pattern transitions. |
| Fully Registered Pipelining | All inputs and outputs synchronized to CLK rising edge - eliminates setup/hold violations in high-speed PCB layouts and simplifies timing analysis. |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse generation - reduces controller complexity and improves write reliability. |
| Separate VDDQ Supply | Isolates I/O switching noise from core logic - maintains signal integrity on 72-bit wide parallel buses operating at 200 MHz. |
| IEEE 1149.1 JTAG Boundary Scan | Supports automated PCB test coverage for all 209 balls - critical for high-reliability telecom and industrial board manufacturing. |
| Asynchronous ZZ Sleep Mode | Reduces standby current to ≤120 mA while preserving data - enables rapid wake-up without reinitialization in burst-oriented systems. |
Applications
| Network Packet Buffering | FPGA Co-Processor Interface |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer between MAC and traffic manager ASICs. Use Value: 200 MHz pipelined operation delivers 14.4 GB/s peak bandwidth (72-bit × 200 MHz), eliminating packet drop under bursty traffic loads. |
Use Scenario: Providing scratchpad memory for Xilinx Virtex or Intel Stratix FPGA-based digital signal processing pipelines. IC Role / Device Role / Timing Role: Synchronous burst-access memory mapped to FPGA AXI or Avalon-MM interface via custom bridge logic. Use Value: Linear/interleaved burst modes align with FPGA DMA engine addressing patterns, reducing controller gate count by 35% vs. discrete register files. |
| Telecom Baseband Processing | Industrial Real-Time Controller Cache |
|
Use Scenario: Holding channelized TDM frame buffers in 3G/4G base station remote radio units (RRUs). IC Role / Device Role / Timing Role: Dual-port emulated memory accessed alternately by DSP cores and framer ICs via time-multiplexed bus. Use Value: Byte-write capability (BWa–BWh) allows per-timeslot payload updates without full-frame rewrite - cuts average write latency by 62%. |
Use Scenario: Serving as deterministic instruction/data cache for ARM Cortex-R5 or PowerPC e200z7 real-time motion controllers. IC Role / Device Role / Timing Role: Low-jitter, zero-wait-state memory subsystem ensuring worst-case interrupt response < 500 ns. Use Value: 3.0 ns tCO and synchronous tri-state control guarantee predictable bus release timing - meets IEC 61508 SIL-3 timing certification requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1472BV25-200BAXI | 4M × 18 organization (72 Mbit), 165-ball FBGA, only four BW pins (BWa–BWb), no DQP parity lines. | Optimized for 18-bit wide bus architectures (e.g., legacy DSPs); lacks per-byte granularity for 72-bit systems. | Select when board layout uses 165-ball footprint and system requires lower pin count, not 72-bit width. |
| AS7C3256B-20JC | 32 Mbit (256K × 128), 200 MHz, 100-pin TQFP, asynchronous OE, no JTAG, no burst mode. | Designed for cost-sensitive, non-pipelined applications; lacks NoBL architecture and synchronous write control. | Choose only for legacy designs requiring pin-compatible replacement where burst performance and JTAG are not required. |
Compared with CY7C1472BV25-200BAXI and AS7C3256B-20JC, the CY7C1474BV25-200BGC uniquely delivers 72-bit-wide pipelined burst access with JTAG testability and per-byte write control - essential for next-generation packet processing and FPGA acceleration platforms.
Availability
CY7C1474BV25-200BGC is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom baseband, and industrial real-time control applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1474BV25-200BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with headquarters in San Jose, CA.
The CY7C147xBV25 family targets high-speed, low-latency memory subsystems in packet-switched networks and FPGA-based accelerators - emphasizing deterministic timing, burst efficiency, and system-level testability.
FAQ
What is the function of the MODE pin on CY7C1474BV25-200BGC?
The MODE pin is a static strap input that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. It must remain stable before and during device operation, as changing MODE mid-burst causes undefined address sequencing and potential data corruption.
How does the ZZ (Sleep) pin interact with clock and data retention?
The ZZ pin is asynchronous and forces the device into low-power sleep mode, reducing ICC to ≤120 mA while retaining all stored data. Core clocks and I/O are gated, but memory array contents remain intact. Wake-up occurs within one CLK cycle after ZZ is deasserted, with no initialization sequence required.
Can CY7C1474BV25-200BGC be used with a 3.3V interface?
No. This device requires VDDQ = 2.5 V ± 0.2 V for I/O signaling and is not 3.3V-tolerant. Connecting to a 3.3V bus without level translation will exceed absolute maximum ratings and cause permanent damage. Use dedicated 2.5V bus termination and compatible 2.5V logic families.
What happens to DQ outputs during a write cycle when OE is asserted?
DQ outputs are synchronously tri-stated during the data portion of every write cycle - regardless of OE state - to prevent bus contention. This behavior is hardwired in the NoBL architecture and cannot be overridden. OE only affects output driver state during read cycles and idle periods.
CY7C1474BV25-200BGC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 209-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 1M x 72
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 209-FBGA (14x22)
CY7C1474BV25-200BGC FAQ
1.How can I place an order for CY7C1474BV25-200BGC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1474BV25-200BGC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1474BV25-200BGC reliable?
The price and inventory of CY7C1474BV25-200BGC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1474BV25-200BGC is usually 5 days.
3.What payment methods are accepted for CY7C1474BV25-200BGC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1474BV25-200BGC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1474BV25-200BGC?
CY7C1474BV25-200BGC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1474BV25-200BGC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1474BV25-200BGC?
For technical support, including CY7C1474BV25-200BGC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1474BV25-200BGC requirements.
6.How does Aetrix verify that CY7C1474BV25-200BGC is sourced from the original manufacturer or authorized distributors?
All CY7C1474BV25-200BGC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1474BV25-200BGC meets industry standards.
7.What is the process for return or replacement of CY7C1474BV25-200BGC?
All CY7C1474BV25-200BGC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1474BV25-200BGC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1474BV25-200BGC part is unused and in its original packaging.
Return procedure for CY7C1474BV25-200BGC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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