Infineon Technologies CY7C1480BV25-167AXC

Overview

CY7C1480BV25-167AXC from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with 2.5 V core/I/O, 167 MHz maximum clock frequency, 3.4 ns clock-to-output delay, JEDEC-compliant TQFP-100 package, and support for Intel Pentium®-compatible interleaved or linear burst sequences - deployed in high-speed CPU cache subsystems requiring deterministic timing and byte-selectable writes.

For engineers reviewing the CY7C1480BV25-167AXC datasheet, CY7C1480BV25-167AXC pinout, CY7C1480BV25-167AXC application, or CY7C1480BV25-167AXC equivalent, key selection criteria include synchronous burst address generation via ADV/ADSP/ADSC, registered I/O timing, ZZ sleep mode retention, IEEE 1149.1 JTAG boundary scan, and dual chip-enable architecture for multi-bank memory systems.

Technical Context

The device implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC inputs to generate sequential addresses during burst reads/writes. All synchronous inputs - including A[1:0], CE1/CE2/CE3, BWA–BWD, BWE, GW, OE, and CLK - are registered on the rising edge of CLK, enabling precise pipelined timing control.

It supports byte-write operations via eight synchronous BWX inputs qualified by BWE, plus global write override via GW. Output enable (OE) operates asynchronously, while ZZ provides asynchronous sleep entry with data retention - both independent of clock domain. The memory array uses 2.5 V CMOS core logic with separate VDDQ/VSSQ I/O supply rails for noise isolation.

Key Specifications

Pinout & Package

Package: 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm, JEDEC-standard Pb-free, with separate VDDQ/VSSQ I/O power/ground pins and internal ZZ pull-down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L16PF and IS61WV102436B, CY7C1480BV25-167AXC uniquely combines 2.5 V operation, ZZ sleep retention, JTAG testability, and selectable burst modes - making it optimal for space-constrained, high-reliability, and legacy-compatible cache subsystems.

Availability

CY7C1480BV25-167AXC is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffers, industrial motion controllers, and avionics data acquisition systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1480BV25-167AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1480BV25 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for deterministic-latency cache and buffer applications in x86-compatible and real-time embedded systems requiring burst-mode efficiency and JTAG testability.

FAQ

What is the function of the MODE pin on CY7C1480BV25-167AXC?

The MODE pin selects between Intel Pentium®-compatible interleaved burst addressing (MODE = LOW) and linear burst addressing (MODE = HIGH). This configuration is sampled at power-up or reset and determines how the internal two-bit burst counter increments addresses during burst cycles - critical for matching legacy processor cache controller protocols without external logic.

Can CY7C1480BV25-167AXC operate with mixed voltage supplies?

No. The device requires strictly 2.5 V ± 0.2 V on both VDD (core) and VDDQ (I/O) rails. VSSQ is the dedicated I/O ground for TQFP packages. Applying 3.3 V to any supply pin exceeds absolute maximum ratings and risks permanent damage. The FBGA variant shares VSS for core and I/O, but still mandates 2.5 V supplies.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode with full data retention and reduced current draw (≤120 mA standby). Wake-up occurs synchronously on the first valid CLK edge after ZZ returns LOW - no additional stabilization delay is required, and the next access proceeds normally within standard tCO timing.

Is JTAG boundary scan functional during normal SRAM operation?

Yes. IEEE 1149.1 JTAG is fully operational during active memory use. The TAP controller runs independently of the SRAM core, allowing real-time interconnect testing without halting data transfers. Boundary scan cells monitor all I/O pins, including CLK, ADSP, and DQ lines, and support INTEST and EXTEST instructions per JTAG specification.