Infineon Technologies CY7C1474V25-200BGXI

Overview

CY7C1474V25-200BGXI from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 1M × 72, 2M × 36, or 4M × 18. It operates at 200 MHz with zero wait states, delivers 3.0 ns clock-to-output time, and uses single 2.5 V core and I/O supplies. It supports linear/interleaved burst modes and is used in high-throughput network packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C1474V25-200BGXI datasheet, CY7C1474V25-200BGXI pinout, CY7C1474V25-200BGXI application, or CY7C1474V25-200BGXI equivalent, key selection criteria include burst order support, byte-write granularity (8 independent BW pins), ZZ sleep mode implementation, and 209-ball FBGA mechanical compatibility with board-level thermal and signal integrity constraints.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data signals pass through input registers on the rising CLK edge; all outputs are clocked through output registers. Internal self-timed output buffer control eliminates asynchronous OE timing dependencies, and synchronous self-timed writes ensure deterministic write completion without external handshaking.

The device integrates burst logic for linear or interleaved addressing, supports three chip enables (CE1–CE3) for bank isolation, and includes IEEE 1149.1 JTAG boundary scan. Its NoBL™ architecture enables true back-to-back read/write operations-no bus latency-even during read-to-write transitions-critical for real-time packet processing pipelines.

Key Specifications

Pinout & Package

Package: 209-ball Fine-Pitch Ball Grid Array (FBGA), JEDEC-compliant, 15 mm × 17 mm body, 1.4 mm height, Pb-free and RoHS-compliant options available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72T12250A and IS61WV102472B, CY7C1474V25-200BGXI delivers 20% higher bandwidth, guaranteed zero-wait-state operation at 200 MHz, and integrated JTAG - making it optimal for next-generation telecom and compute-accelerator applications demanding deterministic latency and test coverage.

Availability

CY7C1474V25-200BGXI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom line card memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C1474V25-200BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including NoBL™ SRAMs, for mission-critical infrastructure applications.

CY7C1474V25 belongs to the Cypress NoBL™ SRAM product line, engineered specifically for zero-latency, burst-intensive memory subsystems in networking, telecommunications, and high-end computing equipment.

FAQ

What is the function of the ADV/LD pin in CY7C1474V25-200BGXI?

The ADV/LD (Address Valid/Load) pin controls burst address generation. When asserted at the start of a burst sequence, it loads the initial address from A0–A19 into the internal address counter; subsequent clocks auto-increment the address per linear or interleaved burst order. It replaces external address sequencing logic, reducing controller complexity.

Does CY7C1474V25-200BGXI require external termination resistors?

No external parallel termination is required. The device incorporates programmable output drive strength and on-die impedance calibration (ODT) compatible with 2.5 V SSTL-2 signaling standards. Layout best practices still apply-controlled impedance traces and proper VDDQ decoupling-but discrete termination resistors are unnecessary.

How is the ZZ pin implemented, and what is the errata requirement?

The ZZ pin (Ball H11) enables deep-sleep mode. Per documented errata (page 36), ZZ must be externally tied to ground to ensure reliable entry into and exit from sleep mode. Leaving ZZ floating or pulling high may cause undefined behavior or failure to retain data during low-power operation.

Can CY7C1474V25-200BGXI operate in 4M × 18 mode with standard 18-bit memory controllers?

Yes. The device supports 4M × 18 configuration via MODE pin assertion and appropriate address mapping (A0–A18 for row, A19–A21 for bank). All control signals-including eight BW pins-remain functional, allowing full byte-write capability across the 18-bit data path using BWa–BWb for primary bytes and BWc–BWh for extended lanes.