Infineon Technologies CY7C1474V33-167BGC

Overview

CY7C1474V33 from Infineon Technologies (formerly Cypress) is a 72-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 1M × 72, operating at 167 MHz with 3.4 ns clock-to-output delay, single 3.3 V core supply, and 3.3 V/2.5 V I/O support-used in high-throughput network packet buffering and telecom line card data path staging.

For engineers reviewing the CY7C1474V33 datasheet, CY7C1474V33 pinout, CY7C1474V33 application, or CY7C1474V33 equivalent, key selection criteria include burst mode compatibility (linear/interleaved), byte-write granularity (8 × 9-bit), ZZ sleep mode implementation, and FBGA-209 mechanical fit for dense PCB layouts.

Technical Context

The CY7C1474V33 implements fully registered synchronous interfaces: all address, control, and data signals are latched on the rising edge of CLK; output registers ensure deterministic timing, eliminating asynchronous OE dependency. Its NoBL™ logic enables true back-to-back read/write operations without wait states.

Burst capability supports both linear and interleaved orders; write operations use on-chip self-timed circuitry synchronized to CLK, while eight independent byte write selects (BWSa–BWSh) enable precise 9-bit sub-word writes within the 72-bit data bus.

Key Specifications

Pinout & Package

Package: 209-ball Fine-Pitch Ball Grid Array (FBGA), 14 mm × 22 mm body, 0.8 mm ball pitch, non-RoHS-compliant (non Pb-free), thermal pad not exposed.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2135L16PF and IS61WV102472BLL-167B, the CY7C1474V33 uniquely combines ZZ sleep mode, interleaved burst support, and 3.3 V core compatibility - critical for telecom infrastructure where power-aware burst scheduling and protocol alignment are mandatory.

Availability

CY7C1474V33 is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and radar signal processing requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1474V33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and high-performance memory solutions.

The CY7C1474V33 belongs to Infineon's legacy Cypress synchronous SRAM product line, designed specifically for high-throughput, low-latency data buffering in carrier-grade networking and wireless infrastructure equipment.

FAQ

Is the CY7C1474V33 pin-compatible with ZBT SRAMs?

Yes - the CY7C1474V33 is functionally equivalent and pin-compatible with standard ZBT SRAMs, supporting identical burst protocols (linear/interleaved), clocking schemes, and control signal timing. This enables drop-in replacement in existing ZBT-based designs without layout changes.

What is the required connection for the ZZ pin?

The ZZ pin (Ball P6 on the 209-ball FBGA) must be externally tied to ground per documented errata. Leaving it floating or pulling high violates specification and may cause undefined sleep behavior or increased standby current beyond the rated 120 mA.

Does the CY7C1474V33 support 2.5 V I/O operation?

Yes - the VDDQ supply accepts 2.5 V ±0.2 V, allowing direct interfacing with 2.5 V logic families. Core VDD remains fixed at 3.3 V ±0.3 V; VDDQ and VDD must be powered independently with appropriate decoupling.

How many byte write lanes does the CY7C1474V33 provide?

The CY7C1474V33 provides eight independent byte write select inputs (BWSa through BWSh), each controlling a 9-bit segment of the 72-bit data bus. This enables granular 9-bit writes without read-modify-write cycles or bus contention.