Infineon Technologies CY7C1474BV25-200BGCT

Overview

CY7C1474BV25-200BGCT from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports linear/interleaved burst modes, features 8-byte write select (BWa–BWh), and uses a single 2.5V core supply with separate 2.5V I/O supply (VDDQ).

For engineers reviewing the CY7C1474BV25-200BGCT datasheet, CY7C1474BV25-200BGCT pinout, CY7C1474BV25-200BGCT application, or CY7C1474BV25-200BGCT equivalent, this device delivers deterministic 3.0 ns clock-to-output timing, synchronous self-timed writes, JTAG boundary scan support, and 209-ball FBGA packaging optimized for high-density routing in backplane interface designs.

Technical Context

The CY7C1474BV25-200BGCT implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write transitions without wait states.

Burst addressing is controlled by ADV/LD and MODE pins-ADV/LD loads or advances the internal counter, while MODE selects linear or interleaved burst order. Byte write capability is implemented via eight independent active-low BW signals (BWa–BWh), each controlling one 9-bit data/parity pair (DQx/DQP x), enabling granular 1–72-bit write operations.

Key Specifications

Pinout & Package

Package: 209-ball Fine-Pitch Ball Grid Array (FBGA), 14 mm × 22 mm × 1.76 mm body, RoHS-compliant (Pb-free and non-Pb-free options available).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1474BV25-250BGCT, the -200BGCT trades 50 MHz speed headroom for relaxed timing closure and lower power; versus AS7C3256B-20JC, it provides 28× higher bandwidth and deterministic pipelined behavior but requires clock-domain integration.

Availability

CY7C1474BV25-200BGCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1474BV25-200BGCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1474BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput buffering in packet-switched infrastructure where deterministic latency and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1474BV25-200BGCT?

The MODE pin selects burst order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. It must remain static during operation because changing MODE mid-burst causes undefined address sequencing. The pin is sampled only at power-up or reset, not dynamically.

How does the ZZ (Sleep) pin reduce power consumption?

Asserting ZZ LOW places the device in deep sleep mode, reducing CMOS standby current to ≤120 mA - identical to normal standby but with additional internal clock gating. Unlike CEN suspension, ZZ disables internal oscillators and memory array biasing, making it suitable for extended idle periods in power-constrained line cards.

Can CY7C1474BV25-200BGCT be used with a 3.3V I/O interface?

No. The device requires VDDQ = 2.5 V ± 0.2 V and has no 3.3V-tolerant I/O. Connecting to a 3.3V bus without level translation risks damage or unreliable operation. External 2.5V-compatible level shifters or matching 2.5V logic families (e.g., HSTL or SSTL_2) are mandatory for interface compliance.

What is the role of ADV/LD during burst read sequences?

ADV/LD controls the internal burst counter: when LOW at clock rise, it loads the address from A[18:0]; when HIGH, it advances the counter to the next burst address. For sequential burst reads, ADV/LD is held HIGH after initial load - no external address changes are needed, reducing bus overhead and timing complexity.