Infineon Technologies CY7C1480BV33-167BZXC
- Part No.:
- CY7C1480BV33-167BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1480BV33-167BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,465
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1480BV33-167BZXC from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM with 2M × 36 organization, supporting 167 MHz bus operation (tCO = 3.4 ns), 3.3 V core supply, and 2.5/3.3 V I/O compatibility. It implements registered address/data paths, synchronous self-timed writes, and user-selectable Intel Pentium®-compatible interleaved or linear burst sequences for high-speed cache applications in networking line cards and telecom baseband processors.
For engineers reviewing the CY7C1480BV33-167BZXC datasheet, CY7C1480BV33-167BZXC pinout, CY7C1480BV33-167BZXC application, or CY7C1480BV33-167BZXC equivalent, key selection criteria include burst counter mode control (MODE pin), byte-write granularity (BWA–BWD + BWE), dual-address-strobe support (ADSP/ADSC), ZZ sleep mode behavior, and JEDEC-compliant TQFP-100 package mechanical and thermal specifications.
Technical Context
This SRAM uses a positive-edge-triggered clock (CLK) to register all synchronous inputs-including addresses (A[1:0]), chip enables (CE1/CE2/CE3), burst controls (ADSC/ADSP/ADV), and write enables (BWX/GW)-enabling deterministic pipelined access timing. The on-chip 2-bit wraparound burst counter generates sequential addresses during burst reads/writes when ADV is asserted.
It supports asynchronous OE-controlled output tri-state and ZZ-controlled low-power sleep mode with data retention. Byte write operations are enabled only when BWE is LOW and one or more BWX pins are LOW; GW overrides all BWX signals to enable full-word writes. All I/Os meet JESD8-5 voltage thresholds for 2.5 V and 3.3 V operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst throughput and system timing margin |
| Access Time (tCO) | 3.4 ns - clock-to-output delay under 167 MHz conditions; determines read pipeline latency |
| Core Supply Voltage | 3.3 V ± 0.3 V - powers internal logic and memory array; requires dedicated regulation |
| I/O Supply Range | 2.5 V or 3.3 V - supports mixed-voltage system interfacing without level shifters |
| Burst Mode Control | MODE pin - selects Intel Pentium® interleaved vs. linear burst address sequence |
| Sleep Mode | ZZ pin (active HIGH) - reduces standby current to ≤120 mA while preserving data |
Pinout & Package
Package: JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm body, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[1:0] | Synchronous Address Input | Sampled at CLK rising edge when ADSP/ADSC active; loaded into 2-bit burst counter |
| ADSP / ADSC | Synchronous Address Strobe | Processor- or controller-initiated address capture; ADSP takes priority if both asserted |
| ADV | Synchronous Address Advance | Triggers automatic increment of burst counter on CLK rising edge |
| BWA–BWD | Synchronous Byte Write Select | Active-LOW per-byte enable; qualified by BWE to select 1–4 bytes for write |
| GW | Synchronous Global Write | Active-LOW override that forces full 36-bit write regardless of BWX states |
| OE | Asynchronous Output Enable | Active-LOW; controls I/O direction and tri-state; masked during first read clock after deselect |
| ZZ | Asynchronous Sleep Control | Active-HIGH; places device in low-power state with data retention; internal pull-down |
| VDDQ / VSSQ | I/O Power / Ground | Dedicated 2.5/3.3 V I/O rail and return path-separate from core VDD/VSS in TQFP |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined synchronous interface | Registered inputs/outputs eliminate external latch timing constraints and simplify PCB layout |
| User-selectable burst sequence | MODE pin configures either Pentium®-interleaved or linear addressing-no firmware change required |
| Byte-write granularity | Four independent byte-enable lines (BWA–BWD) + BWE allow precise 8-bit, 16-bit, or 32-bit writes |
| Synchronous self-timed writes | On-chip write timing eliminates need for external write pulse generation or wait-state insertion |
| JTAG boundary scan (IEEE 1149.1) | Enables in-system test and debug without additional test fixtures or board-level probing |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G/25G Ethernet switch ASICs requiring low-latency, burst-capable memory for ingress/egress queues. IC Role / Device Role / Timing Role: Secondary cache SRAM providing pipelined 3-1-1-1 burst read/write access synchronized to switch fabric clock domain. Use Value: 3.4 ns tCO and 167 MHz clock rate enable sub-6 ns effective read latency across four consecutive words, matching SERDES-aligned data streams. |
Use Scenario: Real-time FFT and channel estimation buffers in LTE/5G massive MIMO baseband units where deterministic burst access minimizes DMA overhead. IC Role / Device Role / Timing Role: Burst-mode SRAM interfaced directly to DSP DMA controllers using ADSP/ADV handshake protocol. Use Value: Interleaved burst mode matches Pentium-style processor burst patterns used in legacy DSP co-processors, eliminating address calculation logic. |
| Industrial PLC Data Logging | Avionics Display Frame Buffer |
