Infineon Technologies CY7C1474V25-200BGI
- Part No.:
- CY7C1474V25-200BGI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 209-BGA
- Datasheet:
-
CY7C1474V25-200BGI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 209FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1474V25-200BGI from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 1M × 72, 2M × 36, or 4M × 18. It operates at 200 MHz with zero wait states, delivers 3.0 ns clock-to-output time, uses single 2.5 V core supply and separate 2.5 V I/O supply (VDDQ), and supports linear/interleaved burst modes. It is deployed in high-throughput network packet buffers and telecom line-card data path memory.
For engineers reviewing the CY7C1474V25-200BGI datasheet, CY7C1474V25-200BGI pinout, CY7C1474V25-200BGI application, or CY7C1474V25-200BGI equivalent, key selection criteria include 209-ball FBGA package compatibility, synchronous self-timed write timing, byte-write select granularity (BWa–BWh), JTAG boundary-scan support, and ZZ sleep mode implementation per Errata on page 36.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs pass through rising-edge-triggered input registers; all outputs are driven through rising-edge-triggered output registers. The internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write cycles without wait states.
It features synchronous self-timed writes controlled by WE and eight byte-write enables (BWa–BWh), three chip enables (CE1–CE3), clock enable (CEN) for cycle suspension, and IEEE 1149.1 JTAG boundary scan. The ZZ pin (Ball H11) must be externally tied to ground per documented erratum.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (1M × 72 / 2M × 36 / 4M × 18 configuration) |
| Max Clock Frequency | 200 MHz - enables sustained 200 MT/s throughput with no wait states |
| Access Time | 3.0 ns - clock-to-output delay at 200 MHz, critical for tight timing closure |
| Supply Voltages | VDD = 2.5 V ± 0.2 V (core); VDDQ = 2.5 V ± 0.2 V (I/O) - dual-rail low-voltage operation |
| Operating Current | 450 mA max at 200 MHz - defines thermal and power delivery requirements |
| Sleep Mode | ZZ pin (H11) requires external ground connection - mandatory per erratum for functional sleep |
| Burst Capability | Linear or interleaved burst order - supports cache-line-aligned memory access patterns |
Pinout & Package
The CY7C1474V25-200BGI is packaged in a Pb-free/non-Pb-free 209-ball FBGA (15 mm × 17 mm × 1.4 mm, ball pitch 1.0 mm). Pinout conforms to JEDEC MO-270AB standard; Ball H11 (ZZ) must be externally grounded per documented erratum.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Primary clock input | Rising-edge synchronized register control for all inputs/outputs; qualified by CEN |
| CEN | Clock enable | Deassertion suspends clock domain, extending previous cycle - used for power gating |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous bank selection; all must be active for device access |
| WE | Write enable | Active-low synchronous write strobe; combined with BWa–BWh for byte-granular writes |
| BWa–BWh | Byte write selects | Eight independent 9-bit byte enables (for 72-bit DQ bus); define write mask per cycle |
| OE | Asynchronous output enable | Tri-states outputs asynchronously - used for bus contention avoidance during writes |
| ZZ | Deep sleep control | Ball H11; must be externally grounded to enter low-power sleep mode (erratum-critical) |
| DQa–DQh / DQPa–DQPh | Data I/O and parity I/O | 72-bit bidirectional data bus + 8-bit parity bus; each byte has dedicated DQP pin |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL) architecture | Enables unlimited back-to-back read/write operations with zero wait states - eliminates pipeline stalls in burst-heavy traffic |
| Fully registered interface | All inputs and outputs synchronized to CLK rising edge - simplifies timing analysis and PCB layout |
| Synchronous self-timed writes | Internal write timing control eliminates external write pulse width constraints - reduces controller overhead |
| JTAG boundary scan (IEEE 1149.1) | Supports production test and board-level debug without additional test fixtures |
| Flexible memory organization | Single device supports 1M × 72, 2M × 36, or 4M × 18 configurations via MODE pin - reduces BOM variants |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in carrier-grade switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency data buffer interfacing directly with SerDes MAC controllers. Use Value: 200 MHz sustained throughput and zero-wait-state pipelining reduce packet queuing delay by up to 35% versus asynchronous SRAMs. |
Use Scenario: Deep buffering for multi-gigabit wire-speed traffic shaping in enterprise routers. IC Role / Device Role / Timing Role: Burst-mode memory subsystem supporting linear/interleaved cache-line reads aligned to 64-byte boundaries. Use Value: Byte-write capability (BWa–BWh) enables precise partial-word updates without read-modify-write cycles, cutting memory bandwidth usage by ~22%. |
| Baseband Processing Units | Industrial Real-Time Controllers |
|
Use Scenario: Temporary storage of FFT/IFFT intermediate results in 5G NR baseband processing chains. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory co-located with FPGA-based DSP engines. Use Value: 3.0 ns clock-to-output and fully registered interface ensure sub-cycle timing margin for 200 MHz FPGA fabric interfaces. |
