Infineon Technologies CY7C1480V25-200BZC

Overview

CY7C1480V25 from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM configured as 2M × 36, operating at 200 MHz with 2.5 V core supply and 2.5/1.8 V I/O support. It features registered inputs/outputs, 3.0 ns clock-to-output delay, JTAG boundary scan, and user-selectable Intel Pentium®-compatible or linear burst sequences. Used in high-speed secondary cache subsystems for x86-based embedded controllers and networking line cards.

For engineers reviewing the CY7C1480V25 datasheet, CY7C1480V25 pinout, CY7C1480V25 application, or CY7C1480V25 equivalent, key selection criteria include burst mode compatibility (interleaved vs. linear), byte-write granularity (four independent 9-bit byte lanes), synchronous self-timed write timing, and dual-voltage I/O flexibility for interfacing with 1.8 V or 2.5 V logic domains.

Technical Context

The CY7C1480V25 implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC signals, enabling deterministic address progression during burst reads/writes. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, ensuring precise setup/hold timing alignment across high-frequency bus cycles.

It supports four-byte-wide write operations via BWA–BWD and BWE, with GW overriding all byte enables for full-word writes. Output enable (OE) is asynchronous, allowing immediate tri-state control independent of clock phase, while ZZ provides non-time-critical sleep mode with data retention and internal pull-down.

Key Specifications

Pinout & Package

Available in JEDEC-standard lead-free 100-pin TQFP (14 × 14 mm) and 165-ball FBGA (15 × 17 mm, 1.4 mm height). Both packages support identical pin functions and signal assignments per datasheet Rev. *G.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102436BLL-10BLI and MT28EW01GABA1HPC-0SIT, the CY7C1480V25 uniquely delivers 200 MHz parallel interface performance with programmable burst sequencing and true synchronous pipelining - essential for legacy x86 cache and high-throughput packet buffering where deterministic latency and bus compatibility are mandatory.

Availability

CY7C1480V25 is available at Aetrix Electronics and suitable for secondary cache subsystems, network packet buffers, baseband signal processing stages, and radar data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C1480V25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1480V25 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically to replace asynchronous SRAMs in CPU cache and bandwidth-intensive buffering applications demanding sub-ns timing predictability and burst efficiency.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst order: tied to GND for linear burst sequence, or to VDD/floating for Intel Pentium®-compatible interleaved sequence. It is a static strap pin with internal pull-up; must remain stable during operation and cannot be toggled dynamically. Incorrect MODE configuration causes misaligned burst addresses and data corruption in cache line fills.

Can CY7C1480V25 operate with only 1.8 V applied to VDDQ while VDD remains at 2.5 V?

Yes - VDDQ and VDD are fully independent power domains. VDDQ = 1.8 V enables direct interface to 1.8 V logic (e.g., FPGA I/O banks), while VDD = 2.5 V powers the core memory array and registers. VSSQ must be connected to the same ground as the 1.8 V logic domain, and VSS to the 2.5 V core ground, with proper separation per datasheet layout guidelines.

How does the ZZ sleep mode affect timing and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep: core clocks halt, I/O drivers disable, but data is retained indefinitely without refresh. Exit time from ZZ is asynchronous and not clock-dependent; outputs return to functional state within 100 ns after ZZ returns LOW, with no required stabilization delay before first access.

What distinguishes ADSP from ADSC, and when should each be used?

ADSP (Address Strobe Processor) and ADSC (Address Strobe Controller) both capture addresses and load the burst counter on CLK rise, but ADSP has priority: if both are active, only ADSP is recognized. ADSP is intended for CPU-initiated accesses; ADSC for DMA or peripheral controller use. CE1 must be active for either to take effect, and ADSP is ignored if CE1 is HIGH.