Infineon Technologies CY7C1480BV25-200BZXC

Overview

CY7C1480BV25-200BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) pipelined synchronous SRAM with 2.5 V core/I/O supply, 200 MHz maximum clock frequency, 3.0 ns clock-to-output time, registered address/data paths, and JEDEC-standard Pb-free 100-pin TQFP packaging. It serves as high-speed secondary cache memory in Pentium-class processor systems requiring deterministic burst access and low-latency read/write cycles.

For engineers reviewing the CY7C1480BV25-200BZXC datasheet, CY7C1480BV25-200BZXC pinout, CY7C1480BV25-200BZXC application, or CY7C1480BV25-200BZXC equivalent, key selection criteria include synchronous burst timing compliance, byte-write granularity control via BWA–BWE and GW, dual-address-strobe support (ADSP/ADSC), ZZ sleep mode behavior, and TQFP thermal/mechanical fit for legacy compute modules.

Technical Context

The device implements a two-bit wraparound burst counter synchronized to CLK's rising edge, supporting both Intel Pentium interleaved and linear burst sequences selected via the MODE pin. All synchronous inputs-address (A[1:0]), chip enables (CE1/CE2/CE3), burst controls (ADSP/ADSC/ADV), and write enables (BWE/GW)-are registered on the same clock edge.

Read operations deliver data through output registers with 3.0 ns tCO at 200 MHz; writes use on-chip self-timed logic requiring one or two clock cycles depending on ADSP/ADSC initiation and GW/BWE state. Asynchronous OE and ZZ pins enable immediate output tristate and non-time-critical sleep entry without clock dependency.

Key Specifications

Pinout & Package

Package: 100-pin thin quad flat pack (TQFP), JEDEC-standard Pb-free, 14 mm × 20 mm body, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102436BLL-200BLI and MT48LC32M36A2-75:G, CY7C1480BV25-200BZXC uniquely combines true synchronous SRAM determinism, integrated ZZ sleep, and Pentium-burst compatibility-making it irreplaceable in legacy x86 cache designs where timing predictability and power-state fidelity are non-negotiable.

Availability

CY7C1480BV25-200BZXC is available at Aetrix Electronics and suitable for industrial motion controllers, avionics data recorders, and legacy Pentium-based embedded computing platforms requiring stable component supply and long-term obsolescence mitigation.

Supply support for CY7C1480BV25-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1480BV25 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for CPU cache and burst-buffer applications demanding sub-ns timing precision, multi-strobe address capture, and seamless integration with x86-compatible bus protocols.

FAQ

What is the function of the MODE pin on CY7C1480BV25-200BZXC?

The MODE pin selects the burst address sequence: when LOW, it configures the internal two-bit counter for Intel Pentium interleaved burst order (0,2,1,3); when HIGH, it enables linear burst order (0,1,2,3). This selection is latched on the first clock edge after power-up or reset and remains static until next power cycle-no runtime reconfiguration is supported.

Can CY7C1480BV25-200BZXC operate with mixed voltage supplies (e.g., 2.5 V core and 3.3 V I/O)?

No. The device requires a single 2.5 V ±0.2 V supply for both core (VDD) and I/O (VDDQ) domains. VDDQ must be tied to the same 2.5 V rail as VDD; applying 3.3 V to VDDQ violates absolute maximum ratings and risks permanent damage to output drivers and input receivers.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH immediately places the device in sleep mode regardless of current burst state; all internal clocks halt, outputs go high-impedance, and core logic enters retention. Burst operations in progress are terminated-not completed-and must be reinitiated after ZZ returns LOW and a minimum recovery time (tZZH = 5 ns) elapses before next CLK edge.

Is JTAG boundary scan functional when ZZ is asserted HIGH?

Yes. IEEE 1149.1 boundary scan remains fully operational during ZZ sleep mode because the TAP controller and scan chain are powered by VDD (core supply), which remains active. Test access port (TCK, TMS, TDI, TDO) signals retain full functionality, enabling in-system test even during low-power retention.