Infineon Technologies CY7C1480BV33-250BZI

Overview

CY7C1480BV33-250BZI from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM with 2M × 36 organization, supporting 250 MHz bus operation, 3.0 ns clock-to-output delay, and 3.3 V core / 2.5 V or 3.3 V I/O supply. It implements registered address/data paths, synchronous self-timed writes, and Intel Pentium®-compatible interleaved or linear burst sequences for high-speed cache applications in networking line cards.

For engineers reviewing the CY7C1480BV33-250BZI datasheet, CY7C1480BV33-250BZI pinout, CY7C1480BV33-250BZI application, or CY7C1480BV33-250BZI equivalent, key selection criteria include burst counter mode control (MODE pin), byte-write granularity (BWA–BWD + BWE), dual-strobe address capture (ADSP/ADSC), ZZ sleep enable, and JEDEC-compliant 100-pin TQFP packaging.

Technical Context

This SRAM uses a positive-edge-triggered CLK to register all synchronous inputs-including addresses (A[1:0] fed to a 2-bit wraparound burst counter), chip enables (CE1/CE2/CE3), burst controls (ADSP, ADSC, ADV), and write enables (BWX, BWE, GW). Output data is registered on the same clock edge, enabling deterministic 3.0 ns tCO timing at 250 MHz.

It supports both processor-initiated (ADSP) and controller-initiated (ADSC) address strobes, with priority given to ADSP when both are active. Burst addressing is advanced by ADV, while MODE selects between Intel interleaved or linear sequences. Asynchronous OE and ZZ pins provide output tri-state control and low-power sleep without clock dependency.

Key Specifications

Pinout & Package

The CY7C1480BV33-250BZI is packaged in a JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm, with exposed thermal pad (not electrically connected). Pin 1 is top-left corner, marked by dot or notch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102436BLL-15BLI, CY7C1480BV33-250BZI delivers 16.7× higher bandwidth (250 MHz vs. 15 ns ≈ 67 MHz effective) and integrated burst control, while MT28EW01GABA1HPC-0SIT serves entirely different use cases with no timing or interface compatibility.

Availability

CY7C1480BV33-250BZI is available at Aetrix Electronics and suitable for high-speed network line cards, processor cache buffers, telecom control plane processors, and radar signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1480BV33-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on reliability and signal integrity.

The CY7C1480BV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented cache and buffer applications in wired infrastructure and embedded computing systems.

FAQ

What is the function of the MODE pin on CY7C1480BV33-250BZI?

The MODE pin selects the burst address sequence: when sampled LOW at the first rising CLK edge of a burst, it configures linear addressing (0,1,2,3); when HIGH, it enables Intel Pentium®-compatible interleaved addressing (0,2,1,3). This setting remains active until reset or power cycle and must be stable before burst initiation.

Can CY7C1480BV33-250BZI operate with 2.5 V I/O while using 3.3 V core supply?

Yes - the device supports independent 3.3 V core (VDD) and 2.5 V or 3.3 V I/O (VDDQ) supplies. VDDQ must be set to match the host bus voltage, and all I/O pins (DQx, DQP x, OE, etc.) are JESD8-5 compliant for 2.5 V operation. Core logic remains powered at 3.3 V regardless of VDDQ choice.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with data retention guaranteed and CMOS standby current reduced to ≤120 mA. Data remains valid indefinitely as long as VDD and VDDQ are maintained. The pin has an internal pull-down, so leaving it unconnected defaults to normal operation (ZZ = LOW).

Is CY7C1480BV33-250BZI compatible with CY7C1482BV33-250BZI in the same footprint?

No - although both share the 165-ball FBGA option, CY7C1480BV33-250BZI is specified for 2M × 36 (72 Mbit) organization and is offered in 100-pin TQFP (BZI suffix), whereas CY7C1482BV33 is 4M × 18 (72 Mbit) with different pin mapping and no TQFP variant. They are functionally similar but not drop-in replacements.