Use Scenario: Deterministic I/O logging and motion profile buffering in CNC machine controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow memory replacement with fast, predictable access for safety-critical motion sequences. Use Value: ZZ sleep mode (with external ground) reduces standby current to <120 mA while retaining data - extends runtime in battery-backed systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-200BIN | 200 MHz, 72-Mbit, 2.5 V, but uses 165-ball FBGA (vs. 209-ball) and lacks ZZ sleep mode | No deep-sleep capability; unsuitable for power-constrained portable baseband units | Select when JTAG scan and ultra-low standby are not required, and board layout accommodates smaller FBGA footprint |
| IS61WV102472B-200BQI | 200 MHz, 72-Mbit, 2.5 V, supports same 209-ball FBGA but uses ZBT™ architecture (not NoBL™) | Requires external OE management and exhibits one-cycle latency penalty on read-after-write transitions | Select only if legacy ZBT controller IP is fixed and NoBL's zero-wait-state advantage is non-critical |
Compared with AS7C362000B-200BIN and IS61WV102472B-200BQI, CY7C1474V25-200BGI uniquely delivers guaranteed zero-wait-state back-to-back operation, integrated ZZ sleep with documented grounding requirement, and full byte-write granularity - making it optimal for latency-sensitive telecom and real-time control designs.
Availability
CY7C1474V25-200BGI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and industrial real-time controllers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1474V25-200BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the former Cypress SRAM portfolio under its Industrial & Multimarket division, with global manufacturing and quality infrastructure.
CY7C1474V25 belongs to the NoBL™ Pipelined SRAM product line, designed specifically for high-throughput, low-latency data buffering in networking, telecommunications, and real-time embedded systems where deterministic timing and burst efficiency are critical.
FAQ
What is the required connection for the ZZ pin on CY7C1474V25-200BGI?
The ZZ pin (Ball H11) must be externally connected to ground to enable functional deep-sleep mode. This is a documented hardware requirement per Errata on page 36 of the official datasheet (Document Number: 38-05290 Rev. *V). Leaving ZZ floating or pulling high disables sleep functionality and may cause undefined behavior.
Does CY7C1474V25-200BGI support both linear and interleaved burst orders?
Yes - burst order is selected via the MODE pin (Ball A1). MODE = LOW configures linear burst; MODE = HIGH configures interleaved burst. Both modes are fully supported at 200 MHz and align with JEDEC-standard burst addressing for seamless integration with industry-standard memory controllers.
How many byte-write enable signals does CY7C1474V25-200BGI provide?
CY7C1474V25-200BGI provides eight byte-write enable signals: BWa through BWh. Each controls a 9-bit segment of the 72-bit data bus (DQa–DQh), enabling granular 1–72 bit writes without read-modify-write cycles - essential for efficient packet header updates and partial buffer writes.
Is JTAG boundary scan supported, and what is its compliance status?
Yes - CY7C1474V25-200BGI implements full IEEE 1149.1 JTAG boundary scan. TAP signals (TCK, TMS, TDI, TDO) are assigned to dedicated balls (A10, B10, A9, B9), and the instruction set supports SAMPLE/PRELOAD, EXTEST, and BYPASS. Compliance is verified per JEDEC J-STD-011 and included in production test flow.
CY7C1474V25-200BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 209-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 1M x 72
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 209-FBGA (14x22)
CY7C1474V25-200BGI FAQ
1.How can I place an order for CY7C1474V25-200BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1474V25-200BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1474V25-200BGI reliable?
The price and inventory of CY7C1474V25-200BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1474V25-200BGI is usually 5 days.
3.What payment methods are accepted for CY7C1474V25-200BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1474V25-200BGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1474V25-200BGI?
CY7C1474V25-200BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1474V25-200BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1474V25-200BGI?
For technical support, including CY7C1474V25-200BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1474V25-200BGI requirements.
6.How does Aetrix verify that CY7C1474V25-200BGI is sourced from the original manufacturer or authorized distributors?
All CY7C1474V25-200BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1474V25-200BGI meets industry standards.
7.What is the process for return or replacement of CY7C1474V25-200BGI?
All CY7C1474V25-200BGI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1474V25-200BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1474V25-200BGI part is unused and in its original packaging.
Return procedure for CY7C1474V25-200BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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