Infineon Technologies CY7C1480V33-200AXCT

Overview

CY7C1480V33-200AXCT from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM configured as 2M × 36, operating at 200 MHz with 3.3 V core supply and 2.5/3.3 V I/O compatibility. It features registered inputs/outputs, synchronous self-timed writes, user-selectable Intel Pentium®-compatible burst modes, and IEEE 1149.1 JTAG boundary scan - deployed in high-speed CPU cache subsystems and network packet buffering.

For engineers reviewing the CY7C1480V33-200AXCT datasheet, CY7C1480V33-200AXCT pinout, CY7C1480V33-200AXCT application, or CY7C1480V33-200AXCT equivalent, key selection criteria include burst timing compliance (3.0 ns tCO), byte-write granularity (BWA–BWD + BWE), dual-strobe address capture (ADSP/ADSC), ZZ sleep mode support, and JEDEC-standard TQFP-100 packaging for board-level signal integrity.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC to generate sequential addresses during pipelined read/write cycles. All address, data, and control inputs (CE1/CE2/CE3, GW, BWE, BWX) are registered on the rising edge of CLK, enabling deterministic 200 MHz bus operation.

The device supports both interleaved (Pentium®) and linear burst sequences selected via the MODE pin, with asynchronous OE for output tri-state control and asynchronous ZZ for low-power sleep. I/O voltage flexibility (2.5 V or 3.3 V) and separate VDDQ/VSSQ rails ensure compatibility with mixed-voltage memory subsystems.

Key Specifications

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin Thin Quad Flat Pack (TQFP), 14 × 20 × 1.4 mm, with exposed thermal pad (not electrically connected). Pin pitch: 0.5 mm. Compatible with standard reflow profiles per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1480V33-200AXCT uniquely integrates burst counter logic, dual-address strobes, and IEEE 1149.1 scan - enabling drop-in replacement in Pentium®-based cache controllers without redesigning timing or test infrastructure.

Availability

CY7C1480V33-200AXCT is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffering, industrial motion control, and avionics data acquisition requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1480V33-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1480V33-200AXCT belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-jitter memory subsystems in CPU caches and real-time networking equipment.

FAQ

What is the function of the MODE pin on CY7C1480V33-200AXCT?

The MODE pin selects between Intel Pentium®-interleaved and linear burst address sequences. When MODE = LOW, the device uses interleaved addressing (0, 2, 4, 6); when MODE = HIGH, it uses linear addressing (0, 1, 2, 3). This configuration is sampled at power-up and remains latched until reset or power cycle.

Can CY7C1480V33-200AXCT operate with 2.5 V I/O while maintaining 3.3 V core supply?

Yes. The device supports independent VDDQ (2.5 V or 3.3 V) and VDD (3.3 V ±0.3 V) supplies. VDDQ powers all I/O buffers and must be stable before VDD ramps; this allows direct interfacing with 2.5 V FPGAs or ASICs while retaining full 3.3 V core performance and timing margins.

How does the ZZ sleep mode affect data retention and wake-up timing?

In ZZ mode (pin driven HIGH), the SRAM enters a low-power retention state with core current ≤120 mA. Data is preserved indefinitely as long as VDD remains within specification. Wake-up is asynchronous and complete within one CLK cycle after ZZ returns LOW - no additional stabilization delay is required.

Is JTAG boundary scan enabled by default on CY7C1480V33-200AXCT?

Yes. IEEE 1149.1 JTAG is factory-enabled and active whenever TCK, TMS, and TDI are driven per JTAG protocol. The TAP controller operates independently of memory function and supports instruction register loading, data register scan, and IDCODE read - no configuration fuse or software initialization is needed.