Infineon Technologies CY7C1481BV33-133BGXI

Overview

CY7C1481BV33-133BGXI from Infineon Technologies (formerly Cypress) is a 72-Mbit (2M × 36) synchronous flow-through SRAM with 133 MHz bus operation, 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), and dual-voltage I/O support (2.5 V or 3.3 V VDDQ). It implements a 2-bit on-chip burst counter, supports Intel Pentium®-compatible interleaved or linear burst sequences via MODE pin, and targets high-speed secondary cache in microprocessor systems.

For engineers reviewing the CY7C1481BV33-133BGXI datasheet, CY7C1481BV33-133BGXI pinout, CY7C1481BV33-133BGXI application, or CY7C1481BV33-133BGXI equivalent, key selection criteria include synchronous burst timing compliance, JEDEC-standard TQFP/BGA package compatibility, VDD/VDDQ voltage separation, JTAG boundary-scan capability (BGA only), and ZZ sleep mode behavior.

Technical Context

The device uses a positive-edge-triggered CLK to register all synchronous inputs-including addresses (A[1:0] feeding a 2-bit wraparound burst counter), chip enables (CE1/CE2/CE3), burst controls (ADSP/ADSC/ADV), and write enables (BWx/BWE/GW). Burst address advancement is fully synchronous and controlled by ADV assertion on CLK rise.

Asynchronous signals OE and ZZ operate independently of CLK: OE enables tri-state output control during read cycles, while ZZ places the device in low-power sleep with data retention. The SRAM supports both processor-initiated (ADSP) and controller-initiated (ADSC) burst starts, with ADSP taking priority when both are active.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 119-ball BGA (package code BGX) and 100-pin TQFP. This part number (CY7C1481BV33-133BGXI) corresponds specifically to the 119-ball BGA variant with industrial temperature range (–40°C to +85°C) and exposed pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102436BLL-133TQLI and MT55LSD256H36AG-133:G, the CY7C1481BV33-133BGXI uniquely balances 72-Mbit density, Pentium-compatible burst flexibility, and simple single-ended interface - making it optimal for legacy-compatible, timing-deterministic cache upgrades without redesigning clocking or bus topology.

Availability

CY7C1481BV33-133BGXI is available at Aetrix Electronics and suitable for industrial motion controllers, avionics data recorders, network line cards, and Pentium-class embedded computing systems requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1481BV33-133BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio.

This device belongs to the CY7C14xxBV33 synchronous SRAM product line, designed specifically for high-performance, low-latency cache and buffer applications in microprocessor-based systems requiring deterministic burst timing and JEDEC-standard packaging.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address sequence: HIGH enables Intel Pentium®-compatible interleaved burst (e.g., 0,2,4,6,1,3,5,7), LOW enables linear burst (e.g., 0,1,2,3,4,5,6,7). It is a static strap pin with internal pull-up; must be hard-wired to VDD or GND before operation and cannot change dynamically during burst cycles.

Does CY7C1481BV33-133BGXI support both 2.5 V and 3.3 V I/O interfaces simultaneously?

No - VDDQ is a single supply pin that must be set to either 2.5 V or 3.3 V, not both. All 36 DQ and 4 DQP lines share this one I/O voltage rail. The selection determines compatibility with the host processor's I/O voltage standard and affects AC timing parameters like setup/hold margins.

Is JTAG boundary scan available on the TQFP package of this SRAM?

No - JTAG pins (TCK, TMS, TDI, TDO) are present only on the 119-ball BGA package (BGX), not on the 100-pin TQFP variant. The datasheet explicitly states "TDO … not available on TQFP packages" and lists JTAG functionality as BGA-exclusive in the pin definitions table.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH terminates all active operations and places the device in low-power sleep with data retention. Any in-progress burst is aborted; subsequent accesses require reinitialization via ADSP/ADSC. The 150 mA max CMOS standby current applies only after stabilization in sleep - wake-up latency is not specified but occurs within one CLK cycle after ZZ returns LOW.