Infineon Technologies CY7C1474BV33-200BGXC

Overview

CY7C1474BV33-200BGXC from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 200 MHz with zero wait states, supports 3.3 V core and 3.3 V/2.5 V I/O supplies, and delivers 3.0 ns clock-to-output time. Its 209-ball FBGA package enables dense PCB layouts in bandwidth-constrained systems.

For engineers reviewing the CY7C1474BV33-200BGXC datasheet, CY7C1474BV33-200BGXC pinout, CY7C1474BV33-200BGXC application, or CY7C1474BV33-200BGXC equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write granularity across eight 9-bit groups, JTAG boundary scan compliance, and synchronous self-timed write control - all critical for deterministic latency in packet buffering and header processing.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven through output registers synchronized to the same edge. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states.

It supports three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank decoding, asynchronous OE for output tri-state control, and Clock Enable (CEN) to suspend clock recognition without deselecting the device. Byte write select pins BWa–BWh independently control eight 9-bit data groups, enabling precise partial writes without read-modify-write cycles.

Key Specifications

Pinout & Package

Package: 209-ball FBGA (14 mm × 22 mm × 1.76 mm), RoHS-compliant, ball pitch 1.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1472BV33-200BAXI, the CY7C1474BV33-200BGXC provides native 72-bit width and finer 9-bit byte-write control, eliminating external data masking logic. Against AS7C3256B-20JC, it delivers >10× higher effective bandwidth and deterministic timing - essential for packet-processing and real-time control.

Availability

CY7C1474BV33-200BGXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and industrial real-time controller cache requiring stable component supply across extended production lifecycles.

Supply support for CY7C1474BV33-200BGXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing predictability.

CY7C1474BV33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in packet-switched infrastructure and deterministic real-time control applications.

FAQ

What is the function of the ADV/LD pin in CY7C1474BV33-200BGXC?

The ADV/LD pin controls the internal address counter behavior: when HIGH and CEN is active, it advances the burst address counter; when LOW, it loads a new base address from A0–A17. This dual-mode operation enables both sequential burst access and random-address loading without external address generation logic.

Does CY7C1474BV33-200BGXC support 2.5 V I/O operation?

Yes - the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interface with 2.5 V logic families such as SSTL-2. Core VDD remains fixed at 3.3 V ±0.3 V. I/O voltage level must be set at power-up and cannot be dynamically switched during operation.

How does the ZZ (Sleep) mode affect data retention and wake-up time?

In ZZ mode, the device enters deep sleep with standby current ≤120 µA while retaining all stored data. Wake-up is synchronous: after ZZ is deasserted, the device requires one valid CLK cycle with CEN active before accepting new commands - no additional stabilization delay is needed.

Can CY7C1474BV33-200BGXC be used in linear burst mode with a 16-bit controller?

No - the device is strictly 72-bit wide (1M × 72). A 16-bit controller would require external multiplexing or data-width conversion logic, which defeats the purpose of its zero-wait-state architecture. It is intended for native 72-bit or compatible bus widths (e.g., 36-bit with two devices).