|
Use Scenario: Cyclic data acquisition and timestamped logging in ruggedized programmable logic controllers operating in extended temperature environments. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding sensor history before flash commit; powered by isolated 3.3 V rail. Use Value: ZZ sleep mode reduces standby current to ≤120 mA during idle cycles while preserving logged data integrity without backup battery. |
Use Scenario: Dual-port frame buffer for mission-critical cockpit display systems requiring guaranteed pixel update timing and EMI resilience. IC Role / Device Role / Timing Role: Synchronous SRAM acting as write port for graphics engine and read port for display controller via separate CE1/CE2 bank selection. Use Value: Separate ADSP (graphics write) and ADSC (display read) strobes prevent bus contention and ensure deterministic 167 MHz pixel fetch timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined sync SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102436BLL-167BLI | 1024K × 36 organization, same 167 MHz speed grade, but uses 3.3 V-only I/O (no 2.5 V support) | Lacks MODE-selectable burst sequence; fixed linear burst only | Preferred when system uses uniform 3.3 V I/O and does not require Pentium®-interleaved addressing |
| MT55LSD25636DZ-167:J | 256K × 36 density, lower power (320 mA max operating current), no ZZ sleep mode | Supports JTAG but lacks ADV/ADSC dual-strobe architecture; simpler address control | Selected for space-constrained designs where full 72 Mbit density is unnecessary and ultra-low power dominates |
Compared with IS61WV102436BLL-167BLI and MT55LSD25636DZ-167:J, the CY7C1480BV33-167BZXC uniquely combines 2M × 36 depth, dual-strobe (ADSP/ADSC) flexibility, and MODE-configurable burst sequencing-critical for legacy processor coherency and multi-master bus arbitration.
Availability
CY7C1480BV33-167BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and industrial PLC data logging requiring stable component supply, long-lifecycle support, and Pb-free TQFP packaging.
Supply support for CY7C1480BV33-167BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1480BV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable cache and buffer applications in telecom infrastructure and real-time embedded systems.
FAQ
What is the function of the MODE pin on CY7C1480BV33-167BZXC?
The MODE pin selects the burst address sequence: logic HIGH configures Intel Pentium®-compatible interleaved addressing (e.g., 0, 2, 4, 6), while logic LOW enables linear addressing (e.g., 0, 1, 2, 3). It is sampled at power-up and latched; changing it mid-operation has no effect until the next burst initiation.
Can CY7C1480BV33-167BZXC operate with 2.5 V I/O while using 3.3 V core supply?
Yes. The device supports independent 3.3 V core (VDD) and 2.5 V or 3.3 V I/O (VDDQ) supplies. In TQFP packages, VDDQ and VSSQ are dedicated pins; proper decoupling (0.1 µF ceramic per VDDQ/VSSQ pair) is required to maintain signal integrity and meet JESD8-5 thresholds.
How does the ZZ sleep mode affect data retention and wake-up timing?
When ZZ is driven HIGH, the device enters non-time-critical sleep mode with data retained and core current reduced to ≤120 mA. Wake-up occurs synchronously on the next CLK rising edge after ZZ returns LOW; no additional stabilization delay is required before issuing ADSP/ADSC.
Is the CY7C1480BV33-167BZXC pin-compatible with CY7C1482BV33-167BZXC?
No. Although both share the same speed grade and FBGA option, CY7C1480BV33 is 2M × 36 (72 Mbit) in TQFP-100 or FBGA-165, while CY7C1482BV33 is 4M × 18 (72 Mbit) with different pin mapping-especially for address bits and DQP lines-and lacks certain TQFP-specific pins like VDDQ/VSSQ.
CY7C1480BV33-167BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1480BV33-167BZXC FAQ
1.How can I place an order for CY7C1480BV33-167BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1480BV33-167BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1480BV33-167BZXC reliable?
The price and inventory of CY7C1480BV33-167BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1480BV33-167BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1480BV33-167BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1480BV33-167BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1480BV33-167BZXC?
CY7C1480BV33-167BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1480BV33-167BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1480BV33-167BZXC?
For technical support, including CY7C1480BV33-167BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1480BV33-167BZXC requirements.
6.How does Aetrix verify that CY7C1480BV33-167BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1480BV33-167BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1480BV33-167BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1480BV33-167BZXC?
All CY7C1480BV33-167BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1480BV33-167BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1480BV33-167BZXC part is unused and in its original packaging.
Return procedure for CY7C1480BV33-167BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1480BV33-167BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

