Infineon Technologies CY7C1480BV33-250BZXC

Overview

CY7C1480BV33-250BZXC from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM with 2M × 36 organization, supporting 250 MHz bus operation, 3.0 ns clock-to-output delay, and 3.3 V core / 2.5–3.3 V I/O voltage flexibility. It implements registered address/data paths, synchronous self-timed writes, and user-selectable Intel Pentium®-compatible interleaved or linear burst sequences for high-speed cache applications in networking line cards and embedded controllers.

For engineers reviewing the CY7C1480BV33-250BZXC datasheet, CY7C1480BV33-250BZXC pinout, CY7C1480BV33-250BZXC application, or CY7C1480BV33-250BZXC equivalent, key selection criteria include burst mode configuration (MODE pin), byte-write granularity (BWA–BWD + BWE), synchronous chip enable timing (CE1/CE2/CE3), ZZ sleep mode behavior, and TQFP-100 vs FBGA-165 package compatibility.

Technical Context

This SRAM uses a positive-edge-triggered CLK to register all synchronous inputs-including addresses (A1:A0 fed to a 2-bit wraparound burst counter), byte write controls (BWA–BWD, BWE, GW), and address strobes (ADSP/ADSC/ADV)-enabling deterministic pipelined access. The internal burst counter increments on ADV assertion and supports both interleaved and linear address sequences based on the MODE pin state at initialization.

Asynchronous OE enables tri-state control of DQ/DQP I/Os independent of clock phase, while ZZ provides non-time-critical sleep mode with data retention. All outputs are JEDEC JESD8-5 compliant, and I/O power (VDDQ) is independently configurable for 2.5 V or 3.3 V operation-critical for mixed-voltage system interfacing.

Key Specifications

Pinout & Package

The CY7C1480BV33-250BZXC is packaged in a Pb-free 100-pin thin quad flat pack (TQFP), 14 × 20 × 1.4 mm, with exposed thermal pad (JEDEC MO-187AA). Pin functions are validated per Cypress Document 001-15145 Rev. *L, pages 4–6.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pipelined synchronous SRAM applications.

Compared with AS7C3256B-25JCIN and IS61WV102436BLL-250BLI, the CY7C1480BV33-250BZXC uniquely combines 250 MHz pipelining, selectable burst modes, ZZ sleep, and JTAG testability - making it the only choice for high-reliability, high-bandwidth cache subsystems requiring both performance and debug readiness.

Availability

CY7C1480BV33-250BZXC is available at Aetrix Electronics and suitable for networking line cards, industrial PLCs, avionics data recorders, and medical imaging frame buffers requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for CY7C1480BV33-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on reliability and system-level integration.

The CY7C1480BV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for secondary cache and burst-buffer applications in microprocessor- and FPGA-based systems demanding sub-4 ns access and deterministic timing.

FAQ

What is the function of the MODE pin, and how is it sampled?

The MODE pin selects interleaved (Intel Pentium®) or linear burst address sequencing. It is sampled only once at power-up or reset, latching the burst mode configuration permanently until the next reset event. No runtime reconfiguration is supported, ensuring deterministic burst behavior during operation.

Can CY7C1480BV33-250BZXC operate with 2.5 V I/O while core remains at 3.3 V?

Yes. VDDQ is independently supplied and accepts either 2.5 V or 3.3 V, while VDD must be 3.3 V ± 0.3 V. This dual-supply architecture allows direct interfacing with 2.5 V FPGAs or ASICs without level shifters, preserving signal integrity and reducing BOM count.

How does the ZZ sleep mode affect data retention and wake-up timing?

In ZZ mode (pin HIGH), the device enters a low-power retention state drawing ≤120 µA, with all stored data preserved. Wake-up is asynchronous and complete within one CLK cycle after ZZ returns LOW - no additional stabilization delay is required before resuming normal operation.

Is JTAG boundary scan enabled by default, and can it be disabled?

JTAG is enabled by default and compliant with IEEE 1149.1. It can be disabled via the TAP instruction "IDCODE" followed by "BYPASS", or by holding TMS HIGH for five TCK cycles during power-up - a hardware-based disable method documented in Section 11 of the datasheet.